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F D October 2000 G 3 2 8 P FDG328P  P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in • –1.5 A, –20 V. R = 0.145 Ω @ V = –4.5 V a rugged gate version of Fairchild Semiconductor’s DS(ON) GS R = 0.210 Ω @ V = –2.5 V advanced PowerTrench process. It has been optimized DS(ON) GS for power management applications for a wide range of • Low gate charge gate drive voltages (2.5V – 12V). • High performance trench technology for extremely Applications low R DS(ON) • Load switch • Compact industry standard SC70-6 surface mount • Power management package • DC/DC converter S D 1 6 D 2 5 G D 3 4 Pin 1 D SC70-6 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS VGSS Gate-Source Voltage ± 12 V ID Drain Current – Continuous (Note 1a) –1.5 A – Pulsed –6 PD Power Dissipation for Single Operation (Note 1a) 0.75 W (Note 1b) 0.48 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .28 FDG328P 7’’ 8mm 3000 units 2000 Fairchild Semiconductor International FDG328P Rev C(W)

F D Electrical Characteristics T = 25°C unless otherwise noted G A 3 Symbol Parameter Test Conditions Min Typ Max Units 2 8 Off Characteristics P BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C –9 mV/°C ∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA I Gate–Body Leakage, Forward V = 12 V, V = 0 V 100 nA GSSF GS DS I Gate–Body Leakage, Reverse V = –12 V, V = 0 V –100 nA GSSR GS DS On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.6 –1.5 V ∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C 3 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = –4.5 V, ID = –1.5 A 120 145 mΩ On–Resistance V = –2.5 V, I = –1.2 A 169 210 GS D V = –4.5 V, I = –1.5 A, T=125°C 156 203 GS D J I On–State Drain Current V = –4.5 V, V = –5 V –3 A D(on) GS DS g Forward Transconductance V = –5 V, I = –1.5 A 5 S FS DS D Dynamic Characteristics Ciss Input Capacitance VDS = –10 V, V GS = 0 V, 337 pF C Output Capacitance f = 1.0 MHz 88 pF oss C Reverse Transfer Capacitance 51 pF rss Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = –10 V, ID = 1 A, 9 18 ns V = –4.5 V, R = 6 Ω t Turn–On Rise Time GS GEN 12 22 ns r t Turn–Off Delay Time 10 20 ns d(off) t Turn–Off Fall Time 5 10 ns f Qg Total Gate Charge VDS = –10 V, ID = –1.5 A, 3.7 6 nC V = –4.5 V Q Gate–Source Charge GS 0.7 nC gs Q Gate–Drain Charge 1.3 nC gd Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current –0.62 A S VSD Drain–Source Diode Forward VGS = 0 V, IS = –0.62 A (Note 2) –0.7 –1.2 V Voltage Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a.) 170°/W when mounted on a 1 in2 pad of 2 oz. copper. b.) 260°/W when mounted on a minimum pad. 2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG328P Rev C(W)

FF DD Typical Characteristics GG 33 6 2.5 -I, DRAIN CURRENT (A)D12345 VGS = -4.5V -3.0V-3.5V-2.5V -2.0V-1.8V R, NORMALIZEDDS(ON)RAIN-SOURCE ON-RESISTANCE112...1272.155255 VGS = -2.0V -2.5V -3.0V -3.5V -4.5V 28P28P D 0 0.75 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Characteristics Current 1.5 0.4 ANCE1.4 VIGDS = = - 1-4.5.5AV HM) 0.35 ID = -0.8 A R, NORMALIZEDDS(ON)DRAIN-SOURCE ON-RESIST00111.....891123 R, ON-RESISTANCE (ODS(ON)00..00012...55123 TA = 25oC TA = 125oC 0.7 0.05 -50 -25 0 25 50 75 100 125 150 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with withTemperature. Gate-to-Source Voltage. 6 10 T (A) 5 VDS = -5V TA = -55oC 125oC25oC RRENT (A) 1 VGS = 0V TA = 125oC EN 4 CU 0.1 25oC CURR 3 RAIN -55oC -I, DRAIN D12 -I, REVERSE DS 0.00.0011 0.0001 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Typical Characteristics FDG328P Rev C(W)

5 600 V) ID = -1.5A VDS = - -10V f = 1MHz GE ( 4 500 VGS = 0 V SOURCE VOLTA 23 -15V ACITANCE (pF)340000 CISS ATE- CAP200 -V, GGS1 100 CCROSSSS 0 0 0 1 2 3 4 5 0 5 10 15 20 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 30 SINGLE PULSE RθJA = 260oC/W T (A) 10 RDS(ON) LIMIT 100µs 24 TA = 25oC N 1ms AIN CURRE 1 1s100m1s0ms OWER (W)1128 DR VGS = -4.5V DC P -I, D 0.1 SRIθNJAG =L E2 6P0UoCL/SWE 6 TA = 25oC 0.01 0 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 E C FFECTIVE RESISTAN 0.1 D = 00..205.1 RRθJθAJ(At )= = 2 r6(0t) °+C R/WθJA ORMALIZED ENT THERMAL 0.01 0.00.5002.01 SINGLE PULSE DPTu(Jpt y-k T)CAy c=tl1 ePt,2 D* R =θ JtA1 (/t )t2 NE r(t), ANSI R T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDG328P Rev C(W)

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FASTr™ PowerTrench SyncFET™ Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™ CoolFET™ GTO™ QS™ UHC™ CROSSVOLT™ HiSeC™ QT Optoelectronics™ VCX™ DOME™ ISOPLANAR™ Quiet Series™ E2CMOSTM MICROWIRE™ SILENT SWITCHER EnSignaTM OPTOLOGIC™ SMART START™ FACT™ OPTOPLANAR™ SuperSOT™-3 FACT Quiet Series™ PACMAN™ SuperSOT™-6 FAST POP™ SuperSOT™-8 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G

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