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F D D 8 March 2015 4 5 1 FDD8451 N N-Channel PowerTrench® MOSFET(cid:3) -C h 40V, 28A, 24m(cid:58) a n Features General Description n e (cid:132) Max rDS(on)(cid:32) 24m(cid:58) at VGS= 10V, ID = 9A This N-Channel MOSFET has been designed specifically l to improve the overall efficiency of DC/DC converters using P (cid:132) Max rDS(on)(cid:32) 30m(cid:58) at VGS= 4.5V, ID = 7A either synchronous or conventional switching PWM o w controllers. It has been optimized for low gate charge, fast (cid:132) Low gate charge switching speed and extremely low r . e DS(on) r T (cid:132) Fast Switching Application r e (cid:132) High performance trench technology for extremely low n r (cid:132) DC/DC converter c (cid:132) RDoSH(oSn) compliant LEA D FREEIMPL (cid:132) Backlight inverter h ® EM M E NT O A NOIT S F E T D G S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous(cid:3)@TC=25°C 28 ID -Continuous @TA=25°C(cid:3) (Note 1a) 9 A -Pulsed 78 E Single Pulse Avalanche Energy (Note 3) 20 mJ AS P Power Dissipation 30 W D T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.1 °C/W (cid:84)JC R Thermal Resistance, Junction to Ambient (Note 1a) 40 °C/W (cid:84)JA R Thermal Resistance, Junction to Ambient (Note 1b) 96 °C/W (cid:84)JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8451 FDD8451 D-PAK(TO-252) 13’’ 16mm 2500 units ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD8451 Rev. 1.2

F Electrical Characteristics D T = 25°C unless otherwise noted J D Symbol Parameter Test Conditions Min Typ Max Units 8 4 Off Characteristics 5 1 BVDSS Drain to Source Breakdown Voltage ID = 250(cid:80)A, VGS = 0V 40 V N (cid:39)(cid:3)(cid:3)(cid:3)B(cid:39)VTDJSS BCroeeaffkicdioewntn Voltage Temperature I2D5 °=C 250(cid:80)A, referenced to 33.5 mV/°C -C h IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 (cid:80)A a I Gate to Source Leakage Current V = ±20V, V = 0V ±100 nA n GSS GS DS n On Characteristics e l VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250(cid:80)A 1 2.1 3 V P o (cid:3)(cid:39)VGS(th) Gate to Source Threshold Voltage ID = 250(cid:80)A, referenced to -5.7 mV/°C w (cid:3)(cid:3)(cid:3)(cid:39)TJ Temperature Coefficient 25°C e VGS = 10V, ID = 9A 19 24 r T V = 4.5V, I = 7A 23 30 rDS(on) Drain to Source On Resistance GS D m(cid:58) re V = 10V, I = 9A GS D 32 41 n T = 150°C J c g Forward Transcondductance V = 5V, I = 9A 29 S h FS DS D ® Dynamic Characteristics M C Input Capacitance 780 990 pF O iss C Output Capacitance VDS = 20V, VGS = 0V, 112 150 pF S oss f = 1MHz F Crss Reverse Transfer Capacitance 72 110 pF E Rg Gate Resistance f = 1MHz 1.1 (cid:58) T Switching Characteristics t Turn-On Delay Time 7 14 ns d(on) t Rise Time VDD = 20V, ID = (cid:28)A 3 10 ns tr Turn-Off Delay Time VGS = 10V, RGEN = 6(cid:58) 19 34 ns d(off) t Fall Time 2 10 ns f Q Total Gate Charge at 10V 16 20 nC g Qg Total Gate Charge at 5V VDS= 20V, ID = 9A 8.6 11 nC Qgs Gate to Source Gate Charge VGS = 10V 2.5 nC Q Gate to Drain “Miller”Charge 3.7 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0V, I = 9A 0.87 1.2 V SD GS S trr Reverse Recovery Time IF = 9A, di/dt = 100A/(cid:80)s 25 38 ns Qrr Reverse Recovery Charge IF = 9A, di/dt = 100A/(cid:80)s 19 29 nC Notes: 1: R(cid:84)JA is the sum of the junction-to-caseand case-to-ambient thermalresistance wherethe case thermalreference is defined as the soldermounting surface of the drain pins. R(cid:84)JC(cid:3)is guaranteed by design while R(cid:84)JA is determinedby the user’s board design. a) 40 °C/W whenmountedona b) 96 °C/W whenmounted on 1 in2padof 2 ozcopper a minimum pad 2: PulseTest: Pulse Width < 300(cid:80)s, Duty cycle < 2.0%. 3: StartingTJ=25°C,L= 0.1mH,IAS= 20 A,VDD=36 V, VGS= 10V. FDD8451 Rev. 1.2 2 www.fairchildsemi.com

F Typical Characteristics D T = 25°C unless otherwise noted J D 8 4 60 4.0 5 VGS = 10V PULSE DURATION = 80(cid:80)s CE PULSE DURATION = 80(cid:80)s 1 A) 50 DUTY CYCLE = 0.5%MAX AN3.5 DUTY CYCLE = 0.5%MAX N NT ( VGS= 4V SIST3.0 -C CURRE 3400 VGS= 4.5V ALIZEDE ON-RE2.5 VGS= 3V VGS =3.5V han DRAIN 20 VGS = 3.5V NORMSOURC12..50 VGS = 4V VGS =5V nel I, D10 N TO 1.0 Po 0 VGS= 3V DRAI0.5 VGS = 10V we 0 1 2 3 4 0 10 20 30 40 50 60 r VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A) Tr e n Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain c Current and Gate Voltage h ® M 2.0 160 ANCE1.8 V IDG S= =9 A10V )m(cid:58) ID= 10A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80A(cid:80)Xs OS NORMALIZEDO SOURCE ON-RESIST1111....0246 r, DRAIN TO DS(on)(CE ON-RESISTANCE 1248000 TJ= 175oC FET RAIN T00..68 SOUR 0 TJ= 25oC D -80 -40 0 40 80 120 160 200 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source Temperature Voltage 40 100 PULSE DURATION = 80(cid:80)s A) VGS= 0V A) DUTY CYCLE = 0.5%MAX T ( T ( 30 EN 10 N R RE UR TJ= 175oC R C 1 U N AIN C 20 TJ= 175oC DRAI 0.1 TJ = 25oC R E D S I, D 10 TJ = 25oC VER 0.01 TJ = -55oC E R TJ = -55oC , S 0 I 1E-3 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD8451 Rev. 1.2 3 www.fairchildsemi.com

F Typical Characteristics T = 25°C unless otherwise noted D J D 8 V)10 4 E( 3000 5 G 1 OLTA 8 VDD= 15V pF)1000 Ciss N SOURCE V 6 VDD = 25VVDD = 20V CITANCE ( Coss -Chan O 4 PA 100 n E T CA Crss e GAT 2 f = 1MHz l P , S VGS = 0V o G w V 0 10 0 4 8 12 16 0.1 1 10 40 e r Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V) T r e Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage n c h ® 100 A) 30 M T( N O RRE T (A) 25 S U N F E C TJ= 25oC RE 20 VGS= 10V E H R T NC 10 TJ= 125oC CU 15 A N AVAL DRAI 10 VGS=4.5V , AS TJ= 150oC I, D 5 I o 1 0 R(cid:84)JC = 4.1 C/W 1E-3 0.01 0.1 1 10 100 40 60 80 100 120 140 160 175 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE(oC) Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain Current vs Capability Case Temperature 100 10000 100us W) V = 10V TC = 25oC R ( GS FOR TEMPERATURES A) WE ABOVE 25oC DERATE PEAK RENT (10 LIMITED BY 1ms ENT PO1000 CUI =R RI2E5 NT A1-S--7-- -F5-1---O5-–--0-L-T---L-C---OWS: UR PACKAGE NSI C A AIN 1 OARPEEAR AMTAIOYN B IEN THIS 10ms K TR 100 R LIMITED BY rDS(on) A I, DD0.1 TSTCJIN ==G ML25EAO XPC URLASTEED 10D0Cms P, PE()PK 10 SINGLE PULSE 1 10 80 10-5 10-4 10-3 10-2 10-1 100 101 V , DRAIN-SOURCE VOLTAGE (V) t, PULSE WIDTH (s) DS Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDD8451 Rev. 1.2 4 www.fairchildsemi.com

F Typical Characteristics T = 25°C unless otherwise noted D J D 8 4 5 2 1 1 DUTY CYCLE-DESCENDING ORDER N L - MA A D = 0.5 C ZED THERANCE, ZJ(cid:84)0.1 0000....210052 PDM hann ORMALIIMPED 0.01 t1t2 el P N SINGLE PULSE NOTES: o 0.01 DUTY FACTOR: D = t1/t2 w PEAK TJ = PDM x Z(cid:84)JC x R(cid:84)JC + TC e 0.005 r 10-5 10-4 10-3 10-2 10-1 100 101 T r t, RECTANGULAR PULSE DURATION (s) e n Figure 13. Transient Thermal Response Curve c h ® M O S F E T FDD8451 Rev. 1.2 5 www.fairchildsemi.com

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