Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D M S 7 October 2014 5 5 FDMS7558S 8 S ® TM N N-Channel PowerTrench SyncFET - C 25 V, 49 A, 1.25 mΩ h a Features General Description n n (cid:132) Max r = 1.25 mΩ at V = 10 V, I = 32 A The FDMS7558S has been designed to minimize losses in e DS(on) GS D l power conversion application. Advancements in both silicon and P (cid:132) Max rDS(on) = 1.75 mΩ at VGS = 4.5 V, ID = 28 A package technologies have been combined to offer the lowest o r while maintaining excellent switching performance. This w (cid:132) Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky e and high efficiency r body diode. T (cid:132) SyncFET Schottky Body Diode re Applications n (cid:132) MSL1 robust package design c (cid:132) Synchronous Rectifier for Synchronous Buck Converters h (cid:132) 100% UIL tested ® (cid:132) Notebook S (cid:132) RoHS Compliant y (cid:132) Server n c (cid:132) Telecom F (cid:132) High Efficiency DC-DC Switch Mode Power Supplies E T Top Bottom Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D 8 1 S D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 49 C -Continuous (Silicon limited) T = 25 °C 199 I C A D -Continuous T = 25 °C (Note 1a) 32 A -Pulsed 180 E Single Pulse Avalanche Energy (Note 3) 288 mJ AS Power Dissipation T = 25 °C 89 P C W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.4 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7558S FDMS7558S Power 56 13 ’’ 12 mm 3000 units ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS7558S Rev.C3

F D Electrical Characteristics T = 25 °C unless otherwise noted M J S Symbol Parameter Test Conditions Min Typ Max Units 7 5 Off Characteristics 5 8 S BV Drain to Source Breakdown Voltage I = 1 mA, V = 0 V 25 V DSS D GS N ΔBV Breakdown Voltage Temperature ΔTDSS Coefficient ID = 10 mA, referenced to 25 °C 21 mV/°C -C J h IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA a n I Gate to Source Leakage Current, Forward V = 20 V, V = 0 V 100 nA GSS GS DS n e On Characteristics (Note 2) l P V Gate to Source Threshold Voltage V = V , I = 1 mA 1.2 1.6 3.0 V o GS(th) GS DS D w ΔV Gate to Source Threshold Voltage GS(th) I = 10 mA, referenced to 25 °C -5 mV/°C e ΔT Temperature Coefficient D r J T V = 10 V, I = 32 A 1.0 1.25 r GS D e r Static Drain to Source On Resistance V = 4.5 V, I = 28 A 1.4 1.75 mΩ n DS(on) GS D c VGS = 10 V, ID = 32 A, TJ = 125 °C 1.4 1.8 h ® g Forward Transconductance V = 5 V, I = 32 A 221 S FS DS D S Dynamic Characteristics y n C Input Capacitance 5843 7770 pF c iss C Output Capacitance VDS = 13 V, VGS = 0 V, 1615 2150 pF F oss f = 1 MHz E Crss Reverse Transfer Capacitance 317 475 pF T R Gate Resistance 0.5 1.0 Ω g Switching Characteristics t Turn-On Delay Time 18 33 ns d(on) tr Rise Time VDD = 13 V, ID = 32 A, 9 18 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 44 70 ns t Fall Time 5 10 ns f Q Total Gate Charge V = 0 V to 10 V 85 119 nC g GS Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 13 V, 39 55 nC Qgs Gate to Source Gate Charge ID = 32 A 16.5 nC Q Gate to Drain “Miller” Charge 9.7 nC gd Drain-Source Diode Characteristics V = 0 V, I = 2 A (Note 2) 0.38 0.7 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 32 A (Note 2) 0.75 1.2 GS S t Reverse Recovery Time 39 63 ns rr I = 32 A, di/dt = 300 A/μs Q Reverse Recovery Charge F 52 84 nC rr Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a b. 125 °C/W when mounted on a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 288 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 24 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 35 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7558S Rev.C3 2 www.fairchildsemi.com

F D Typical Characteristics M T = 25 °C unless otherwise noted J S 7 5 180 20 5 T (A) 112500 VGVSG =S =4 . 51 0V V PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs ESISTANCE 16 VGS = 2.5 VVGS = 3 V PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs 8S N-C I, DRAIN CURREND 369000 VGS = 3.5 V VVGGSS == 32 .V5 V NORMALIZEDAIN TO SOURCE ON-R 1482 VGS = 3.5 V VGS = 4.5 V VGS = 10 V hannel Powe R 0 D 0 rT 0 1 2 3 4 5 0 30 60 90 120 150 180 r e VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CURR ENT (A) n c Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance h ® vs Drain Current and Gate Voltage S y 1.5 5 n ANCE 1.4 VIDG =S 3=2 1 A0 V )mΩ 4 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs cFE ALIZEDE ON-RESIST 111...123 DRAIN TO (ESISTANCE 3 ID = 32 A T NORM AIN TO SOURC 001...890 r,DS(on)SOURCE ON-R 12 TTJ J= = 1 2255 ooCC R D 0.7 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 180 200 150 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs T (A) 100 VGS = 0 V N E T (A)120 VDS = 5 V URR 10 TJ = 125 oC N C E N URR 90 RAI 1 TJ = 25 oC RAIN C 60 TJ = 125 oC ERSE D TJ = -55 oC I, DD 30 TJ = 25 oC , REVS 0.1 TJ = -55 oC I 0 0.01 1.5 2.0 2.5 3.0 3.5 0.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7558S Rev.C3 3 www.fairchildsemi.com

F D Typical Characteristics M T = 25 °C unless otherwise noted J S 7 5 10 8000 5 GE (V) 8 ID = 32 A Ciss 8S A N OLT VDD = 13 V pF) -C O SOURCE V 46 VDD = 10 V VDD = 16 V PACITANCE (1000 Coss hannel E T CA P T 2 o A G f = 1 MHz w V, GS 0 200 VGS = 0 V Crss erT 0 15 30 45 60 75 90 0.1 1 10 30 r Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) en c Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain h to Source Voltage ® S y n 40 200 c F ENT (A) TJ = 25 oC NT (A) 150 VGS = 10 V ET RR 10 RE HE CU TJ = 100 oC N CUR 100 VGS = 4.5 V VALANC TJ = 125 oC , IDRAID 50 A , AS Limited by Package RθJC = 1.4 oC/W I 1 0 0.01 0.1 1 10 100 1000 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 1000 100 R (W) SRIθNJAG =L E1 2P5U oLCS/WE NT (A) 10 1 ms POWE 100 TA = 25 oC RAIN CURRE 1 TLHIMISIT AERDE BAY I SrSD ISN(GonL)E PULSE 11100s 0m mss TRANSIENT 10 I, DD 0.1 RTTJAθ J ==A M2=5 A1 Xo2C5 R oACT/WED 1D0Cs , PEAK )PK 1 0.01 P( 0.5 0.01 0.1 1 10 100 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WIDT H (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation FDMS7558S Rev.C3 4 www.fairchildsemi.com

F D Typical Characteristics M T = 25 °C unless otherwise noted J S 7 5 2 5 DUTY CYCLE-DESCENDING ORDER 8 1 S N AL -C RMALIZED THERM IMPEDANCE,ZJAθ 00.0.11 D = 000000......210005521 PDM t1t2 hannel Po NO SRIθNJAG =L E1 2P5U oLCS/WE NDPEOUATTYKE SFT:AJ C= TPODRM: xD Z =θ JtA1 /xt2 RθJA + TA wer T 0.001 re 10-3 10-2 10-1 1 10 100 1000 n c t, RECTANGULAR PULSE DURATION (sec) h ® Figure 13. Junction-to-Ambient Transient Thermal Response Curve S y n c F E T FDMS7558S Rev.C3 5 www.fairchildsemi.com

F D Typical Characteristics (continued) M S 7 5 5 SyncFET Schottky body diode 8 S Characteristics N - C Fairchild’s SyncFET process embeds a Schottky diode in parallel Schottky barrier diodes exhibit significant leakage at high temper- h with PowerTrench MoSFET. This diode exhibits similar a characteristics to a discrete external Schottky diode in parallel ature and high reverse voltage. This will increase the power in the n n with a MOSFET. Figure 14 shows the reverses recovery device. e characteristic of the FDMS7558S. l P o w 35 10-2 er A) T 30 NT ( TJ = 125 oC re 25 URRE10-3 TJ = 100 oC nch A) 20 C ® CURRENT ( 1105 di/dt = 300 A/μs E LEAKAGE 10-4 Sync 5 VERS10-5 TJ = 25 oC FE 0 RE T -5 , DSS10-6 0 5 10 15 20 25 I 0 5 10 15 20 25 TIME (ns) VDS, REVERSE VOLTAGE (V) Figure 14. FDMS7558S SyncFET body Figure 15. SyncFET body diode reverses diode reverse recovery characteristic leakage versus drain-source voltage FDMS7558S Rev.C3 6 www.fairchildsemi.com

PQFN85X6,1.27P CASE483AE ISSUEA 5.10 A 5.10 3.91 PKG SEE CL B DETAILB 1.27 8 5 8 7 6 5 0.77 4.52 3.75 PKGCL 6.15 5.85 6.61 5.65 KEEPOUT AREA 1.27 1 4 1 2 3 4 TOPVIEW 1.27 0.61 3.81 LANDPATTERN OPTIONALDRAFT RECOMMENDATION ANGLEMAYAPPEAR SEE ONFOURSIDES 5.00 4.80 DETAILC OFTHEPACKAGE 0.35 0.15 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 0.10 C 0.30 0.05 0.05 SIDEVIEW 0.00 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 8X 0.08 C 0.35 C 5.20 0.15 4.80 1.10 SEATING 0.90 PLANE DETAILC DETAILB 3.81 SCALE:2:1 SCALE:2:1 1.27 0.51 (8X) 0.31 (0.34) NOTES:UNLESSOTHERWISESPECIFIED 0.10 C A B A.PACKAGESTANDARDREFERENCE:JEDECMO-240, 1 2 3 4 ISSUEA,VAR.AA,. B.DIMENSIONSDONOTINCLUDEBURRSORMOLDFLASH. 0.76 MOLDFLASHORBURRSDOESNOTEXCEED0.10MM. 0.51 (0.52) C.ALLDIMENSIONSAREINMILLIMETERS. 6.25 D.DIMENSIONINGANDTOLERANCINGPERASMEY14.5M-2009. 5.90 E.ITISRECOMMENDEDTOHAVENOTRACESOR VIASWITHINTHEKEEPOUTAREA. (0.50) 3.48+0.30 -0.10 (0.30) (2X) 8 7 6 5 +0.10 (cid:19)(cid:17)(cid:23)(cid:23)(cid:147)(cid:19)(cid:17)(cid:20)(cid:19) 0.20 (8X) 3.96 -0.15 3.61 BOTTOMVIEW

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FDMS7558S