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F D M www.onsemi.com C 8 0 1 FDMC8010 0 N N-Channel PowerTrench® MOSFET -C h 30 V, 75 A, 1.3 mΩ a n n Features General Description e l (cid:132) Max r = 1.3 mΩ at V = 10 V, I = 30 A This N-Channel MOSFET is produced using ON P DS(on) GS D Semiconductor’s advanced PowerTrench® process that has o (cid:132) Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This w e (cid:132) High performance technology for extremely low r device is well suited for applications where ultra low rDS(on) is r DS(on) required in small spaces such as High performance VRM, POL T (cid:132) Termination is Lead-free and RoHS Compliant and Oring functions. re n c Applications h ® (cid:132) DC - DC Buck Converters M (cid:132) Point of Load O S (cid:132) High Efficiency Load Switch and Low Side Switching F E (cid:132) Oring FET T Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Volage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 75 C -Continuous (Silicon limited) T = 25 °C 166 I C A D -Continuous T = 25 °C (Note 1a) 30 A -Pulsed 120 E Single Pulse Avalance Energy (Note 3) 153 mJ AS Power Dissipation T = 25 °C 54 P C W D Power Dissipation T = 25 °C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8010 FDMC8010 Power 33 13 ’’ 12 mm 3000 units Semiconductor Components Industries, LLC, 2017 Publication Order Number: Apr, 2017, Rev. 1.2 FDMC8010 1

F D Electrical Characteristics T = 25 °C unless otherwise noted M J C Symbol Parameter Test Conditions Min Typ Max Units 8 0 Off Characteristics 1 0 BV Drain to Source Breakdown Voltage I = 1 mA, V = 0 V 30 V N DSS D GS - ΔBVDSS Breakdown Voltage Temperature I = 1 mA, referenced to 25 °C 15 mV/°C C ΔT Coefficient D h J a IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA n n I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS e l On Characteristics P o V Gate to Source Threshold Voltage V = V , I = 1 mA 1.2 1.5 2.5 V w GS(th) GS DS D e Δ ΔVTGS(th) GTeamtep teor aStuoruer cCeo Tehffriceisehnotld Voltage ID = 1 mA, referenced to 25 °C -5 mV/°C rT J r e V = 10 V, I = 30 A 0.9 1.3 GS D n r Static Drain to Source On Resistance V = 4.5 V, I = 25 A 1.3 1.8 mΩ c DS(on) GS D h VGS = 10 V, ID = 30A, TJ = 125 °C 1.3 2 ® gFS Forward Transconductance VDS = 5 V, ID = 30 A 188 S M O Dynamic Characteristics S F Ciss Input Capacitance 4405 5860 pF E C Output Capacitance VDS = 15 V, VGS = 0 V, 1570 2090 pF T oss f = 1 MHz C Reverse Transfer Capacitance 167 250 pF rss R Gate Resistance 0.1 0.5 1.25 Ω g Switching Characteristics t Turn-On Delay Time 15 27 ns d(on) tr Rise Time VDD = 15 V, ID = 30 A, 7.5 15 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 40 64 ns t Fall Time 5.3 11 ns f Q Total Gate Charge V = 0 V to 10 V 67 94 nC g GS Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, 32 45 nC Qgs Gate to Source Charge ID = 30 A 10 nC Q Gate to Drain “Miller” Charge 9.5 nC gd Drain-Source Diode Characteristics V = 0 V, I = 2 A (Note 2) 0.6 1.2 VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 30 A (Note 2) 0.7 1.2 V GS S trr Reverse Recovery Time I = 30 A, di/dt = 100 A/μs 49 78 ns Q Reverse Recovery Charge F 29 46 nC rr Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a b. 125 °C/W when mounted on a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper. GDDSS FSFS GDDSS FSFS 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. EAS of 153 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 32 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 47 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. www.onsemi.com 2

F D M Typical Characteristics TJ = 25°C unless otherwise noted C 8 0 1 120 5 0 VGS = 10 V CE N NT (A) 80 VGVS G=VS 3G =.S5 4 =V V 4.5 V DRESISTAN 4 VGS = 3 V PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs -Chan I, DRAIN CURRE D 40 VGS = 3 V PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs NORMALIZERAIN TO SOURCE ON- 123 VVGGSS == 43..55 VV VVGGSS == 140 V V nel PowerTr 0 D 0 e 0.0 0.2 0.4 0.6 0 40 80 120 n c VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CURR ENT (A) h ® M Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance O vs Drain Current and Gate Voltage S F E 1.6 5 T NCE VIDG =S 3=0 1 A0 V )Ω PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs TA 1.4 (m 4 NORMALIZED O SOURCE ON-RESIS 11..02 rDRAIN TO ,DS(on)CE ON-RESISTANCE 23 TJ = 125 oC ID = 30 A AIN T 0.8 SOUR 1 TJ = 25 oC R D 0.6 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 120 200 PULSE DURATION = 80 μs A) 100 VGS = 0 V DUTY CYCLE = 0.5% MAX T ( N T (A) 80 VDS = 5 V URRE 10 TJ = 150 oC RREN TJ = 150 oC AIN C 1 TJ = 25 oC U R AIN C 40 TJ = 25 oC RSE D 0.1 R E , DD REV 0.01 TJ = -55 oC I TJ = -55 oC I, S 0 0.001 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3

F D Typical Characteristics M T = 25°C unless otherwise noted J C 8 0 10 10000 1 0 E (V) ID = 30 A VDD = 12 V Ciss N AG 8 -C OLT VDD = 15 V pF) Coss ha URCE V 6 VDD = 18 V ANCE (1000 nne E TO SO 4 CAPACIT Crss l Pow , GATS 2 fV =G S1 =M 0H Vz erT VG 0 100 re 0 20 40 60 80 0.1 1 10 30 n Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) ch ® Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain M to Source Voltage O S F E 100 200 T RθJC = 2.3 oC/W NT (A) TJ = 25 oC T (A)150 VGS = 10 V E N RR TJ = 100 oC RE U R C U HE 10 N C100 VGS = 4.5 V VALANC TJ = 125 oC , IDRAID 50 Limited by Package A , S A I 1 0 0.001 0.01 0.1 1 10 100 500 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 200 3000 100 100 μs W)1000 SINGLE PULSE A) ER ( RθJA = 125 oC/W RRENT ( 10 1 ms NT POW 100 TA = 25 oC U E N C 1 TLIHMISIT AERDE BAY I Sr 10 ms NSI , DRAID 0.1 STJIN =G MLAEX P RUALSTDEESD(on) 11 0s0 ms AK TRA 10 I RTAθJ =A 2=5 1 o2C5 oC/W 1D0C s , PE)PK 1 0.010.01 0.1 1 10 100200 P( 0.5 10-4 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WI DTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation www.onsemi.com 4

F D Typical Characteristics M T = 25°C unless otherwise noted J C 8 0 2 DUTY CYCLE-DESCENDING ORDER 1 1 0 N - L D = 0.5 C A M A 0.1 0.2 h RMALIZED THER IMPEDANCE,ZJθ 0.01 0000....1000521 PDM t1t2 annel Pow NO 0.001 SRIθNJAG =L E1 2P5U oLCS/WE NDPEUOATTYKE S FT:AJ C= TPODRM: xD Z =θ JtA1 /xt2 RθJA + TA erT r e 0.0001 n 10-4 10-3 10-2 10-1 1 10 100 1000 c h t, RECTANGULAR PULSE DURATION (sec) ® Figure 13. Junction-to-Ambient Transient Thermal Response Curve M O S F E T www.onsemi.com 5

3.40 2.37 MIN A 3.20 PKG SYM CL B (0.45) 8 CL 5 8 5 2.15 MIN (0.40) PKG 3.40 PKG CL 3.20 CL (0.65) 0.70 MIN 1 4 PIN 1 1 4 INDICATOR 0.65 0.42 MIN (8X) 1.95 SEE DETAIL A LAND PATTERN RECOMMENDATION 0.10 C A B 1.95 0.37 (8X) 0.65 0.27 0.50 1 4 0.30 PKG CL 2.05 1.85 NOTES: UNLESS OTHERWISE SPECIFIED 8 5 A) PACKAGE STANDARD REFERENCE: (0.34) (0.33) TYP JEDEC MO-240, ISSUE A, VAR. BA, (0.52 TYP) (2.27) DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER 0.10 C ASME Y14.5M-1994. E) DRAWING FILE NAME: PQFN08HREV1 0.80 0.70 0.08 C 0.05 C 0.00 0.25 SEATING 0.15 PLANE SCALE: 2X

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