Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D M C 7 June 2014 6 8 FDMC7680 0 N ® - N-Channel Power Trench MOSFET C h 30 V, 14.8 A, 7.2 mΩ a n Features General Description n e l (cid:132) Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild P Semiconductor’s advanced Power Trench® process that has o (cid:132) Max rDS(on) = 9.5 mΩ at VGS = 4.5 V, ID = 12.4 A been especially tailored to minimize the on-state resistance. This w (cid:132) High performance technology for extremely low r device is well suited for Power Management and load switching e DS(on) r (cid:132) Termination is Lead-free and RoHS Compliant applications common in Notebook Computers and Portable T Battery Packs. r e n Application c h (cid:132) DC - DC Buck Converters ® (cid:132) Notebook battery power management M O (cid:132) Load switch in Notebook S F E T Top Bottom Pin 1 G D 5 4 G S S S D 6 3 S D 7 2 S D D DD D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25 °C 18 C I -Continuous T = 25 °C (Note 1a) 14.8 A D A -Pulsed 45 E Single Pulse Avalanche Energy (Note 3) 72 mJ AS Power Dissipation T = 25 °C 31 P C W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.0 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7680 FDMC7680 MLP 3.3x3.3 13 ’’ 12 mm 3000 units ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC7680 Rev.C5

F Electrical Characteristics T = 25 °C unless otherwise noted D J M Symbol Parameter Test Conditions Min Typ Max Units C 7 Off Characteristics 6 8 BV Drain to Source Breakdown Voltage I = 250 μA, V = 0 V 30 V 0 DSS D GS N ΔBV Breakdown Voltage Temperature DSS I = 250 μA, referenced to 25 °C 15 mV/°C - ΔT Coefficient D C J h V = 24 V, V = 0 V 1 I Zero Gate Voltage Drain Current DS GS μA a DSS T = 125 °C 250 n J n IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA e l P On Characteristics o w V Gate to Source Threshold Voltage V = V , I = 250 μA 1.2 2.0 3.0 V GS(th) GS DS D e ΔV Gate to Source Threshold Voltage r ΔTGS(th) Temperature Coefficient ID = 250 μA, referenced to 25 °C -6 mV/°C T J r V = 10 V, I = 14.8 A 5.8 7.2 e GS D n V = 4.5 V, I = 12.4 A 7.3 9.5 c rDS(on) Static Drain to Source On Resistance GS D mΩ h VGS = 10 V, ID = 14.8 A 7.4 9.2 ® T = 125 °C J M gFS Forward Transconductance VDD = 5 V, ID = 14.8 A 68 S O S Dynamic Characteristics F E C Input Capacitance 2145 2855 pF T iss V = 15 V, V = 0 V, C Output Capacitance DS GS 770 1020 pF oss f = 1 MHz C Reverse Transfer Capacitance 75 115 pF rss R Gate Resistance 0.5 1.6 Ω g Switching Characteristics t Turn-On Delay Time 12 22 ns d(on) tr Rise Time VDD = 15 V, ID = 14.8 A, 4 10 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 25 40 ns t Fall Time 3 10 ns f Total Gate Charge V = 0 V to 10 V 30 42 nC Q GS g(TOT) Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V 14 19 nC Qgs Total Gate Charge ID = 14.8 A 7 nC Q Gate to Drain “Miller” Charge 4 nC gd Drain-Source Diode Characteristics V = 0 V, I = 14.8 A (Note 2) 0.84 1.2 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 1.9 A (Note 2) 0.73 1.2 GS S t Reverse Recovery Time 34 54 ns rr I = 14.8 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 15 24 nC rr NOTES: 1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on b.125 °C/W when mounted on a 1 in2 pad of 2 oz copper a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3: EAS of 72 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMC7680 Rev.C5

F D Typical Characteristics M T = 25 °C unless otherwise noted J C 7 6 45 4.0 8 URRENT (A) 2376 VGS = 4 VVVVGGGSSS === 1640 .V5 V V PDUULTSYE C DYUCRLEA T=I O0V.NG5 S%= = 8M 03A .μ5Xs V ALIZEDE ON-RESISTANCE 233...505 VGS = 3.5 V PDUULTSYE C DYUCRLEA T=I O0V.N5 %= = 8M 40A. 5μX sV 0 N-Chann , IDRAIN CD 1809 VGS = 3 V NORMDRAIN TO SOURC 0112....5050 VGVS G=S 4 = V 6 V VGGSS = 10 V el Power Tr 0.0 0.5 1.0 1.5 2.0 0 9 18 27 36 45 e VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CURRENT (A) nc h Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance ® vs. Drain Current and Gate Voltage M O 1.6 25 S E ID = 14.8 A PULSE DURATION = 80 μs F NORMALIZED O SOURCE ON-RESISTANC 111...024 VGS = 10 V rDRAIN TO ,DS(on)()mCE ON-RESISTANCE Ω 112050 ID = 14.8 A DUTTJ Y= C12Y5C oLCE = 0.5% MAX ET T 0.8 R 5 AIN SOU TJ = 25 oC R D 0.6 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs. Gate to vs. Junction Temperature Source Voltage 45 100 PULSE DURATION = 80 μs A) VGS = 0 V DUTY CYCLE = 0.5% MAX T ( 36 N 10 E T (A) VDS = 5 V URR RREN 27 AIN C 1 TJ = 150 oC TJ = 25 oC U R C D N 18 E 0.1 RAI TJ = 150 oC TJ = 25 oC ERS D V , D 9 RE 0.01 TJ = -55 oC I , S TJ = -55 oC I 0 0.001 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current ©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMC7680 Rev.C5

F D Typical Characteristics M T = 25 °C unless otherwise noted J C 7 10 3000 6 8 AGE (V) 8 ID = 14.8 A VDD = 10 V F) Ciss 0 N- OLT VDD = 15 V VDD = 20 V E (p1000 Ch V C CE 6 AN Coss an UR CIT n O A e TO S 4 CAP l P E o GAT 2 100 w V, GS 0 50 fV =G S1 =M 0H Vz Crss er T 0 4 8 12 16 20 24 28 32 0.1 1 10 30 r e Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) n c h Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain ® to Source Voltage M O 20 60 S F E NT (A) 10 T (A) 50 VGS = 10 V T RE TJ = 25 oC EN 40 R R U R E C CU 30 VALANCH TJ = 125 oC TJ = 100 oC , IDRAIN D20 VGS = 4.5 V A 10 Limited by Package I, AS RθJC = 4.0 oC/W 1 0 0.01 0.1 1 10 100 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) Tc, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs. Case Temperature 60 2000 W) 1000 VGS = 10 V 100us R ( 10 E W A) O CURRENT ( 1 TLIHMISIT AERDE BAY I Sr 110 m mss ANSIENT P 100 I, DRAIN D 0.1 RSTJIθN J=AG M=L AE1X 2P 5RU oALCSTD/WEES(Don) 111D00 Cs0 s ms , PEAK TR)K 10 SRIθNJAG =L E1 2P5U oLCS/WE TA = 25 oC P(P 1 TA = 25 oC 0.01 0.5 0.01 0.1 1 10 100 200 10-4 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMC7680 Rev.C5

F D Typical Characteristics M T = 25 °C unless otherwise noted J C 7 6 2 8 1 0 DUTY CYCLE-DESCENDING ORDER N D = 0.5 - MAL A 0.1 00..21 Ch LIZED THER EDANCE,ZJθ 0.01 000...000521 PDM annel P RMAIMP t1 ow NO 0.001 SINGLE PULSE t2 e NOTES: r RθJA = 125 oC/W DUTY FACTOR: D = t1/t2 T 0.0001 PEAK TJ = PDM x ZθJA x RθJA + TA re 10-4 10-3 10-2 10-1 1 10 100 1000 n c t, RECTANGULAR PULSE DURATION (sec) h ® Figure 13. Transient Thermal Response Curve M O S F E T ©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDMC7680 Rev.C5

F D Dimensional Outline and Pad Layout M C 7 6 8 0 N - C h a n n e l P o w e r T r e n c h ® M O S F E T Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, spe- cifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEU-C08 ©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDMC7680 Rev.C5

F D M C 7 6 8 0 N TRADEMARKS - C The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not h intended to be an exhaustive list of all such trademarks. a AccuPower™ F-PFS™ n AX-CAP®* FRFET® ® ®* n BitSiC™ Global Power ResourceSM PowtmerTrench® TinyBoost® el Build it Now™ GreenBridge™ PowerXS™ TinyBuck® P CorePLUS™ Green FPS™ Programmable Active Droop™ CorePOWER™ Green FPS™ e-Series™ QFET® TTiinnyyCLoaglcic™® ow CROSSVOLT™ Gmax™ QS™ TINYOPTO™ e CTL™ GTO™ Quiet Series™ TinyPower™ r CDDuuEraUrle XCnPto EToElr™aDn®sfer Logic™ IIMnStaOerlkPliiMLnAgA NSXAm™Ra™ll Speakers Sound Louder Rapid™Configure™ TTiinnyyPWWireM™™ Tre EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TranSiC™ n TriFault Detect™ c EfficentMax™ MegaBuck™ SignalWise™ TRUECURRENT®* h ESBC™ MICROCOUPLER™ SmartMax™ μSerDes™ ® MicroFET™ SMART START™ ® MicroPak™ Solutions for Your Success™ M Fairchild® MicroPak2™ SPM® O Fairchild Semiconductor® MillerDrive™ STEALTH™ UHC® S FACT Quiet Series™ MotionMax™ SuperFET® Ultra FRFET™ F FACT® mWSaver® SuperSOT™-3 UniFET™ E FAST® OptoHiT™ SuperSOT™-6 VCX™ T FastvCore™ OPTOLOGIC® SuperSOT™-8 VisualMax™ FETBench™ OPTOPLANAR® SupreMOS® VoltagePlus™ FPS™ SyncFET™ XS™ Sync-Lock™ 仙童™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I68 ©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDMC7680 Rev.C5

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