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F D M S October 2014 7 6 9 FDMS7694 4 N N-Channel PowerTrench® MOSFET -C h 30 V, 9.5 mΩ a n Features General Description n e l (cid:132) Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.2 A This N-Channel MOSFET has been designed specifically to P improve the overall efficiency and to minimize switch node o (cid:132) Max r = 14.5 mΩ at V = 4.5 V, I = 10.5 A DS(on) GS D ringing of DC/DC converters using either synchronous or w (cid:132) Advanced Package and Silicon combination for low r conventional switching PWM controllers.It has been optimized e DS(on) r and high efficiency for low gate charge, low rDS(on), fast switching speed ang body T diode reverse recovery performance. re (cid:132) Next generation enhanced body diode technology, n engineered for soft recovery Applications c h (cid:132) MSL1 robust package design ® (cid:132) IMVP Vcore Switching for Notebook M (cid:132) 100% UIL tested (cid:132) VRM Vcore Switching for Desktop and server O (cid:132) RoHS Compliant S (cid:132) OringFET / Load Switching F E (cid:132) DC-DC Conversion T Top Bottom Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D 8 1 S D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 20 C -Continuous (Silicon limited) T = 25 °C 44 I C A D -Continuous T = 25 °C (Note 1a) 13.2 A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 21 mJ AS Power Dissipation T = 25 °C 27 P C W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.5 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7694 FDMS7694 Power 56 13 ’’ 12 mm 3000 units ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS7694 Rev.C3

F D Electrical Characteristics TJ = 25 °C unless otherwise noted M S Symbol Parameter Test Conditions Min Typ Max Units 7 6 Off Characteristics 9 4 BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V N ΔBV Breakdown Voltage Temperature - DSS I = 250 μA, referenced to 25 °C 16 mV/°C C ΔTJ Coefficient D h I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 μA a DSS DS GS n I Gate to Source Leakage Current, Forward V = 20 V, V = 0 V 100 nA n GSS GS DS e l On Characteristics P o VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 2.0 3.0 V w ΔV Gate to Source Threshold Voltage e ΔTGS(th) Temperature Coefficient ID = 250 μA, referenced to 25 °C -6 mV/°C rT J r V = 10 V, I = 13.2 A 7.6 9.5 e GS D n rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 10.5 A 11.1 14.5 mΩ c h V = 10 V, I = 13.2 A, T = 125 °C 10.6 13.3 GS D J ® gFS Forward Transconductance VDS = 5 V, ID = 13.2 A 55 S M O Dynamic Characteristics S C Input Capacitance 1060 1410 pF F iss V = 15 V, V = 0 V, E Coss Output Capacitance f =D S1 MHz GS 353 470 pF T C Reverse Transfer Capacitance 36 55 pF rss R Gate Resistance 0.8 1.6 Ω g Switching Characteristics t Turn-On Delay Time 8.4 17 ns d(on) tr Rise Time VDD = 15 V, ID = 13.2 A, 2 10 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 18 33 ns t Fall Time 1.6 10 ns f Q Total Gate Charge V = 0 V to 10 V 15 22 nC g GS Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, 7 10 nC Qgs Gate to Source Charge ID = 13.2 A 3.3 nC Q Gate to Drain “Miller” Charge 2.0 nC gd Drain-Source Diode Characteristics V = 0 V, I = 2.1 A (Note 2) 0.76 1.1 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 13.2 A (Note 2) 0.85 1.2 GS S t Reverse Recovery Time 23 37 ns rr I = 13.2 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 7 14 nC rr t Reverse Recovery Time 18 33 ns rr I = 13.2 A, di/dt = 300 A/μs Q Reverse Recovery Charge F 14 26 nC rr Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a)50 °C/W when mounted on a b) 125 °C/W when mounted on a 1 in2 pad of 2 oz copper minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 20 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7694 Rev.C3 2 www.fairchildsemi.com

F D Typical Characteristics M T = 25 °C unless otherwise noted J S 7 6 9 50 5 4 VGS = 4.5 V V = 4 V NCE VGS = 3.5 V N GS A - 40 T 4 C NT (A) DRESIS VGS = 4 V ha URRE 30 VGS = 5 V ALIZEE ON- 3 nne , IDRAIN C D 1200 VGS = 10 V VGS = 3.5 V NORMN TO SOURC 12 VGS =V 4G.S5 =V 5 V l Powe PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs DRAI PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs VGS = 10 V rTr 0 0 e 0 1 2 3 4 5 0 10 20 30 40 50 n c VDS, DRAIN TO SOU RCE VOLTAGE (V) ID, DRAIN CU RRENT (A) h ® Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance M vs Drain Current and Gate Voltage O S F E 1.6 30 T NORMALIZED O SOURCE ON-RESISTANCE 111111......012345 IVDG =S 1=3 1.20 AV rDRAIN TO ,DS(on)()CE ON-RESISTANCE mΩ 122505 PDIDUU =LT SY13E C. 2DY UACRLEA T=I OT0.JN5 = %= 1 8M205A μoXsC N T UR 10 DRAI 0.9 SO TJ = 25 oC 0.8 5 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 50 100 PULSE DURATION = 80 μs A) VGS = 0 V A) 40 DUTY CYCLE = 0.5% MAX ENT ( 10 RRENT ( 30 VDS = 5 V N CURR TJ = 150 oC CU TJ = 150 oC RAI 1 AIN 20 E D TJ = 25 oC DR TJ = 25 oC RS I, D 10 REVE 0.1 TJ = -55 oC TJ = -55 oC I, S 0 0.01 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7694 Rev.C3 3 www.fairchildsemi.com

F D Typical Characteristics T = 25 °C unless otherwise noted M J S 7 6 10 2000 9 E (V) ID = 13.2 A VDD = 15 V 1000 4 N AG 8 Ciss -C T VOL VDD = 10 V VDD = 20 V pF) ha CE 6 CE ( Coss nn R N U A e O SO 4 ACIT 100 l P T P o , GATE S 2 CA fV =G S1 =M 0H Vz Crss werT G V 0 10 re 0 4 8 12 16 0.1 1 10 30 n Qg, GATE C HARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) ch ® Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain M to Source Voltage O S F E 20 50 T RENT (A) 10 TJ = 25 oC NT (A) 40 VGS = 10 V R E E CU TJ = 100 oC URR 30 VGS = 4.5 V H C C N , AVALANS TJ = 125 oC , IDRAID1200 Limited by Package IA RθJC = 4.5oC/W 1 0 0.01 0.1 1 10 100 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 100 500 W) V = 10 V SINGLE PULSE RENT (A) 10 110m0sus NT POWER ( 100 GS RTAθJ =A 2=5 1 o2C5 oC/W R E CU 1 THIS AREA IS 10 ms NSI I, DRAIN D 0.1 LIMITED BYRSTT JArIθND J ==ASG (M2=oL5n AE1) Xo 2PC 5RU oALCST/WEED 111D00 Cs 0s ms , PPEAK TRA ()PK 110 0.01 0.5 0.01 0.1 1 10 100200 10-4 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE W IDTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation FDMS7694 Rev.C3 4 www.fairchildsemi.com

F D Typical Characteristics T = 25 °C unless otherwise noted M J S 7 6 9 4 2 N 1 DUTY CYCLE-DESCENDING ORDER - C L D = 0.5 ha A 0.2 ALIZED THERM ZPEDANCE,JAθ 0.1 0000....1000521 PDM t1 nnel Pow NORMIM 0.01 SRIθNJAG =L E1 2P5U oLCS/EW NDPEOUATTYKE SFT:AJ C= TPODRM: xD Z =θ JtA1 /xt2 RθJA +t T2A erTre n c 0.001 h 10-4 10-3 10-2 10-1 1 10 100 1000 ® t, RECTANGULAR PULSE DURATION (sec) M O Figure 13. Junction-to-Ambient Transient Thermal Response Curve S F E T FDMS7694 Rev.C3 5 www.fairchildsemi.com

PQFN85X6,1.27P CASE483AE ISSUEA 5.10 A 5.10 3.91 PKG SEE CL B DETAILB 1.27 8 5 8 7 6 5 0.77 4.52 3.75 PKGCL 6.15 5.85 6.61 5.65 KEEPOUT AREA 1.27 1 4 1 2 3 4 TOPVIEW 1.27 0.61 3.81 LANDPATTERN OPTIONALDRAFT RECOMMENDATION ANGLEMAYAPPEAR SEE ONFOURSIDES 5.00 4.80 DETAILC OFTHEPACKAGE 0.35 0.15 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 0.10 C 0.30 0.05 0.05 SIDEVIEW 0.00 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 8X 0.08 C 0.35 C 5.20 0.15 4.80 1.10 SEATING 0.90 PLANE DETAILC DETAILB 3.81 SCALE:2:1 SCALE:2:1 1.27 0.51 (8X) 0.31 (0.34) NOTES:UNLESSOTHERWISESPECIFIED 0.10 C A B A.PACKAGESTANDARDREFERENCE:JEDECMO-240, 1 2 3 4 ISSUEA,VAR.AA,. B.DIMENSIONSDONOTINCLUDEBURRSORMOLDFLASH. 0.76 MOLDFLASHORBURRSDOESNOTEXCEED0.10MM. 0.51 (0.52) C.ALLDIMENSIONSAREINMILLIMETERS. 6.25 D.DIMENSIONINGANDTOLERANCINGPERASMEY14.5M-2009. 5.90 E.ITISRECOMMENDEDTOHAVENOTRACESOR VIASWITHINTHEKEEPOUTAREA. (0.50) 3.48+0.30 -0.10 (0.30) (2X) 8 7 6 5 +0.10 (cid:19)(cid:17)(cid:23)(cid:23)(cid:147)(cid:19)(cid:17)(cid:20)(cid:19) 0.20 (8X) 3.96 -0.15 3.61 BOTTOMVIEW

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