Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D M A 9 June 2014 1 0 FDMA910PZ P Z Single P-Channel PowerTrench® MOSFET S i n -20 V, -9.4 A, 20 mΩ g l e Features General Description P - (cid:132) Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load C switching in cellular handset and other ultraportable h (cid:132) Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A applications.It features a MOSFET with low on-state resistance an (cid:132) Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A and zener diode protection against ESD. The MicroFET 2X2 n package offers exceptional thermal performance for its physical e (cid:132) Low Profile - 0.8 mm maximum in the new package MicroFET size and is well suited to linear mode applications. l P 2x2 mm o w (cid:132) HBM ESD protection level > 2.8k V typical (Note 3) e (cid:132) Free from halogenated compounds and antimony oxides rT r (cid:132) RoHS Compliant e n c h ® M O Pin 1 D D G S F Bottom Drain Contact E T D 1 6 D Drain Source D 2 5 D G 3 4 S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage ±8 V GS -Continuous T = 25°C (Note 1a) -9.4 I A A D -Pulsed -45 Power Dissipation T = 25°C (Note 1a) 2.4 P A W D Power Dissipation T = 25°C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 52 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 145 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 910 FDMA910PZ MicroFET 2X2 7” 8 mm 3000 units ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMA910PZ Rev.C5

F Electrical Characteristics D T = 25 °C unless otherwise noted J M Symbol Parameter Test Conditions Min Typ Max Units A 9 Off Characteristics 1 0 P BV Drain to Source Breakdown Voltage I = -250 μA, V = 0 V -20 V DSS D GS Z ΔBV Breakdown Voltage Temperature DSS I = -250 μA, referenced to 25 °C -12 mV/°C S ΔTJ Coefficient D in I Zero Gate Voltage Drain Current V = -16 V, V = 0 V -1 μA g DSS DS GS l I Gate to Source Leakage Current V = ±8 V, V = 0 V ±1 μA e GSS GS DS P On Characteristics -C h VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.5 -1.5 V a ΔV Gate to Source Threshold Voltage n GS(th) I = -250 μA, referenced to 25 °C 3 mV/°C n ΔTJ Temperature Coefficient D e l V = -4.5 V, I = -9.4 A 16 20 GS D P V = -2.5 V, I = -8.6 A 19 24 o GS D w rDS(on) Static Drain to Source On Resistance VGS = -1.8 V, ID = -7.2 A 24 34 mΩ e V = -4.5 V, I = -9.4 A, r GS D 20 25 T TJ = 125 °C re g Forward Transconductance V = -5 V, I = -9.4 A 52 S n FS DD D c h Dynamic Characteristics ® C Input Capacitance 2110 2805 pF M iss C Output Capacitance VDS = -10 V, VGS = 0 V, 414 620 pF O oss f = 1 MHz S Crss Reverse Transfer Capacitance 388 580 pF F E Switching Characteristics T t Turn-On Delay Time 9.4 19 ns d(on) V = -10 V, I = -9.4 A, t Rise Time DD D 19 34 ns r V = -4.5 V, R = 6 Ω t Turn-Off Delay Time GS GEN 135 216 ns d(off) t Fall Time 103 165 ns f Qg Total Gate Charge VGS = -4.5 V, VDD = -10 V, 21 29 nC Q Gate to Source Charge I = -9.4 A 2.5 nC gs D Q Gate to Drain “Miller” Charge 6 nC gd Drain-Source Diode Characteristics V = 0 V, I = -2 A (Note 2) -0.6 -1.2 V V Source to Drain Diode Forward Voltage GS S SD V = 0 V, I = -9.4 A (Note 2) -0.8 -1.2 V GS S t Reverse Recovery Time 23 37 ns rr I = -9.4 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 6.3 13 nC rr NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. a. 52 °C/W when mounted b. 145 °C/W when mounted on a on a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMA910PZ Rev.C5

F D Typical Characteristics M T = 25 °C unless otherwise noted J A 9 1 45 0 VGS = -4.5 V E 3 P RENT (A) 30 VVGGSS = = - 2 -.35. 5V V VGS = -1.8 V ESISTANC 2 VGS = -1.5 V VGS = -1.8 V Z Sing UR ZEDN-R le AIN C VGS = -1.5 V RMALIRCE O VGS = -2.5 V P-C DR 15 NOOU 1 h -I, D PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs RAIN TO S PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8MV0AG μSXs = -3.5 V VGS = -4.5 V annel 00.0 0.5 1.0 1.5 2.0 D 0 P 0 15 30 45 o -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) w e Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance r T vs Drain Current and Gate Voltage r e n 60 c 1.4 h DRESISTANCE 11..23 IVDG =S -=9 .-44 .A5 V N TO ()mTANCE Ω 45 PDUULTSYE C DYIDUC =RL EA-9 T=.4I O0 A.N5 %= 8M0A μXs MOSF® NORMALIZE AIN TO SOURCE ON- 011...901 rDRAI,DS(on)SOURCE ON-RESIS 1350 TTJ J= =1 2255 ooCC ET R D 0 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEM PERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 100 45 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs ENT (A) 10 VGS = 0 V A) VDS = -5 V RR T ( 30 CU TJ = 150 oC REN AIN 1 UR DR TJ = 25 oC N C TJ = 150 oC SE 0.1 AI 15 ER -I, DRD TJ = -55T Jo C= 25 oC -I, REVS 0.01 TJ = -55 oC 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.5 1.0 1.5 2.0 -VGS, GATE TO SO URCE VOLTAGE (V) -VSD, BODY DIODE FO RWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMA910PZ Rev.C5

F D Typical Characteristics M T = 25 °C unless otherwise noted J A 9 4.5 5000 10 E (V) ID = -9.4 A Ciss PZ AG VDD = -8 V S OLT3.0 pF) in O SOURCE V1.5 VDD = -10 V VDD = -12 V PACITANCE (1000 CCrossss gle P-C T A h TE C a A n , GGS fV =G S1 =M 0H Vz ne -V0.0 100 l 0 5 10 15 20 25 0.1 1 10 20 P Qg, GATE CH ARGE (nC) -VDS, DRAIN TO SOU RCE VOLTAGE (V) ow e Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain r to Source Voltage T r e n 10-1 100 ch ENT (A)1100--32 VDS = 0 V T (A) 10 100 μs MO® URR10-4 REN SF C10-5 R 1 ms E LEAKAGE 1100--76 TJ = 125 oCTJ = 25 oC DRAIN CU 1 TLSIHMIINSITG AELRDEE BPAYU I SLrDS SE(on) 11000 m mss T -I, GATE g111000-1--980 -I, D 0.1 TTRJAθ J ==A M2 =5A 1oX4C 5R AoCTE/WD 11D0 Cs s 0.01 0 3 6 9 12 15 0.01 0.1 1 10 100 -VGS, GATE TO S OURCE VOLTAGE (V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Figure 10. Forward Bias Safe Source Voltage Operating Area 1000 W) R ( E W 100 O P T N E NSI A 10 R T SINGLE PULSE AK R = 145 oC/W E θJA , PK) TA = 25 oC P 1 P( 0.5 10-4 10-3 10-2 10-1 1 10 100 1000 t, PULSE WIDTH (s ec) Figure 11. Single Pulse Maximum Power Dissipation ©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMA910PZ Rev.C5

F D Typical Characteristics M T = 25 °C unless otherwise noted J A 9 2 1 DUTY CYCLE-DESCENDING ORDER 0 1 P Z L D = 0.5 S A ERMZJAθ 0.1 00..21 ing ALIZED TH PEDANCE, 000...000521 PDM t1 le P-C RMIM 0.01 t2 h NO SRIθNJAG =L E1 4P5U oLCS/EW NDPEOUATTYKE SFT:AJ C= TPODRM: xD Z =θ JtA1 /xt2 RθJA + TA anne l 0.001 P 10-4 10-3 10-2 10-1 1 10 100 1000 o w t, RECTANGULAR PULSE DURATION (sec) e Figure 12. Junction-to-Ambient Transient Thermal Response Curve r T r e n c h ® M O S F E T ©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDMA910PZ Rev.C5

F D Dimensional Outline and Pad Layout M A 9 1 0 P Z S i n g l e P - C h a n n e l P o w e r T r e n c h ® M O S F E T Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-C06 ©2012 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDMA910PZ Rev.C5

F D M A 9 1 0 P TRADEMARKS Z The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not S intended to be an exhaustive list of all such trademarks. i AccuPower™ F-PFS™ n AX-CAP®* FRFET® ® ®* g BBiutSildiC it™ Now™ GGlroebeanlB Priodwgeer™ ResourceSM PPoowwtmeerrTXrSe™nch® TTiinnyyBBouocks®t® le P CCCooRrrOeePPSOLSUVWSOE™LRT™™ GGGmrreeaeexnn™ FFPPSS™™ e-Series™ PQQrFSoE™gTra®mmable Active Droop™ TTiinnyyCLoaglcic™® -Ch CTL™ GTO™ Quiet Series™ TINYOPTO™ a TinyPower™ n CDuErUreXnPt ETEraDn®sfer Logic™ IISntOelPliMLAANXA™R™ Rapid™Configure™ TTiinnyyWPWireM™™ ne DEcuoaSl CPAooRl™K® Manadr kBinegtt eSrm™all Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC™ l P TriFault Detect™ EESffiBceCn™tMax™ MMeICgRaBOuCcOk™UPLER™ SSimgnaartlMWaisxe™™ TRUECURRENT®* ow μSerDes™ ® MicroFET™ SMART START™ e MicroPak™ Solutions for Your Success™ r Fairchild® MicroPak2™ SPM® Tr Fairchild Semiconductor® MillerDrive™ STEALTH™ UHC® e FACT Quiet Series™ MotionMax™ SuperFET® Ultra FRFET™ n FACT® mWSaver® SuperSOT™-3 UniFET™ ch FFaAsStvTC®ore™ OOPptToOHLiTO™GIC® SSuuppeerrSSOOTT™™--68 VVCisXua™lMax™ ® FETBench™ OPTOPLANAR® SupreMOS® VoltagePlus™ M FPS™ SyncFET™ XS™ O Sync-Lock™ 仙童™ S F E T *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I68 ©2012 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDMA910PZ Rev.C5

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