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F D M S 8 6 October 2014 8 FDMS8680 0 N N-Channel PowerTrench® MOSFET(cid:3) tm -C h 30V, 35A, 7.0m(cid:58) a n Features General Description n e l (cid:132) Max rDS(on) = 7.0m(cid:58)(cid:3)at VGS = 10V, ID = 14A The FDMS8680 has been designed to minimize losses in power P conversion application. Advancements in both silicon and o (cid:132) Max rDS(on) = 11.0m(cid:58) at VGS = 4.5V, ID = 11.5A package technologies have been combined to offer the lowest w e (cid:132) Advanced Package and Silicon combination for rDS(on) while maintaining excellent switching performance. r low r and high efficiency T DS(on) Applications r e (cid:132) MSL1 robust package design (cid:132) Low Side for Synchronous Buck to Power Core Processor n c (cid:132) RoHS Compliant (cid:132) Secondary Side Synchronous Rectifier h® (cid:132) Low Side Switch in POL DC/DC Converter M O (cid:132) Oring FET/ Load Switch S F E T Top Bottom Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D 8 1 S D D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 35 C -Continuous (Silicon limited) T = 25°C 63 I C A D -Continuous T = 25°C (Note 1a) 14 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 216 mJ AS Power Dissipation T = 25°C 50 P C W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.5 (cid:84)JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 (cid:84)JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8680 FDMS8680 Power 56 13" 12mm 3000units ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS8680 Rev.C3

F D Electrical Characteristics M T = 25°C unless otherwise noted J S Symbol Parameter Test Conditions Min Typ Max Units 8 6 8 Off Characteristics 0 N BVDSS Drain to Source Breakdown Voltage ID = 250(cid:80)A, VGS = 0V 30 V - (cid:39)(cid:3)(cid:3)(cid:3)B(cid:39)VTDJSS BCroeeaffkicdioewntn Voltage Temperature ID = 250(cid:80)A, referenced to 25°C 24 mV/°C Cha IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS= 0V 1 (cid:80)A nn IGSS Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA e l P On Characteristics o w VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250(cid:80)A 1.0 1.8 3.0 V e (cid:3)(cid:3)(cid:39)(cid:3)(cid:3)(cid:39)VTGJS(th) GTeamtep teor aStuoruer cCeo Tehffriceisehnotld Voltage ID = 250(cid:80)A, referenced to 25°C -5.7 mV/°C rTr e VGS = 10V, ID = 14A 5.5 7.0 n c rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 11.5A 8.5 11.0 m(cid:58) h V = 10V, I = 14A, T = 125°C 8.2 10.5 ® GS D J M g Forward Transconductance V = 10V, I = 14A 72 S FS DD D O Dynamic Characteristics S F C Input Capacitance 1195 1590 pF E iss V = 15V, V = 0V, T C Output Capacitance DS GS 555 740 pF oss f = 1MHz C Reverse Transfer Capacitance 95 145 pF rss Rg Gate Resistance f = 1MHz 0.8 4.0 (cid:58) Switching Characteristics t Turn-On Delay Time 9 18 ns d(on) V = 15V, I = 14A, t Rise Time DD D 3 10 ns tr Turn-Off Delay Time VGS = 10V, RGEN = 6(cid:58) 21 34 ns d(off) t Fall Time 2 10 ns f Q Total Gate Charge V = 0V to 10V 18 26 nC g GS V = 15V, Q Total Gate Charge V = 0V to 5V DD 10 14 nC g GS I = 14A Q Gate to Source Charge D 3.2 nC gs Q Gate to Drain “Miller” Charge 2.7 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0V, I = 14A (Note 2) 0.8 1.2 V SD GS S t Reverse Recovery Time 27 44 ns Qrr Reverse Recovery Charge IF = 14A, di/dt = 100A/(cid:80)s 15 27 nC rr NOTES: 1. R(cid:84)JA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R(cid:84)JC isguaranteed by design while R(cid:84)CA is determined by the user's board design. a.50°C/W when mounted on a b. 125°C/W when mounted on a 1in2pad of 2 oz copper. minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300(cid:80)s, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V. ©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMS8680 Rev.C3

F D Typical Characteristics M T = 25°C unless otherwise noted J S 8 6 100 4.0 8 V = 4V NCE 3.5 VGS =3V PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80A(cid:80)Xs 0 N AIN CURRENT (A) 468000 VVGGSS == 41.05VV VGGSS = 3.5V NORMALIZEDOURCE ON-RESISTA 223...050 VGS =3.5V VGS = 4V -Channel P ,IDRD 20 VGS = 3V N TO S 11..05 VGS =4.5V owe PULSE DURATION = 80(cid:80)s AI r 0 DUTY CYCLE = 0.5%MAX DR 0.5 VGS =10V Tr 0 1 2 3 4 0 20 40 60 80 100 e n VDS,DRAIN TO SOURCE VOLTAGE (V) ID,DRAIN CURRENT(A) c h Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance ® vs Drain Current and Gate Voltage M O S 1.8 24 F STANCE 1.6 V IDG S= =1 41A0V )m(cid:58) 20 ID= 14A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80A(cid:80)Xs ET ESI 1.4 (E MALIZEDCE ON-R 1.2 RAIN TO SISTANC 16 NORN TO SOUR 01..80 r, DDS(on)RCE ON-RE 128 TJ= 125oC RAI OU TJ= 25oC D 0.6 S 4 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ,JUNCTION TEMPERATURE (oC) VGS,GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 100 100 PULSE DURATION = 80(cid:80)s A) VGS = 0V DUTY CYCLE = 0.5%MAX T ( 80 N 10 A) VDD = 5V RE T ( UR RREN 60 AIN C 1 TJ = 25oC N CU 40 E DR 0.1 TJ= 150oC RAI TJ= 150oC ERS D V I, D 20 TJ = 25oC TJ = -55oC I, RES0.01 TJ = -55oC 0 0.001 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMS8680 Rev.C3

F D Typical Characteristics M T = 25°C unless otherwise noted J S 8 6 10 2000 8 V) ID= 14A Ciss 0 E( N G 8 1000 A - CE VOLT 6 VDD = 10V VDD = 15V CE (pF) Coss Chan UR VDD = 20V AN n O T e S 4 CI l E TO CAPA Po GAT 2 100 f = 1MHz Crss we V, GS 0 50 VGS = 0V rTr 0 4 8 12 16 20 0.1 1 10 30 e n Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V) c h Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain ® to Source Voltage M O S 20 70 F E NCHE CURRENT(A) 10 TJ= 25oC AIN CURRENT (A) 34560000 VGS= 10V T VALA TJ= 125oC ,DRD20 Limited by Package VGS= 4.5V A I , S 10 IA R(cid:84)JC = 2.5oC/W 1 0 0.01 0.1 1 10 100 300 25 50 75 100 125 150 tAV, TIME IN AVALANCHE(ms) TC,CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 200 2000 100 100us R (W)1000 VGS = 10V SRING=L E1 2P5UoCL/SWE T (A) 10 OWE TA(cid:84)J=A 25oC AIN CURREN 1 TLIHMISIT AERDE BAY I SrD S(on) 11100m0msmss RANSIENT P 10100 DR SINGLE PULSE 1s K T I, D 0.1 TRJ= M= A1X25 RoCA/TWED 10s PEA 0.01 TA(cid:84)J=A 25oC DC ,P()PK 0.15 0.01 0.1 1 10 100 10-4 10-3 10-2 10-1 100 101 102 103 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMS8680 Rev.C3

F D Typical Characteristics M T = 25°C unless otherwise noted J S 8 6 2 8 1 DUTY CYCLE-DESCENDING ORDER 0 N D = 0.5 - MAL A 0.1 00..21 Ch RMALIZED THERIMPEDANCE,ZJ(cid:84) 0.01 000...000521 PDM t1 annel Pow NO 0.001 SINGLE PULSE t2 e R = 125oC/W NOTES: r (cid:84)JA DUTY FACTOR: D = t1/t2 T PEAK TJ = PDM x Z(cid:84)JA x R(cid:84)JA + TA re 0.0001 n 10-4 10-3 10-2 10-1 100 101 102 103 c h t, RECTANGULAR PULSE DURATION (s) ® Figure 13. Transient Thermal Response Curve M O S F E T ©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDMS8680 Rev.C3

PQFN85X6,1.27P CASE483AE ISSUEA 5.10 A 5.10 3.91 PKG SEE CL B DETAILB 1.27 8 5 8 7 6 5 0.77 4.52 3.75 PKGCL 6.15 5.85 6.61 5.65 KEEPOUT AREA 1.27 1 4 1 2 3 4 TOPVIEW 1.27 0.61 3.81 LANDPATTERN OPTIONALDRAFT RECOMMENDATION ANGLEMAYAPPEAR SEE ONFOURSIDES 5.00 4.80 DETAILC OFTHEPACKAGE 0.35 0.15 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 0.10 C 0.30 0.05 0.05 SIDEVIEW 0.00 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 8X 0.08 C 0.35 C 5.20 0.15 4.80 1.10 SEATING 0.90 PLANE DETAILC DETAILB 3.81 SCALE:2:1 SCALE:2:1 1.27 0.51 (8X) 0.31 (0.34) NOTES:UNLESSOTHERWISESPECIFIED 0.10 C A B A.PACKAGESTANDARDREFERENCE:JEDECMO-240, 1 2 3 4 ISSUEA,VAR.AA,. B.DIMENSIONSDONOTINCLUDEBURRSORMOLDFLASH. 0.76 MOLDFLASHORBURRSDOESNOTEXCEED0.10MM. 0.51 (0.52) C.ALLDIMENSIONSAREINMILLIMETERS. 6.25 D.DIMENSIONINGANDTOLERANCINGPERASMEY14.5M-2009. 5.90 E.ITISRECOMMENDEDTOHAVENOTRACESOR VIASWITHINTHEKEEPOUTAREA. (0.50) 3.48+0.30 -0.10 (0.30) (2X) 8 7 6 5 +0.10 (cid:19)(cid:17)(cid:23)(cid:23)(cid:147)(cid:19)(cid:17)(cid:20)(cid:19) 0.20 (8X) 3.96 -0.15 3.61 BOTTOMVIEW

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