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F D D 8 4 March 201 5 4 7 L FDD8447L 4 ® 0 40V N-Channel PowerTrench MOSFET V N 40V, 50A, 8.5mΩ - C Features General Description h a n (cid:132) Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild n Semiconductor’s proprietary PowerTrench® technology to e (cid:132) Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A deliver low rDS(on) and optimized BVDSS capability to offer l P (cid:132) Fast Switching superior performance benefit in the application. o w (cid:132) RoHS Compliant e r T Applications r e n (cid:132) Inverter c h (cid:132) Power Supplies ® M O D S F E T D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 50 C I -Continuous (Silicon limited) TC= 25°C 57 A D -Continuous TA= 25°C (Note 1a) 15.2 -Pulsed 100 I Max Pulse Diode Current 100 A S E Drain-Source Avalanche Energy (Note 3) 153 mJ AS Power Dissipation T = 25°C 44 C PD TA= 25°C (Note 1a) 3.1 W T = 25°C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.8 θJC R Thermal Resistance, Junction to Ambient (Note 1a) 40 °C/W θJA RθJA Thermal Resistance, Junction to Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8447L FDD8447L D-PAK(TO-252) 13’’ 16mm 2500 units ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD8447L Rev. 1.2

F D Electrical Characteristics D T = 25°C unless otherwise noted J 8 4 Symbol Parameter Test Conditions Min Typ Max Units 4 7 Off Characteristics L 4 BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V 0 V ∆BV Breakdown Voltage Temperature ∆TDSS Coefficient ID = 250µA, referenced to 25°C 35 mV/°C N J - I Zero Gate Voltage Drain Current V = 32V, V = 0V 1 µA C DSS DS GS h IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA a n On Characteristics (Note 2) n e l VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.9 3.0 V P ∆V Gate to Source Threshold Voltage o ∆TGJS(th) Temperature Coefficient ID = 250µA, referenced to 25°C -5 mV/°C we VGS = 10V, ID = 14A 7.0 8.5 rT rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 11A 8.5 11.0 mΩ re VGS = 10V, ID = 14A, TJ=125°C 10.4 14.0 n c gFS Forward Transconductance VDS = 5V, ID = 14A 58 S h ® Dynamic Characteristics M C Input Capacitance 1970 pF O iss V = 20V, V = 0V, S Coss Output Capacitance f =D S1MHz GS 250 pF F C Reverse Transfer Capacitance 150 pF E rss T R Gate Resistance f = 1MHz 1.27 Ω g Switching Characteristics t Turn-On Delay Time 12 21 ns d(on) V = 20V, I = 1A t Rise Time DD D 12 21 ns r V = 10V, R = 6Ω t Turn-Off Delay Time GS GEN 38 61 ns d(off) t Fall Time 9 18 ns f Q Total Gate Charge, V = 10V 37 52 nC g(TOT) GS Qg(TOT) Total Gate Charge, VGS = 5V VVDD == 1200VV, ID = 14A 20 28 nC Q Gate to Source Gate Charge GS 6 nC gs Q Gate to Drain “Miller” Charge 7 nC gd Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current (Note 1a) 2.6 A VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 14A (Note 2) 0.8 1.2 V Qtrrrr RReevveerrssee RReeccoovveerryy CTihmaerge I F = 1 4A, di/dt = 1 0 0 A / µ s 2121 nnCs Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while R--θ--J--A-- -i-s-- -d---etermined by th e u s er’s board design. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25o C , L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V. 4 FDD8447L Rev. 1.2 2 www.fairchildsemi.com

F D D Typical Characteristics 8 4 4 7 L 4 100 3 0 VGS = 10V 4.0V VGS = 3.0V V CURRENT (A) 6800 6.0V 5.0V 4.5V 3.5V MALIZEDE ON-RESISTANCE122...826 N-Chann I, DRAIN D 2400 NORAIN-SOURC1.4 3.5V 4.0V 4.5V 5.0V 6.0V 10.0V el Po 3.0V DR 1 w e 0 0.6 rT 0 0.5 1 1.5 2 2.5 0 20 40 60 80 100 r VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) e n c Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with h Drain Current and Gate Voltage ® M O 1.6 0.02 S NCE VIGDS = = 1 140AV M)0.0175 ID = 7A FE TA1.4 OH T MALIZEDE ON-RESIS1.2 SISTANCE (0.00.011255 TA = 125oC RC E NODRAIN-SOUR0.18 r, ON-RDS(ON)0.000.7051 TA = 25oC 0.6 0.005 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature Gate-to-Source Voltage 1000 100 VGS = 0V VDS = 5V A) 100 AIN CURRENT (A) 468000 E DRAIN CURRENT ( 01.101 TA = 125oC 25oC I, DRD 20 TA = 125oC -55oC EVERS 0.01 -55oC 25oC I, RS 0.001 0 0.0001 1 1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD8447L Rev. 1.2 3 www.fairchildsemi.com FDD8447L Rev.C 3 www.fairchildsemi.com

F D D Typical Characteristics 8 4 4 7 L 4 10 3000 0 E (V) 8 ID = 14A VDS = 10V 30V 2500 Vf G=S 1 =M 0H Vz V N G - SOURCE VOLTA 46 20V ACITANCE (pF)12500000 Ciss Channe V, GATE-GS 2 CAP1050000 Coss l Pow 0 0 Crss erT 0 10 20 30 40 0 10 20 30 40 r Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) e n c Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics h ® 1000 100 M W) SINGLE PULSE O RENT (A) 11000 RDS(ON) LIMIT 10ms 1ms 100µs ENT POWER ( 6800 RθTJAA == 9265°°CC/W SFET RAIN CUR 1 DC1s100ms K TRANSI 40 I, DD 0.1 SRINθVJGAG LS= E =9 P61oU0CVL/WSE pk), PEA 20 TA = 25oC P( 0.01 0 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 100 100 SIENT CURRENT (A) 6800 SRINθTJGAA L ==E 92 6P5°U°CCL/SWE HE CURRENT (A)10 TJ = 25oC N C RA 40 AN K T AL A V I(pk), PE 20 I, A(AS) 0 1 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 t1, TIME (sec) tAV, TIME IN AVANCHE(ms) Figure 11. Single Pulse Maximum Peak Figure 12. Unclamped Inductive Switching Current Capability FDD8447L Rev. 1.2 4 www.fairchildsemi.com FDD8447L Rev.C 4 www.fairchildsemi.com FDD8447L Rev.C 3 ww.fairchildsemi.com 3 www.fairchildsemi.com FDD8447L Rev.C 3 www.fairchildsemi.com

FDD8447L Rev.C1 4 www.fairchildsemi.com FDD8447L Rev.C 3 www.fairchildsemi.com F D D Typical Characteristics 8 4 4 7 L 4 0 E 1 V C VE AN D = 0.5 RθJA(t) = r(t) * RθJA N FFECTIRESIST 0.1 00.2.1 RθJA = 96°C/W -Ch D EAL 0.05 P(pk) a EM n LIZER 0.02 t1 n r(t), NORMAANSIENT TH 0.01 0.01 SINGLE DTuJt y- TCAy tc=2l eP, D* R =θ JtA1 (/t )t2 el Pow R T0.001 e 0.0001 0.001 0.01 0.1 1 10 100 1000 rT t1, TIME (sec) re n c Figure 13. Transient Thermal Response Curve h Thermal characterization performed using the conditions described in Note 1b. ® Transient thermal response will change depending on the circuit board design. M O S F E T FDD8447L Rev. 1.2 5 www.fairchildsemi.com FFFFFDDDDDDDDDD88888444444444477777LLLLL RRRRReeeeevvvvv.....CCCCC 33333 wwwwwwwwwwwwwww.....fffffaaaaaiiiiirrrrrccccchhhhhiiiiillllldddddssssseeeeemmmmmiiiii.....cccccooooommmmm

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