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F D D 8 4 March 2015 4 4 FDD8444 N - C ® h N-Channel PowerTrench MOSFET a n n 40V, 50A, 5.2mΩ e l P Features Applications o w (cid:132) Typ rDS(on) = 4mΩ at VGS = 10V, ID = 50A (cid:132) Automotive Engine Control er T (cid:132) Typ Qg(10) = 89nC at VGS = 10V (cid:132) Powertrain Management r e (cid:132) Low Miller Charge (cid:132) Solenoid and Motor Drivers n c h (cid:132) Low Qrr Body Diode (cid:132) Electronic Transmission ® (cid:132) UIS Capability (Single Pulse/ Repetitive Pulse) (cid:132) Distributed Power Architecture and VRMs M O (cid:132) Qualified to AEC Q101 (cid:132) Primary Switch for 12V Systems S F (cid:132) RoHS Compliant E T LEA D FREEIMPL EM E N T A NOIT ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD8444 Rev. 1.(cid:21)

F MOSFET Maximum Ratings TC = 25°C unless otherwise noted D D Symbol Parameter Ratings Units 8 4 V Drain to Source Voltage 40 V 4 DSS 4 V Gate to Source Voltage ±20 V GS N Drain Current Continuous (V = 10V) (Note 1) 145 - GS C ID Continuous (VGS = 10V, with RθJA = 52oC/W) 20 A h a Pulsed Figure 4 n E Single Pulse Avalanche Energy (Note 2) 535 mJ n AS e Power Dissipation 153 W l PD Derate above 25oC 1.02 W/oC Po T , T Operating and Storage Temperature -55 to +175 oC w J STG e Thermal Characteristics r T r e R Thermal Resistance, Junction to Case 0.98 oC/W n θJC c R Thermal Resistance, Junction to Ambient TO-252, 1in2 copper pad area 52 oC/W h θJA ® M Package Marking and Ordering Information O S Device Marking Device Package Reel Size Tape Width Quantity F E FDD8444 FDD8444 TO-252AA 13” 16mm 2500 units T Electrical Characteristics T = 25°C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B Drain to Source Breakdown Voltage I = 250μA, V = 0V 40 - - V VDSS D GS V = 32V - - 1 I Zero Gate Voltage Drain Current DS μA DSS V = 0V T = 150oC - - 250 GS J I Gate to Source Leakage Current V = ±20V - - ±100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250μA 2 2.5 4 V GS(th) GS DS D I = 50A, V = 10V - 4 5.2 D GS rDS(on) Drain to Source On Resistance ID = 50A, VGS= 10V, - 7.2 9.4 mΩ T = 175oC J Dynamic Characteristics C Input Capacitance - 6195 - pF iss V = 25V, V = 0V, C Output Capacitance DS GS - 585 - pF oss f = 1MHz C Reverse Transfer Capacitance - 332 - pF rss R Gate Resistance f = 1MHz - 1.9 - Ω G Q Total Gate Charge at 10V V = 0 to 10V - 89 116 nC g(TOT) GS Q Total Gate Charge at 5V V = 0 to 5V 43 56 nC g(5) GS V = 20V Q Threshold Gate Charge V = 0 to 2V DD - 11 14.3 nC g(TH) GS I = 50A Q Gate to Source Gate Charge D - 23 - nC gs Ig = 1.0mA Q Gate Charge Threshold to Plateau - 11 - nC gs2 Q Gate to Drain “Miller“ Charge - 20 - nC gd FDD8444 Rev. 1.(cid:21) 2 www.fairchildsemi.com

F Electrical Characteristics T = 25oC unless otherwise noted D J D 8 Symbol Parameter Test Conditions Min Typ Max Units 4 4 Switching Characteristics 4 N - t Turn-On Time - - 135 ns C on h t Turn-On Delay Time - 12 - ns d(on) a t Turn-On Rise Time VDD = 20V, ID = 50A - 78 - ns n r V = 10V, R = 2Ω n td(off) Turn-Off Delay Time GS GS - 48 - ns e l tf Turn-Off Fall Time - 15 - ns P t Turn-Off Time - - 95 ns o off w e Drain-Source Diode Characteristics r T r VSD Source to Drain Diode Voltage IISD == 5205AA -- 00..98 11.2.05 V en SD c t Reverse Recovery Time - 39 51 ns h rr I = 50A, dI /dt = 100A/μs ® Qrr Reverse Recovery Charge F F - 45 59 nC M O Notes: S 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.67mH, IAS = 40A FE T This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8444 Rev. 1.(cid:21) 3 www.fairchildsemi.com

F D Typical Characteristics D 8 4 4 4 1.2 160 MULIPLIER01..80 NT (A)112400 BCYU RPRAECNKTA LGIEMITED VGS = 10V N-Chan N E100 n DISSIPATIO00..46 RAIN CURR 6800 el Pow WER 0.2 I, DD 2400 erT O r P e 0.0 0 n 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 c h TC, CASE TEMPERATURE(oC) TC, CASE TEM PERATURE(oC) ® M Figure 1. Normalized Power Dissipation vs Case Figure 2. Maximum Continuous Drain Current vs O Temperature Case Temperature S F 2 E DUTY CYCLE - DESCENDING ORDER T 1 L A M C D THERNCE, ZJθ D = 0000....21050050 PDM ALIZEPEDA0.1 00..0021 t1t2 MM NOTES: ORI DUTY FACTOR: D = t1/t2 N PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 2000 VGS = 10V TRANSCONDUCTANCE TC = 25oC 1000 MAY LIMIT CURRENT FOR TEMPERATURES T (A) IN THIS REGION CABU ORRVEEN 2T5 oACS D FEORLALTOEW PSE:AK EN I = I25 175 - TC R 150 R U C K 100 A E P , M D I SINGLE PULSE 10 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability FDD8444 Rev. 1.(cid:21) 4 www.fairchildsemi.com

F Typical Characteristics D D 8 4 1000 500 4 If R = 0 4 T (A)100 10us NT (A)100 tItfAA RVV ==≠ ((0LL)/R(IA)lSn)[/((I1A.S3**RR)A/(T1E.3D*R BAVTDESDS -B VVDDDS)S - VDD) +1] N-C REN 100us URRE ha RN CU 10 CHE C STARTING TJ = 25oC nne , DRAID 1 CBUY RPRAECNKTA GLIEMITED 1ms LANAVA 10 STARTING TJ = 150oC l Pow I 0.11ALOIRPMEEITARE AMDTA IBOYYN B rIEDN S T(oHnIS) STTJCIN ==G M2L5EAo1 XCP0 URLASTEED 10DmCs 100 I, AS 01.01 0.1 1 10 100 1000 erTren VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) c h NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 ® Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching M Capability O S F E 100 100 T PULSE DURATION = 80μs VGS = 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX IN CURRENT (A)I, DRAD 24680000 VDD = 5V TJT =J =25 1o7C5oC TJ = -55oC I, DRAIN CURRENT (A)D24680000 VGS = 5V VVGSG S= =4 .45VV 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.3 0.6 0.9 1.2 1.5 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 14 E1.8 ID = 50A DPUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0AμXs NC PULSE DURATION = 80μs RCE )Ω12 SISTA1.6 DUTY CYCLE = 0.5% MAX N TO SOUmTANCE (108 TJ = 175oC MALIZEDCE ON-RE11..24 r, DRAIDS(on)ON-RESIS 46 TJ = 25oC NORAIN TO SOUR01..80 VIDG S= =5 01A0V 2 DR0.6 4 5 6 7 8 9 10 -80 -40 0 40 80 120 160 200 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE(oC) Figure 9. Drain to Source On-Resistance Figure 10. Normalized Drain to Source On Variation vs Gate to Source Voltage Resistance vs Junction Temperature FDD8444 Rev. 1.(cid:21) 5 www.fairchildsemi.com

F Typical Characteristics D D 8 4 4 1.2 1.15 4 1.1 VGS = VDS CE ID = 250μA N E ID = 250μA URE 1.10 -C TE AG1.0 SOAG h ZED GAD VOLT00..89 AIN TO N VOLT1.05 anne ALINORMTHRESHOL00..67 ALIZED DRREAKDOW01..9050 l Powe 0.5 RMB rT O r 0.4 N 0.90 e -80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200 n TJ, JUNCTION TEMPERATURE(oC) TJ, JUNCTION TEMPERATURE (oC) ch ® Figure 11. Normalized Gate Threshold Voltage vs Figure 12. Normalized Drain to Source M Junction Temperature Breakdown Voltage vs Junction Temperature O S F E 10000 E(V)10 ID = 50A T G A pF) Ciss OLT 8 VDD = 15V CITANCE (PA1000 Coss O SOURCE V 46 VDD = 20V VDD = 25V A T C Crss TE A 2 f = 1MHz G VGS = 0V , GS 100 V 0 0.1 1 10 40 0 20 40 60 80 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 13. Capacitance vs Drain to Source Figure 14. Gate Charge vs Gate to Source Voltage Voltage FDD8444 Rev. 1.(cid:21) 6 www.fairchildsemi.com

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