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F D D 8 March 2015 7 7 FDD8770/FDU8770 0 / F ® N-Channel PowerTrench MOSFET D U 25V, 35A, 4.0mΩ 8 7 General Description Features 7 0 This N-Channel MOSFET has been designed specifically (cid:132) Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A N - to improve the overall efficiency of DC/DC converters using C either synchronous or conventional switching PWM (cid:132) Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A h controllers. It has been optimized for low gate charge, low a r and fast switching speed. (cid:132) Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V n DS(on) n (cid:132) Low gate resistance e l Application (cid:132) RoHS Compliant LEA D FREEIMPL Po EME w (cid:132) Vcore DC-DC for Desktop Computers and Servers ANT e (cid:132) VRM for Intermediate Bus Architecture NOIT rT r e n c D h ® M G O D G D S I-PAK S G SF Short Lead I-PAK E (TO-251AA) T S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package Limited) 35 I -Continuous (Die Limited) 210 A D -Pulsed (Note 1) 407 E Single Pulse Avalanche Energy (Note 2) 113 mJ AS P Power Dissipation 115 W D T , T Operating and Storage Temperature -55 to 175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case TO-252,TO-251 1.3 °C/W θJC R Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W θJA R Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8770 FDD8770 TO-252AA 13’’ 16mm 2500 units FDU8770 FDU8770 TO-251AA N/A(Tube) N/A 75 units FDU8770 FDU8770_F071 TO-251AA N/A(Tube) N/A 75 units ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD8770/FDU8770 Rev. 1.2

Electrical Characteristics F TJ = 25°C unless otherwise noted D D Symbol Parameter Test Conditions Min Typ Max Units 8 Off Characteristics 7 7 B Drain to Source Breakdown Voltage I = 250µA, V = 0V 25 V 0 VDSS D GS / ∆B Breakdown Voltage Temperature I = 250µA, referenced to F VDSS D 13.6 mV/°C D ∆T Coefficient 25°C J U V = 20V, 1 I Zero Gate Voltage Drain Current DS µA 8 DSS VGS = 0V TJ = 150°C 250 7 I Gate to Source Leakage Current V = ±20V ±100 nA 7 GSS GS 0 On Characteristics N - C V Gate to Source Threshold Voltage V = V , I = 250µA 1.2 1.6 2.5 V GS(th) GS DS D h ∆V Gate to Source Threshold Voltage I = 250µA, referenced to GS(th) D -5.9 mV/°C a ∆TJ Temperature Coefficient 25°C n V = 10V, I = 35A 3.3 4.0 n GS D e rDS(on) Drain to Source On Resistance VVGS == 41.05VV,, IID == 3355AA 4.0 5.5 mΩ l P TG S= 175°C D 4.8 5.9 o J w Dynamic Characteristics e r T C Input Capacitance 2795 3720 pF iss V = 13V, V = 0V, r C Output Capacitance DS GS 685 915 pF e oss f = 1MHz n Crss Reverse Transfer Capacitance 450 675 pF c R Gate Resistance f = 1MHz 1.5 Ω h g ® Switching Characteristics M O t Turn-On Delay Time 10 20 ns d(on) V = 13V, I = 35A S t Rise Time DD D 12 22 ns r V = 10V, R = 5Ω F td(off) Turn-Off Delay Time GS GS 49 78 ns E t Fall Time 25 40 ns T f Q Total Gate Charge V = 0V to 10V 52 73 nC g GS V = 13V Q Total Gate Charge V = 0V to 5V DD 29 41 nC g GS I = 35A Q Gate to Source Gate Charge D 8.1 nC gs I = 1.0mA g Q Gate to Drain “Miller”Charge 11 nC gd Drain-Source Diode Characteristics V = 0V, I = 35A 0.84 1.25 V Source to Drain Diode Forward Voltage GS S V SD V = 0V, I = 15A 0.79 1.0 GS S t Reverse Recovery Time I = 35A, di/dt = 100A/µs 32 48 ns rr F Q Reverse Recovery Charge I = 35A, di/dt = 100A/µs 25 38 nC rr F Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.3mH, IAS = 27.5A ,VDD = 23V, VGS = 10V. 2 www.fairchildsemi.com FDD8770/FDU8770 Rev. 1.2

F Typical Characteristics D T = 25°C unless otherwise noted J D 8 7 120 4 7 E DRAIN CURRENT (A) 104680000 VGS =V V3G.GS5S V= = 1 40.V5V PDUULTSYE C DVYUGCSRL E=A T =3I VO0.N5 %= M80AµXs NORMALIZEDOURCE ON-RESISTANC 23 VGS = 3V PDVUUGLTSSY E= C 3DY.UC5VRLEA TV=I GO0S.N 5= %= 4 M8.50AVµXs 0/FDU8770 N I, D 20 N TO S 1 VGS = 10V -Ch AI a 0 DR 0 n 0 1 2 3 4 0 20 40 60 80 100 120 n VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A) e l P Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain o Current and Gate Voltage w e r 1.8 12 T E TANC1.6 VIDG S= =3 51A0V m)Ω10 ID = 35A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs ren SIS CE ( ch ORMALIZED URCE ON-RE111...024 N-RESISTAN 68 TJ = 175oC MOS® NAIN TO SO0.8 r, ODS(on) 4 TJ = 25oC FET R0.6 2 D -80 -40 0 40 80 120 160 200 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOUR CE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source Temperature Voltage 120 100 100 PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs T (A) VGS = 0V A) EN 10 ENT ( 80 TJ = 175oC CURR 1 TJ = 175oC TJ = 25oC R N UR 60 AI C R RAIN 40 TJ = 25oC RSE D 0.1 TJ = -55oC D E I, D 20 TJ = -55oC REV0.01 , S 0 I1E-3 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOUR CE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8770/FDU8770 Rev. 1.2

F Typical Characteristics T = 25°C unless otherwise noted D J D 8 V) 10 6000 77 GE( Ciss 0 A 8 /F T OL F) D CE V 6 VDD = 10V VDD = 13V CE (p1000 Coss U8 R N 7 U A O T 7 O S 4 VDD = 16V ACI Crss 0 T P N E A AT 2 C f = 1MHz -C , GS VGS = 0V h VG 00 10 20 30 40 50 60 1000.1 1 10 30 an Qg, GATE CH ARGE(nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) ne l Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage P o w 50 250 e r T ) A r ENT( TJ = 25oC T (A)200 en ANCHE CURR 10 TJ = 150oC TJ = 125oC RAIN CURREN110500 VGS = 4.5V VGS = 10V ch MO® AVAL I, DD 50 RθJC = 1.3oC/W SF , S E IA 1 0 T 0.01 0.1 1 10 100 300 25 50 75 100 125 150 175 tAV, TIME IN AV ALANCHE(ms) TC, CASE TEMPE RATURE(oC) Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain Current vs Capability Case Temperature 600 20000 10us W) VGS = 10V TC = 25oC R (10000 FOR TEMPERATURES A)100 WE ABOVE 25oC DERATE PEAK RRENT ( 10 100us ENT PO CUI =R RI2E5 NT A1-S---7- --F51---O-5-–--0-L--T--L-C---OWS: U SI C 1ms N 1000 AIN LPIAMCITKEADG BEY TRA I, DRD 0.111OALIRPMEEITARE AMDTA IBOYYN B rIEDN S T(oHnI)S STTJCIN ==G M2L5AE1o XPC0 URLASTEED 1D0mCs 50 P, PEAK ()PK 10010-5SINGL1E0 -P4ULSE10-3 10-2 10-1 100 101 VDS, DRAIN TO SOUR CE VOLTAGE (V) t, PULSE WID TH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8770/FDU8770 Rev. 1.2

F Typical Characteristics T = 25°C unless otherwise noted D J D 8 7 2 7 1 DUTY CYCLE-DESCENDING ORDER 0 / F AL D = 0.5 D LIZED THERMEDANCE, ZJCθ 0.1 00000.....21000521 PDM t1 U8770 MAMP0.01 t2 N RI NOTES: - O DUTY FACTOR: D = t1/t2 C N SINGLE PULSE PEAK TJ = PDM x ZθJC x RθJC + TC h a 1E-3 n 10-5 10-4 10-3 10-2 10-1 100 101 n t, RECTANGULAR PULSE DURATION(s) e l P Figure 13. Transient Thermal Response Curve o w e r T r e n c h ® M O S F E T 5 www.fairchildsemi.com FDD8770/FDU8770 Rev. 1.2

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