Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D M S 7 October 2014 6 7 FDMS7670AS 0 A S N-Channel PowerTrench® SyncFETTM(cid:3) N 30 V, 42 A, 3 m(cid:58) -C h Features General Description a n n (cid:132) Max rDS(on) = 3.0 m(cid:58) at VGS = 10 V, ID = 21 A The FDMS7670AS has been designed to minimize losses in e power conversion application. Advancements in both silicon and l (cid:132) Max rDS(on) = 3.2 m(cid:58) at VGS = 7 V, ID = 19 A package technologies have been combined to offer the lowest P o (cid:132) Advanced Package and Silicon combination for low rDS(on) rDS(on) while maintaining excellent switching performance. This w and high efficiency device has the added benefit of an efficient monolithic Schottky e body diode. r T (cid:132) SyncFET Schottky Body Diode r Applications e (cid:132) MSL1 robust package design n c (cid:132) 100% UIL tested (cid:132) Synchronous Rectifier for DC/DC Converters h ® (cid:132) RoHS Compliant (cid:132) Notebook Vcore/ GPU low side switch S (cid:132) Networking Point of Load low side switch y n c (cid:132) Telecom secondary side rectification F E T T M Top Bottom Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D 8 1 S D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 42 C -Continuous (Silicon limited) T = 25 °C 113 I C A D -Continuous T = 25 °C (Note 1a) 22 A -Pulsed 150 dv/dt MOSFET dv/dt 1.8 V/ns E Single Pulse Avalanche Energy (Note 3) 98 mJ AS Power Dissipation T = 25 °C 65 P C W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.9 (cid:84)JC °C/W R(cid:84)JA Thermal Resistance, Junction to Ambient (cid:3)(cid:3)(cid:3) (Note 1a) 50 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7670AS FDMS7670AS Power 56 13 ’’ 12 mm 3000 units ©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS7670AS Rev.C2

F D Electrical Characteristics TA = 25 °C unless otherwise noted M S Symbol Parameter Test Conditions Min Typ Max Units 7 6 Off Characteristics 7 0 BV Drain to Source Breakdown Voltage I = 1 mA, V = 0 V 30 V A DSS D GS S (cid:39)(cid:3)(cid:3)(cid:3)B(cid:39)VTDJSS BCroeeaffkicdioewntn Voltage Temperature ID = 10 mA, referenced to 25 °C 14 mV/°C N- IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 (cid:80)A Ch IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA a n n On Characteristics(Note 2) e l VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V P (cid:3)(cid:39)VGS(th) Gate to Source Threshold Voltage I = 10 mA, referenced to 25 °C -5 mV/°C ow (cid:3)(cid:3)(cid:3)(cid:39)TJ Temperature Coefficient D e V = 10 V, I = 21 A 2.4 3.0 r GS D T V = 7 V, I = 19 A 2.5 3.2 r rDS(on) Static(cid:3)Drain to Source On Resistance VGS = 4.5 V,D I = 17 A 3.0 3.5 m(cid:58) en GS D c VGS = 10 V, ID = 21 A, TJ= 125 °C 3.0 3.8 h ® g Forward Transconductance V = 5 V, I = 21 A 300 S FS DS D S Dynamic Characteristics y n c Ciss Input Capacitance 3175 4225 pF F V = 15 V, V = 0 V, C Output Capacitance DS GS 1175 1565 pF E oss f = 1 MHz T Crss Reverse Transfer Capacitance 110 165 pF T M Rg Gate Resistance 1.3 2.6 (cid:58) Switching Characteristics t Turn-On Delay Time 14 25 ns d(on) tr Rise Time VDD = 15 V, ID = 21 A, 6 12 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 (cid:58) 35 56 ns t Fall Time 5 10 ns f Q Total Gate Charge V = 0 V to 10 V 47 66 nC g GS Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, 22 31 nC Qgs Gate to Source Gate Charge ID = 21 A 8.5 nC Q Gate to Drain “Miller” Charge 4.9 nC gd Drain-Source Diode Characteristics V = 0 V, I = 2 A (Note 2) 0.43 0.7 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 21 A (Note 2) 0.75 1.2 GS S t Reverse Recovery Time 35 56 ns Qrr Reverse Recovery Charge IF = 21 A, di/dt = 300 A/(cid:80)s 41 67 nC rr Notes: 1. R(cid:84)JA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R(cid:84)JC isguaranteed by design while R(cid:84)CA is determined by the user's board design. a. 50 °C/W when mounted on a b. 125 °C/W when mounted on a 1 in2pad of 2 oz copper. minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300(cid:80)s, Duty cycle < 2.0%. 3. EAS of 98 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 21 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7670AS Rev.C2 2 www.fairchildsemi.com

F D Typical Characteristics M T = 25 °C unless otherwise noted J S 7 6 150 3.5 7 E 0 120 VGS = 3.5 V TANC 3.0 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A (cid:80)Xs AS AIN CURRENT (A) 6900 VVVGGGSSS === 414 0.V5 V V VGS = 3 V NORMALIZEDOURCE ON-RESIS 122...505 VGS = 3 V VGS = 3.5 V VGS=4 V N-Channe ,IDRD 30 N TO S 1.0 VGS = 4.5 V l Po PULSE DURATION = 80 (cid:80)s AI V =10 V w DUTY CYCLE = 0.5% MAX R GS 0 D 0.5 e 0.0 0.5 1.0 1.5 2.0 0 30 60 90 120 150 rT VDS,DRAIN TO SOURCE VOLTAGE (V) ID,DRAIN CURRENT (A) re n Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance c h vs Drain Current and Gate Voltage ® S 1.6 10 y TANCE 11..45 IVDG =S 2=1 1 A0 V ()m(cid:58) 8 ID= 21 A PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A (cid:80)Xs ncFE NORMALIZEDTO SOURCE ON-RESIS 01111.....90123 rDRAIN TO ,DS(on)RCE ON-RESISTANCE 246 TJ= 125 oC TTM AIN 0.8 SOU TJ= 25 oC R D 0.7 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ,JUNCTION TEMPERATURE (oC) VGS,GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 150 200 PULSE DURATION = 80(cid:3)(cid:80)s A) 100 VGS = 0 V DUTY CYCLE = 0.5% MAX T ( 120 N RRENT (A) 90 VDS = 5 V AIN CURRE 101 TJ= 125 oC N CU 60 TJ= 125 oC E DR 0.1 TJ = 25 oC RAI TJ = 25 oC ERS D V I, D 30 TJ = -55 oC I, RES0.01 TJ = -55 oC 0 0.001 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7670AS Rev.C2 3 www.fairchildsemi.com

F D Typical Characteristics M T = 25 °C unless otherwise noted J S 7 6 10 5000 7 E (V) ID= 21 A Ciss 0A G 8 S TO SOURCE VOLTA 46 VDD = 10 V VDD = 15V VDD = 20 V APACITANCE (pF)1000 Coss N-Channe ATE 2 C Crss l P , GGS 100 fV =G S1 =M 0H Vz ow V 0 60 e 0 10 20 30 40 50 0.1 1 10 30 r T Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) r e n Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain c to Source Voltage h ® S 40 120 y n c ENT (A) TJ= 25 oC NT (A) 90 VGS= 10 V FET R 10 E T E CUR TJ= 100 oC CURR 60 VGS= 4.5 V M H N NC AI A R L D AVA TJ= 125 oC ,ID 30 , S Limited by Package R(cid:84)JC= 1.9 oC/W A I 1 0 0.01 0.1 1 10 100 300 25 50 75 100 125 150 tAV, TIME IN AVALANCHE (ms) TC,CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 200 10000 100 100 (cid:80)s V = 10 V W) GS R ( A) E1000 T ( 10 1 ms OW AIN CURREN 1 TLIHMISIT AERDE BAY I SrD S(on) 11000 m mss RANSIENT P 100 DR SINGLE PULSE 1 s K T 10 I, D 0.1 TRJ= M= A1X2 5R oACT/WED 10 s PEA SRING=L E1 2P5U oLCS/WE 0.01 TA(cid:84)J=A 25 oC DC ,P()PK 0.15 TA(cid:84)J=A 25 oC 0.01 0.1 1 10 100200 10-4 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation FDMS7670AS Rev.C2 4 www.fairchildsemi.com

F D Typical Characteristics M T = 25 °C unless otherwise noted J S 7 6 2 7 1 DUTY CYCLE-DESCENDING ORDER 0 A D = 0.5 S MAL A 0.1 00..21 N- ERZJ(cid:84) 0.05 C ALIZED THPEDANCE, 0.01 00..0021 PDM t1 hanne RMIM t2 l P NO 0.001 NOTES: o SINGLE PULSE DUTY FACTOR: D = t1/t2 w R = 125 oC/W PEAK TJ = PDM x Z(cid:84)JA x R(cid:84)JA + TA e (cid:84)JA r 0.0001 T 10-4 10-3 10-2 10-1 1 10 100 1000 re t, RECTANGULAR PULSE DURATION (sec) n c h Figure 13. Junction-to-Ambient Transient Thermal Response Curve ® S y n c F E T T M FDMS7670AS Rev.C2 5 www.fairchildsemi.com

F D Typical Characteristics (continued) M S 7 6 7 SyncFET Schottky body diode 0 A Characteristics S Schottky barrier diodes exhibit significant leakage at high tem- N Fairchild’s SyncFET process embeds a Schottky diode in parallel perature and high reverse voltage. This will increase the power - C with PowerTrench MoSFET. This diode exhibits similar in the device. h characteristics to a discrete external Schottky diode in parallel a n with a MOSFET. Figure 14 shows the reverses recovery n characteristic of the FDMS7670AS. e l P o 25 10-2 w A) TJ= 125 oC e 20 RRENT (10-3 TJ= 100 oC rTre 15 U n T (A) di/dt = 300 A/(cid:80)s GE C ch EN 10 KA10-4 ® RR EA S CU 5 RSE L10-5 TJ= 25 oC ync E 0 V F RE E -5 , DSS10-6 TT 0 30 60 90 120 150 I 0 5 10 15 20 25 30 M TIME (ns) V , REVERSE VOLTAGE (V) DS Figure 14. FDMS7670AS SyncFET body Figure 15. SyncFET body diode reverses diode reverse recovery characteristic leakage versus drain-source voltage FDMS7670AS Rev.C2 6 www.fairchildsemi.com

PQFN85X6,1.27P CASE483AE ISSUEA 5.10 A 5.10 3.91 PKG SEE CL B DETAILB 1.27 8 5 8 7 6 5 0.77 4.52 3.75 PKGCL 6.15 5.85 6.61 5.65 KEEPOUT AREA 1.27 1 4 1 2 3 4 TOPVIEW 1.27 0.61 3.81 LANDPATTERN OPTIONALDRAFT RECOMMENDATION ANGLEMAYAPPEAR SEE ONFOURSIDES 5.00 4.80 DETAILC OFTHEPACKAGE 0.35 0.15 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 0.10 C 0.30 0.05 0.05 SIDEVIEW 0.00 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 8X 0.08 C 0.35 C 5.20 0.15 4.80 1.10 SEATING 0.90 PLANE DETAILC DETAILB 3.81 SCALE:2:1 SCALE:2:1 1.27 0.51 (8X) 0.31 (0.34) NOTES:UNLESSOTHERWISESPECIFIED 0.10 C A B A.PACKAGESTANDARDREFERENCE:JEDECMO-240, 1 2 3 4 ISSUEA,VAR.AA,. B.DIMENSIONSDONOTINCLUDEBURRSORMOLDFLASH. 0.76 MOLDFLASHORBURRSDOESNOTEXCEED0.10MM. 0.51 (0.52) C.ALLDIMENSIONSAREINMILLIMETERS. 6.25 D.DIMENSIONINGANDTOLERANCINGPERASMEY14.5M-2009. 5.90 E.ITISRECOMMENDEDTOHAVENOTRACESOR VIASWITHINTHEKEEPOUTAREA. (0.50) 3.48+0.30 -0.10 (0.30) (2X) 8 7 6 5 +0.10 (cid:19)(cid:17)(cid:23)(cid:23)(cid:147)(cid:19)(cid:17)(cid:20)(cid:19) 0.20 (8X) 3.96 -0.15 3.61 BOTTOMVIEW

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FDMS7670AS