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F D M S October 2014 7 5 5 FDMS7556S 6 S ® TM N N-Channel PowerTrench SyncFET - C 25 V, 130 A, 1.2 mΩ h a Features General Description n n e (cid:132) Max r = 1.2 mΩ at V = 10 V, I = 35 A The FDMS7556S has been designed to minimize losses in l DS(on) GS D power conversion application. Advancements in both silicon and P (cid:132) Max r = 1.65 mΩ at V = 4.5 V, I = 31 A o DS(on) GS D package technologies have been combined to offer the lowest w (cid:132) Advanced Package and Silicon combination for low rDS(on) rDS(on) while maintaining excellent switching performance. This e and high efficiency device has the added benefit of an efficient monolithic Schottky r body diode. T (cid:132) SyncFET Schottky Body Diode r e Applications n (cid:132) MSL1 robust package design c h (cid:132) 100% UIL tested (cid:132) Synchronous Rectifier for Synchronous Buck Converters ® (cid:132) RoHS Compliant (cid:132) Notebook S y (cid:132) Server n c (cid:132) Telecom F E (cid:132) High Efficiency DC-DC Switch Mode Power Supplies T T M Top Bottom Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D 8 1 S D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 130 C -Continuous (Silicon limited) T = 25 °C 222 I C A D -Continuous T = 25 °C (Note 1a) 35 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 312 mJ AS Power Dissipation T = 25 °C 96 P C W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7556S FDMS7556S Power 56 13 ’’ 12 mm 3000 units ©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS7556S Rev.C4

F D Electrical Characteristics T = 25 °C unless otherwise noted M J S Symbol Parameter Test Conditions Min Typ Max Units 7 5 Off Characteristics 5 6 S BV Drain to Source Breakdown Voltage I = 1 mA, V = 0 V 25 V DSS D GS N ΔBV Breakdown Voltage Temperature DSS I = 10 mA, referenced to 25 °C 22 mV/°C - ΔT Coefficient D C J h IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA a I Gate to Source Leakage Current, Forward V = 20 V, V = 0 V 100 nA n GSS GS DS n e On Characteristics l P V Gate to Source Threshold Voltage V = V , I = 1 mA 1.2 1.6 3.0 V o GS(th) GS DS D w ΔV Gate to Source Threshold Voltage GS(th) I = 10 mA, referenced to 25 °C -5 mV/°C e ΔTJ Temperature Coefficient D r T V = 10 V, I = 35 A 0.95 1.2 GS D r e r Static Drain to Source On Resistance V = 4.5 V, I = 31 A 1.3 1.65 mΩ DS(on) GS D n V = 10 V, I = 35 A, T = 125 °C 1.2 1.6 c GS D J h gFS Forward Transconductance VDS = 5 V, ID = 35 A 212 S ® S Dynamic Characteristics y n Ciss Input Capacitance 6740 8965 pF c V = 13 V, V = 0 V, F Coss Output Capacitance f =D S1 MHz GS 1940 2580 pF E C Reverse Transfer Capacitance 314 475 pF T rss T R Gate Resistance 0.6 1.3 Ω M g Switching Characteristics t Turn-On Delay Time 20 36 ns d(on) tr Rise Time VDD = 13 V, ID = 35 A, 9 18 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 48 77 ns t Fall Time 5.3 11 ns f Q Total Gate Charge V = 0 V to 10 V 95 133 nC g GS Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 13 V 43 60 nC Qgs Gate to Source Gate Charge ID = 35 A 18.6 nC Q Gate to Drain “Miller” Charge 8.8 nC gd Drain-Source Diode Characteristics V = 0 V, I = 2 A (Note 2) 0.37 0.7 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 35 A (Note 2) 0.74 1.2 GS S t Reverse Recovery Time 44 71 ns rr I = 35 A, di/dt = 300 A/μs Q Reverse Recovery Charge F 68 109 nC rr Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a b. 125 °C/W when mounted on a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 312 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 25 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 38 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMS7556S Rev.C4

F D Typical Characteristics M T = 25 °C unless otherwise noted J S 7 5 200 14 5 160 VGS = 10 V PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs STANCE 12 VGS = 2.5 V PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs 6S N RRENT (A) 120 VGSV =G S 3 .=5 4V.5 V VGS = 3 V ALIZEDE ON-RESI 108 VGS = 3 V -Chan , IDRAIN CUD 4800 VGS = 2.5 V NORMAIN TO SOURC 246 VGS = 3.5 V VGS = 4.5 V VGS = 10 V nel Pow R e 0 D 0 r 0 0.5 1.0 1.5 2.0 0 40 80 120 160 200 T r VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN C URRENT (A) en c Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance h vs Drain Current and Gate Voltage ® S y 1.5 4 n ALIZEDE ON-RESISTANCE 111...234 IVDG =S 3=5 1 A0 V RAIN TO ()mSISTANCE Ω 23 ID = 35 A PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs cFETTM NORM O SOURC 11..01 rD,DS(on)CE ON-RE 1 TJ = 125 oC AIN T 0.9 OUR TJ = 25 oC R S D 0.8 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 200 200 PULSE DURATION = 80 μs A) 100 VGS = 0 V DUTY CYCLE = 0.5% MAX T ( T (A)160 VDS = 5 V RREN 10 URREN120 TJ = 125 oC AIN CU TJ = 125 oC I, DRAIN CD 4800 TJ = 25 oC EVERSE DR 0.11 TJ = -55T oJC = 25 oC R TJ = -55 oC I, S 0 0.01 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMS7556S Rev.C4

F D Typical Characteristics M T = 25 °C unless otherwise noted J S 7 5 10 10000 5 V) 6 GE ( 8 ID = 35 A Ciss S A N T OL VDD = 10 V F) -C E V 6 E (p h URC VDD = 13 V ANC1000 Coss an O T n ATE TO S 24 VDD = 16 V CAPACI el Po , GGS fV =G S1 =M 0H Vz Crss we V 0 100 r 0 20 40 60 80 100 0.1 1 10 30 T r Qg, GATE C HARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) e n c Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain h to Source Voltage ® S 50 225 y n c A) F ENT ( TJ = 25 oC T (A) 180 VGS = 10 V ET R N T UR 10 TJ = 100 oC RE 135 VGS = 4.5 V M C R E U H C C N ALAN TJ = 125 oC DRAI 90 Limited by Package , AVS , ID 45 RθJC = 1.3 oC/W A I 1 0 0.01 0.1 1 10 100 1000 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 300 1000 SINGLE PULSE 100 W) R = 125 oC/W A) 1ms ER ( TθJ =A 25 oC RENT ( 10 10 ms T POW 100 VGAS = 10V R N RAIN CU 1 TLIHMISIT AERDE BAY I SSrDI NSG(oLn)E PULSE 110 s0 ms TRANSIE 10 I, DD 0.1 TRJθ J=A M= A1X25 R oACT/WED 10 s PEAK TA = 25 oC DC , PK) 1 0.01 P( 0.5 0.01 0.1 1 10 100 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WIDT H (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMS7556S Rev.C4

PQFN85X6,1.27P CASE483AE ISSUEA 5.10 A 5.10 3.91 PKG SEE CL B DETAILB 1.27 8 5 8 7 6 5 0.77 4.52 3.75 PKGCL 6.15 5.85 6.61 5.65 KEEPOUT AREA 1.27 1 4 1 2 3 4 TOPVIEW 1.27 0.61 3.81 LANDPATTERN OPTIONALDRAFT RECOMMENDATION ANGLEMAYAPPEAR SEE ONFOURSIDES 5.00 4.80 DETAILC OFTHEPACKAGE 0.35 0.15 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 0.10 C 0.30 0.05 0.05 SIDEVIEW 0.00 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 8X 0.08 C 0.35 C 5.20 0.15 4.80 1.10 SEATING 0.90 PLANE DETAILC DETAILB 3.81 SCALE:2:1 SCALE:2:1 1.27 0.51 (8X) 0.31 (0.34) NOTES:UNLESSOTHERWISESPECIFIED 0.10 C A B A.PACKAGESTANDARDREFERENCE:JEDECMO-240, 1 2 3 4 ISSUEA,VAR.AA,. B.DIMENSIONSDONOTINCLUDEBURRSORMOLDFLASH. 0.76 MOLDFLASHORBURRSDOESNOTEXCEED0.10MM. 0.51 (0.52) C.ALLDIMENSIONSAREINMILLIMETERS. 6.25 D.DIMENSIONINGANDTOLERANCINGPERASMEY14.5M-2009. 5.90 E.ITISRECOMMENDEDTOHAVENOTRACESOR VIASWITHINTHEKEEPOUTAREA. (0.50) 3.48+0.30 -0.10 (0.30) (2X) 8 7 6 5 +0.10 (cid:19)(cid:17)(cid:23)(cid:23)(cid:147)(cid:19)(cid:17)(cid:20)(cid:19) 0.20 (8X) 3.96 -0.15 3.61 BOTTOMVIEW

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