Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D M S 8 6 May 2015 5 FDMS86540 4 0 N ® N-Channel PowerTrench MOSFET - C 60 V, 129 A, 3.4 mΩ h a n Features General Description n e (cid:132) Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to l P improve the overall efficiency and to minimize switch node (cid:132) Max r = 4.1 mΩ at V = 8 V, I = 18.5 A o DS(on) GS D ringing of DC/DC converters using either synchronous or w (cid:132) Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers.It has been optimized e and high efficiency for low gate charge, low rDS(on), fast switching speed and body rT diode reverse recovery performance. r (cid:132) Next generation enhanced body diode technology, e n engineered for soft recovery Applications c h (cid:132) MSL1 robust package design ® (cid:132) Primary Switch in isolated DC-DC (cid:132) 100% UIL tested M (cid:132) Synchronous Rectifier O (cid:132) RoHS Compliant S (cid:132) Load Switch F E T Top Bottom Pin 1 S D S S S G S D S D D D G D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25 °C (Note 5) 129 C -Continuous T = 100 °C (Note 5) 82 I C A D -Continuous T = 25 °C (Note 1a) 20 A -Pulsed (Note 4) 642 E Single Pulse Avalanche Energy (Note 3) 228 mJ AS Power Dissipation T = 25 °C 96 P C W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.3 θJC °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86540 FDMS86540 Power 56 13 ’’ 12 mm 3000 units ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86540 Rev. 1.4

F D Electrical Characteristics T = 25 °C unless otherwise noted. M J S Symbol Parameter Test Conditions Min. Typ. Max. Units 8 6 Off Characteristics 5 4 0 BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 V N Δ BΔVTDSS BCroeeaffkicdioewntn Voltage Temperature ID = 250 μA, referenced to 25 °C 28 mV/°C -C J h IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA a n IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA n e On Characteristics l P V Gate to Source Threshold Voltage V = V , I = 250 μA 2 3.2 4 V o GS(th) GS DS D w ΔVGS(th) Gate to Source Threshold Voltage I = 250 μA, referenced to 25 °C -11 mV/°C e ΔT Temperature Coefficient D r J T V = 10 V, I = 20 A 2.7 3.4 r GS D e r Static Drain to Source On Resistance V = 8 V, I = 18.5 A 3.1 4.1 mΩ n DS(on) GS D c V = 10 V, I = 20 A, T = 125 °C 3.8 4.8 h GS D J ® g Forward Transconductance V = 10 V, I = 20 A 73 S FS DS D M Dynamic Characteristics O S Ciss Input Capacitance 4837 6435 pF F C Output Capacitance VDS = 30 V, VGS = 0 V, 1413 1880 pF E oss f = 1 MHz T C Reverse Transfer Capacitance 50 90 pF rss R Gate Resistance 1.0 Ω g Switching Characteristics t Turn-On Delay Time 28 45 ns d(on) tr Rise Time VDD = 30 V, ID = 20 A, 16 29 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 32 52 ns t Fall Time 7.2 15 ns f Q Total Gate Charge V = 0 V to 10 V 65 90 nC g GS Qg Total Gate Charge VGS = 0 V to 8 V VDD = 30 V, 53 75 nC Qgs Gate to Source Charge ID = 20 A 23 nC Q Gate to Drain “Miller” Charge 12 nC gd Drain-Source Diode Characteristics V = 0 V, I = 2.1 A (Note 2) 0.70 1.2 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 20 A (Note 2) 0.79 1.3 GS S t Reverse Recovery Time 55 88 ns rr I = 20 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 41 66 nC rr t Reverse Recovery Time 44 70 ns rr I = 20 A, di/dt = 300 A/μs Q Reverse Recovery Charge F 76 122 nC rr Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design. a)50 °C/W when mounted on a b) 125 °C/W when mounted on a 1 in2 pad of 2 oz copper minimum pad of 2 oz copper. GDDSS GDDSS FSFS FSFS 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 39 A, VDD = 54 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 57 A. 4. Pulse Id please refer to SOA curve for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. ©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMS86540 Rev. 1.4

F D M Typical Characteristics TJ = 25 °C unless otherwise noted. S 8 6 350 5 5 RENT (A) 280 VGSV G=S 8V = GV 9S V= 10 V VGS = 7 V DRESISTANCE 4 VGS = 6 V VGS = 7 V 40 N-Ch , DRAIN CURD124100 VGS = 6 V NORMALIZEO SOURCE ON- 23 VGS = 8 V annel Po I 70 T 1 w PULSE DURATION = 80 μs AIN PULSE DURATION = 80 μs VGS = 9 V VGS = 10 V e DUTY CYCLE = 0.5% MAX R DUTY CYCLE = 0.5% MAX r D T 0 0 0 1 2 3 4 5 0 70 140 210 280 350 re VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURR ENT (A) nc h Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance ® vs. Drain Current and Gate Voltage M O 1.7 15 S NCE 1.6 ID = 20 A )Ω ID = 20 A PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs FE STA 1.5 VGS = 10 V (E m 12 T ALIZEDE ON-RESI 111...234 DRAIN TO ESISTANC 9 NORM AIN TO SOURC 0011....8901 r,DS(on)SOURCE ON-R 36 TJ = 25 oCTJ = 125 oC R D 0.7 0 -75 -50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs. Gate to vs. Junction Temperature Source Voltage 350 400 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs T (A) 100 VGS = 0 V 280 N E T (A) VDS = 5 V URR 10 RREN210 AIN C 1 TJ = 150 oC CU DR TJ = 25 oC N 140 E I, DRAID 70 TJ = 150 oC TJ = T-5J 5= o2C5 oC I, REVERSS 00.0.11 TJ = -55 oC 0 0.001 2 3 4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current ©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMS86540 Rev. 1.4

F D M Typical Characteristics T = 25 °C unless otherwise noted. J S 8 6 10 10000 5 E (V) ID = 20 A VDD = 30 V Ciss 40 G 8 N A RCE VOLT 6 VDD = 20 V VDD = 40 V NCE (pF)1000 Coss -Chan SOU 4 CITA ne GATE TO 2 CAPA 100 f = 1 MHz Crss l Pow , GS VGS = 0 V er V 0 10 T 0 10 20 30 40 50 60 70 0.1 1 10 60 re Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) n c h Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain ® to Source Voltage M O 100 140 S RθJC = 1.3 oC/W F 120 E NCHE CURRENT (A) 10 TJ = 25 oC TJ = 100 oC RAIN CURRENT (A) 1068000 VGS = 8 V VGS = 10 V T A D AL , D 40 , AVS TJ = 125 oC I 20 A I 1 0 0.01 0.1 1 10 100 300 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs. Case Temperature 1000 20000 W)10000 SINGLE PULSE T (A) 100 10 μs OWER ( RTCθJ =C 2=5 1 o.C3 oC/W N P RE 10 100 μs NT 1000 I, DRAIN CURD0.00.111 TLTSTRHIJCIθMN J =I=SCGI T M 2=LAE5 AERD1 oX .E PC3B AR U Yo ALIC SrST/D WEESD(on) CMUERAVSEU RBEEDN TD ATTOA 1D10 Cm mss , PPEAK TRANSIE()PK 10100 0.1 1 10 100 200 10-5 10-4 10-3 10-2 10-1 1 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WI DTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMS86540 Rev. 1.4

F D M Typical Characteristics T = 25 °C unless otherwise noted. J S 8 2 6 DUTY CYCLE-DESCENDING ORDER 5 T 1 4 EN 0 NSI N TRACE D = 00..52 -C r(t), NORMALIZED EFFECTIVE THERMAL RESISTAN 0.00.11 S I0000N....1000G521LE PULSE ZNRDPθθOeuJJaCtTCyk(E t =C)TS =1yJ: c.=r3l(P etPo)D,C DxDMM/ W R =xθ tJZ1C θ/tJ 1tC2(tt2) + TC hannel PowerT 0.001 r 10-5 10-4 10-3 10-2 10-1 1 e n t, RECTANGULAR PULSE DURATION (sec) c h Figure 13. Junction-to-Case Transient Thermal Response Curve ® M O S F E T ©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDMS86540 Rev. 1.4

PQFN85X6,1.27P CASE483AE ISSUEA 5.10 A 5.10 3.91 PKG SEE CL B DETAILB 1.27 8 5 8 7 6 5 0.77 4.52 3.75 PKGCL 6.15 5.85 6.61 5.65 KEEPOUT AREA 1.27 1 4 1 2 3 4 TOPVIEW 1.27 0.61 3.81 LANDPATTERN OPTIONALDRAFT RECOMMENDATION ANGLEMAYAPPEAR SEE ONFOURSIDES 5.00 4.80 DETAILC OFTHEPACKAGE 0.35 0.15 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 0.10 C 0.30 0.05 0.05 SIDEVIEW 0.00 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 8X 0.08 C 0.35 C 5.20 0.15 4.80 1.10 SEATING 0.90 PLANE DETAILC DETAILB 3.81 SCALE:2:1 SCALE:2:1 1.27 0.51 (8X) 0.31 (0.34) NOTES:UNLESSOTHERWISESPECIFIED 0.10 C A B A.PACKAGESTANDARDREFERENCE:JEDECMO-240, 1 2 3 4 ISSUEA,VAR.AA,. B.DIMENSIONSDONOTINCLUDEBURRSORMOLDFLASH. 0.76 MOLDFLASHORBURRSDOESNOTEXCEED0.10MM. 0.51 (0.52) C.ALLDIMENSIONSAREINMILLIMETERS. 6.25 D.DIMENSIONINGANDTOLERANCINGPERASMEY14.5M-2009. 5.90 E.ITISRECOMMENDEDTOHAVENOTRACESOR VIASWITHINTHEKEEPOUTAREA. (0.50) 3.48+0.30 -0.10 (0.30) (2X) 8 7 6 5 +0.10 (cid:19)(cid:17)(cid:23)(cid:23)(cid:147)(cid:19)(cid:17)(cid:20)(cid:19) 0.20 (8X) 3.96 -0.15 3.61 BOTTOMVIEW

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FDMS86540