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F D M C February 2013 8 3 2 FDMC8321L 1 L ® N N-Channel Power Trench MOSFET - C 40 V, 49 A, 2.5 mΩ h a Features General Description n n (cid:132) Max r = 2.5 mΩ at V = 10 V, I = 22 A e DS(on) GS D This N-Channel MOSFET has been designed specifically to l P (cid:132) Max r = 4.1 mΩ at V = 4.5 V, I = 18 A improve the overall efficiency and to minimize switch node DS(on) GS D o ringing of DC/DC converters using either synchronous or w (cid:132) Advanced Package and Silicon combination for low r DS(on) convertional switching PWM contollers. It has been optimized for e and hign efficiency low gate charge, low rDS(on), fast switching speed body diode rT (cid:132) Next Generation enhanced body diode technology, reverse recovery performance. r e engineered for soft recovery n Applications c (cid:132) 100% UIL tested h (cid:132) Synchronous rectifier ® (cid:132) RoHS Compliant M (cid:132) Load switch/Orring O (cid:132) Motor switch S F E T Top Bottom Pin 1 S S D S S G S D S D D D D G D D Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25 °C 49 C I -Continuous T = 25 °C (Note 1a) 22 A D A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 86 mJ AS Power Dissipation T = 25 °C 40 P C W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 3.1 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8321L FDMC8321L Power33 13 ’’ 12 mm 3000 units ©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC8321L Rev.C2

F D Electrical Characteristics T = 25 °C unless otherwise noted M J C Symbol Parameter Test Conditions Min Typ Max Units 8 3 Off Characteristics 2 1 L BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 40 V N Δ BΔVTDSS BCroeeaffkicdioewntn Voltage Temperature ID = 250 μA, referenced to 25 °C 22 mV/°C -C J h IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA a n IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA n e On Characteristics l P V Gate to Source Threshold Voltage V = V , I = 250 μA 1 1.7 3 V o GS(th) GS DS D w ΔVGS(th) Gate to Source Threshold Voltage I = 250 μA, referenced to 25 °C -5 mV/°C e ΔT Temperature Coefficient D r J T V = 10 V, I = 22 A 1.9 2.5 r GS D e r Static Drain to Source On Resistance V = 4.5 V, I = 18 A 2.7 4.1 mΩ n DS(on) GS D c V = 10 V, I = 22 A, T = 125 °C 2.8 3.7 h GS D J ® g Forward Transconductance V = 5 V, I = 22 A 114 S FS DS D M Dynamic Characteristics O S Ciss Input Capacitance 2930 3900 pF F C Output Capacitance VDS = 20 V, VGS = 0 V, 1000 1330 pF E oss f = 1 MHz T C Reverse Transfer Capacitance 60 90 pF rss R Gate Resistance 0.1 0.7 2.5 Ω g Switching Characteristics t Turn-On Delay Time 12 22 ns d(on) tr Rise Time VDD = 20 V, ID = 22 A, 6.1 12 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 32 51 ns t Fall Time 4.9 10 ns f Q Total Gate Charge at 10 V 44 61 nC g(TOT) Q Total Gate Charge at 5 V 21 32 nC g(TOT) V = 20 V, I = 22 A Q Total Gate Charge DD D 7.7 nC gs Q Gate to Drain “Miller” Charge 5.8 nC gd Drain-Source Diode Characteristics V = 0 V, I = 2 A (Note 2) 0.69 1.2 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 22 A (Note 2) 0.77 1.3 GS S t Reverse Recovery Time 41 65 ns rr I = 22 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 20 33 nC rr Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 53 °C/W when mounted on a 125 °C/W when mounted on 1 in2 pad of 2 oz copper a minimum pad of 2 oz copper GDDSS FSFS GDDSS FSFS 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3.Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 24 A, VDD = 36 V, VGS = 10 V. FDMC8321L Rev.C2 2 www.fairchildsemi.com

F D Typical Characteristics M T = 25 °C unless otherwise noted J C 8 3 100 6 2 1 URRENT (A) 6800 VVVGGGSSS = == 441.V 05VG VVS = 3.5 V ALIZEDE ON-RESISTANCE 345 VGS = 3 V PDUULTSYVE GC SDY =UC R3L.EA5 T =VI O0.N5 %= 8M0A μXs L N-Chann C MC e AIN 40 NOROUR 2 VGS = 4 V l P DR VGS = 3 V O S o I, D 200 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs DRAIN T 01 VGS = 4.5 V VGS = 10 V werTr 0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 e n VDS, DRAIN TO SOU RCE VOLTAGE (V) ID, DRAIN CURR ENT (A) c h ® Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance M vs Drain Current and Gate Voltage O S F 1.6 10 E TANCE 11..45 IVDG =S 2=2 1 A0 V ()mΩ 8 ID = 22 A PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs T NORMALIZED TO SOURCE ON-RESIS 01111.....90123 rDRAIN TO ,DS(on)RCE ON-RESISTANCE 246 TJ = 125 oC RAIN 0.8 SOU TJ = 25 oC D 0.7 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 100 100 PULSE DURATION = 80 μs A) VGS = 0 V DUTY CYCLE = 0.5% MAX T ( 80 N 10 A) VDS = 5 V RE CURRENT ( 60 TJ = 150 oC DRAIN CUR 1 TJ = 150 oC TJ = 25 oC N 40 E 0.1 RAI TJ = 25 oC ERS D V , D 20 RE 0.01 I TJ = -55 oC I, S TJ = -55 oC 0 0.001 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC8321L Rev.C2 3 www.fairchildsemi.com

F D Typical Characteristics T = 25 °C unless otherwise noted M J C 8 3 10 10000 2 1 GE (V) 8 ID = 22 A L N OLTA VDD = 16 V VDD = 24 V pF)1000 Ciss -Ch E V 6 E ( a E TO SOURC 4 VDD = 20 V CAPACITANC 100 Coss nnel Po AT 2 w G f = 1 MHz V, GS 0 10 VGS = 0 V Crss erT 0 10 20 30 40 50 0.1 1 10 40 re Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) nc h ® Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage M O S F 100 100 E VGS = 10 V T NT (A) T (A) 80 E N URR TJ = 25 oC RRE 60 VGS = 4.5 V HE C 10 TJ = 100 oC N CU AVALANC TJ = 125 oC , IDRAID 2400 Limited by package I, AS RθJC = 3.1 oC/W 1 0 0.01 0.1 1 10 100 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 200 1000 100 W) SINGLE PULSE R ( RθJA = 125 oC/W T (A) 10 1 ms OWE 100 TA = 25 oC N P RE NT R 10 ms E AIN CU 1 TLIHMISIT AERDE BAY I SrD S(on) 100 ms RANSI 10 DR SINGLE PULSE K T I, D00.0.11 RTTJAθ J ==A M2=5 A1 Xo2C 5R oACT/WED 11D0 Cs s , PPEA()PK 0.15 0.01 0.1 1 10 100200 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WI DTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation FDMC8321L Rev.C2 4 www.fairchildsemi.com

F D Typical Characteristics T = 25 °C unless otherwise noted M J C 8 3 2 1 2 L 1 DUTY CYCLE-DESCENDING ORDER N - D = 0.5 C AL 0.2 h M A 0.1 a ERZJθ 0.1 0.05 n ALIZED TH PEDANCE, 00..0021 PDM t1 nel Po RMIM0.01 t2 w NO SRIθNJAG =L E1 2P5U oLCS/EW NDPEOUATTYKE SFT:AJ C= TPODRM: xD Z =θ JtA1 /xt2 RθJA + TA erTr e n 0.001 c 10-3 10-2 10-1 1 10 100 1000 h t, RECTANGULAR PULSE DURATION (sec) ® M Figure 13. Junction-to-Ambient Transient Thermal Response Curve O S F E T FDMC8321L Rev.C2 5 www.fairchildsemi.com

F D Dimensional Outline and Pad Layout M C 8 3 2 1 L N - C h a n n e l P o w e r T r e n c h ® M O S F E T FDMC8321L Rev.C2 6 www.fairchildsemi.com

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