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F D M B April 2014 3 8 0 FDMB3800N 0 N ® Dual N-Channel PowerTrench MOSFET D u 30V, 4.8A, 40mΩ a l N Features General Description - C h (cid:132) Max rDS(on) = 40mΩ at VGS = 10V, ID = 4.8A These N-Channel Logic Level MOSFETs are produced using a Fairchild Semiconductor's advanced PowerTrench process that n (cid:132) Max rDS(on) = 51mΩ at VGS = 4.5V, ID = 4.3A has been especially tailored to minimize the on-state resistance n e (cid:132) Fast switching speed and yet maintain superior switching performance. l P (cid:132) Low gate Charge These devices are well suited for low voltage and battery o w powered applications where low in-line power loss and fast (cid:132) High performance trench technology for extremely low rDS(on) switching are required. er (cid:132) High power and current handling capability. T r e (cid:132) RoHS Compliant n c h ® M O S F E T Q2 D2 5 4 G2 D2 6 3 S2 Q1 D1 7 2 G1 D1 8 1 S1 MicroFET 3X1.9 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25°C (Note 1a) 4.8 I A A D -Pulsed 9 Power Dissipation T = 25°C Note 1a) 1.6 P A W D Power Dissipation T = 25°C (Note 1b) 0.75 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 80 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 165 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 3800 FDMB3800N MicroFET3X1.9 7’’ 8mm 3000 units ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMB3800N Rev.C5

F D Electrical Characteristics M T = 25°C unless otherwise noted J B Symbol Parameter Test Conditions Min Typ Max Units 3 8 0 Off Characteristics 0 N BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 30 V D ΔBVDSS Breakdown Voltage Temperature I = 250μA, referenced to 25°C 24 mV/°C u ΔT Coefficient D a J l I Zero Gate Voltage Drain Current VDS = 24V, 1 μA N DSS VGS = 0V TJ = 55°C 10 -C I Gate to Source Leakage Current V = ±20V, V = 0V ±100 nA h GSS GS DS a n On Characteristics n e V Gate to Source Threshold Voltage V = V , I = 250μA 1 1.9 3 V l GS(th) GS DS D P ΔVGS(th) Gate to Source Threshold Voltage I = 250μA, referenced to 25°C -4 mV/°C o ΔT Temperature Coefficient D w J V = 10V, I = 4.8A 32 40 e GS D r T r Drain to Source On Resistance V = 4.5V, I = 4.3A 41 51 mΩ DS(on) GS D r e V = 10V, I = 4.8A, T = 125°C 43 61 GS D J n g Forward Transconductance V = 5V, I = 4.8A 14 S c FS DS D h ® Dynamic Characteristics M Ciss Input Capacitance 350 465 pF O V =15V, V = 0V, C Output Capacitance DS GS 90 120 pF S oss f = 1MHz F Crss Reverse Transfer Capacitance 40 60 pF E R Gate Resistance f = 1MHz 3 Ω T g Switching Characteristics t Turn-On Delay Time 8 16 ns d(on) V = 15V, I = 1A t Rise Time DD D 5 10 ns r V = 10V, R = 6Ω t Turn-Off Delay Time GS GEN 21 34 ns d(off) t Fall Time 2 10 ns f Qg(TOT) Total Gate Charge at 5V VGS = 0V to 5V VDD = 15V 4 5.6 nC Q Gate to Source Gate Charge I = 7.5A 1.0 nC gs D Q Gate to Drain “Miller” Charge 1.5 nC gd Drain-Source Diode Characteristics I Maximum Continuous Drain - Source Diode Forward Current 1.25 A S V Source to Drain Diode Forward Voltage V = 0V, I = 1.25A (Note 2) 0.8 1.2 V SD GS S t Reverse Recovery Time 17 ns rr I = 4.8A, di/dt = 100A/μs Q Reverse Recovery Charge F 7 nC rr Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 80°C/W when mounted on b. 165°C/W when mounted on a a 1 in2 pad of 2 oz copper minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDMB3800N Rev.C5 2 www.fairchildsemi.com

F D Typical Characteristics M T = 25°C unless otherwise noted J B 3 8 10 2.8 0 VGS = 10V 4.5V 0 6.0V 3.5V CE2.6 N A) 8 TAN2.4 VGS= 3.0V D RAIN CURRENT ( 46 3.0V NORMALIZEDURCE ON-RESIS112...2682 3.5V 4.0V 4.5V 6.0V ual N-Ch D O1.4 a I, D 2 2.5V DRAIN-S1.12 10V nnel 0 0.8 P o 0 0.25 0.5 0.75 1 1.25 0 2 4 6 8 10 w VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) e r T Figure 1. On Region Characteristics Figure 2. Normalized On - Resistance r vs Drain Current and Gate Voltage e n c h 1.6 0.102 ® ANCE1.4 VIDG S= = 4 .180AV E (OHM)0.092 ID = 2.4A MO ST NC0.082 S DESI STA F NORMALIZEOURCE ON-R1.12 URCE ON-RESI000...000567222 TJ = 125oC ET S O RAIN-0.8 N TO S0.042 TJ = 25oC D AI0.032 R D 0.6 0.022 -50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On - Resistance Figure 4. On- Resistance vs Gate to vs Junction Temperature Source Voltage 15 10 12 VDS = 5V TJ = -55oC 125oC25oC T (A) 1 VGS = 0V RENT (A) 9 CURREN 0.1 TJ = 125oC R N AIN CU 6 E DRAI 0.01 25oC -55oC R S D R I, D 3 EVE 0.001 R I, S 0 0.0001 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMB3800N Rev.C5 3 www.fairchildsemi.com

F D Typical Characteristics M T = 25°C unless otherwise noted J B 3 10 600 f = 1MHz 80 TAGE (V) 8 ID = 4.8A VDS = 10V 20V 15V F)500 VGS= 0 V 0N Du ATE-SOURCE VOL 46 CAPACITANCE (p234000000 Coss Ciss al N-Chan V, GGS 2 100 ne Crss l 0 0 P 0 1 2 3 4 5 6 7 8 0 4 8 12 16 20 o w Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) e r Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain T r to Source Voltage e n c 100 6 h® M 5 NT (A) 10 rDS(on) LIMIT 100us NT (A)4 VGS = 10V OSF RE RE E R 1ms R T N CU 1 10ms N CU3 VGS = 4.5V AI AI I, DRD 0.1 SRIθNJVTAG GJ= LS= E1= 2 6 P155U0ooCCVLS/WE D1110s0Cs0ms I, DRD12 RθJA = 80°C/W 0.01 0 0.1 1 10 100 25 50 75 100 125 150 VDS, DRAIN-SOURCE VOLTAGE (V) TA, AMBIENT TEMPERATURE (oC) Figure 9. Forward Bias Safe Figure 10. Maximum Continuous Drain Operating Area Current vs Ambient Temperature 180 W) SINGLE PULSE ER (150 RθJA = 165°C/W OW TA= 25°C T P120 N E NSI 90 A R T K 60 A E P k), 30 p P( 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDMB3800N Rev.C5 4 www.fairchildsemi.com

F D Typical Characteristics M T = 25°C unless otherwise noted J B 3 8 0 E 1 0 C N N EDA D = 00..25 D P M 0.1 u MAL I 0.1 00..0052 al ER 0.01 P(pk) N H - D T t1 C LIZE 0.01 t2 ha MA Peak TJ = TA + PDM *RθJA* ZθJA n NOR Duty Cycle, D = t1 / t2 ne Z, θJA0.001 SINGLE PULSE l P 0.0001 0.001 0.01 0.1 1 10 100 1000 o w t, RECTANGULAR PULSE DURATION (s) e r T r Figure 12. Transient Thermal Response Curve e n c h ® M O S F E T FDMB3800N Rev.C5 5 www.fairchildsemi.com

F D Dimensional Outline and Pad Layout M B 3 8 0 0 N D u a l N - C h a n n e l P o w e r T r e n c h ® M O S F E T Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDE9-X08. FDMB3800N Rev.C5 6 www.fairchildsemi.com

F D M B 3 8 0 0 N TRADEMARKS D The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not u a intended to be an exhaustive list of all such trademarks. l AccuPower™ F-PFS™ N AX-CAP®* FRFET® ® ®* - BitSiC™ Global Power ResourceSM PowtmerTrench® TinyBoost® Ch Build it Now™ GreenBridge™ PowerXS™ TinyBuck® a CCoorreePPLOUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TTiinnyyCLoaglcic™® nn CROSSVOLT™ Gmax™ QS™ TINYOPTO™ e CTL™ GTO™ Quiet Series™ l Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TinyPower™ P DEUXPEED® ISOPLANAR™ ™ TinyPWM™ o Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ w EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TranSiC™ e EfficentMax™ MegaBuck™ SignalWise™ TTRriFUaEuClt UDReRteEcNt™T®* rT ESBC™ MMiIcCrRoFOECTO™UPLER™ SSmMaArRtMTa SxT™ART™ μSerDes™ re ® MicroPak™ Solutions for Your Success™ n Fairchild® MicroPak2™ SPM® ch Fairchild Semiconductor® MillerDrive™ STEALTH™ UHC® ® FACT Quiet Series™ MotionMax™ SuperFET® Ultra FRFET™ FACT® mWSaver® SuperSOT™-3 UniFET™ M FAST® OptoHiT™ SuperSOT™-6 VCX™ O FastvCore™ OPTOLOGIC® SuperSOT™-8 VisualMax™ S FETBench™ OPTOPLANAR® SupreMOS® VoltagePlus™ F FPS™ SyncFET™ XS™ E Sync-Lock™ 仙童™ T *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I68 FDMB3800N Rev.C5 7 www.fairchildsemi.com

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