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F D D 6 March 2015 6 8 0 FDD6680AS A S 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDD6680AS is designed to replace a single • 55 A, 30 V R max= 10.5 mΩ @ V = 10 V MOSFET and Schottky diode in synchronous DC:DC DS(ON) GS R max= 13.0 mΩ @ V = 4.5 V power supplies. This 30V MOSFET is designed to DS(ON) GS maximize power conversion efficiency, providing a low R and low gate charge. The FDD6680AS • Includes SyncFET Schottky body diode DS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of • Low gate charge (21nC typical) the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the • High performance trench technology for extremely performance of the FDD6680A in parallel with a low R Schottky diode. DS(ON) Applications • High power and current handling capability • DC/DC converter . • Low side notebook D D G S G TO-252 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Unit s V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS ID Drain Current – Continuous (Note 3) 55 A – Pulsed (Note 1a) 100 PD Power Dissipation (Note 1) 60 W (Note 1a) 3.1 (Note 1b) 1.3 T, T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6680AS FDD6680AS 13’’ 16mm 2500 units ©2008 Fairchild Semiconductor Corporation FDD6680AS Rev. 1.2

F Electrical Characteristics T = 25°C unless otherwise noted D A D Symbol Parameter Test Conditions Min Typ Max Units 6 6 Drain-Source Avalanche Ratings (Note 2) 8 Single Pulse, V = 15 V, 0 WDSS Drain-Source Avalanche Energy I =13.5A DD 54 205 mJ A D S I Drain-Source Avalanche Current 13.5 A AR Off Characteristics Drain–Source Breakdown BV V = 0 V, I = 1 mA 30 V DSS Voltage GS D ∆BVDSS Breakdown Voltage Temperature ID = 1 mA, Referenced to 25°C 29 mV/°C ∆T Coefficient J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 500 µA DSS DS GS I Gate–Body Leakage V = ±20 V, V = 0 V ±100 nA GSS GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 1 mA 1 1.4 3 V GS(th) DS GS D ∆VGS(th) Gate Threshold Voltage ID = 1 mA, Referenced to 25°C –3 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = 10 V, ID = 12.5 A 8.6 10.5 mΩ On–Resistance VGS = 4.5 V, ID = 10 A 10.3 13.0 V = 10 V, I = 12.5A, T= 125°C 12.5 16.0 GS D J I On–State Drain Current V = 10 V, V = 5 V 50 A D(on) GS DS g Forward Transconductance V = 15 V, I = 12.5 A 44 S FS DS D Dynamic Characteristics V = 15 V, V = 0 V, C Input Capacitance DS GS 1200 pF iss f = 1.0 MHz C Output Capacitance 350 pF oss C Reverse Transfer Capacitance 120 pF rss RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.6 Ω Switching Characteristics (Note 2) t Turn–On Delay Time 10 20 ns d(on) tr Turn–On Rise Time VDD = 15 V, ID = 1 A, 6 12 ns t Turn–Off Delay Time V = 10 V, R = 6 Ω 28 45 ns d(off) GS GEN t Turn–Off Fall Time 12 22 ns f t Turn–On Delay Time 14 25 ns d(on) tr Turn–On Rise Time VDD = 15 V, ID = 1 A, 13 23 ns t Turn–Off Delay Time V = 4.5 V, R = 6 Ω 20 32 ns d(off) GS GEN t Turn–Off Fall Time 11 20 ns f Qg(TOT) Total Gate Charge at Vgs=10V 21 29 nC Q Total Gate Charge at Vgs=5V 11 15 nC g V = 15 V, I = 12.5 A Q Gate–Source Charge DD D 3 nC gs Q Gate–Drain Charge 4 nC gd Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current 4.4 A S VSD Drain–Source Diode Forward VGS = 0 V, IS = 4.4 A (Note 2) 0.5 0.7 V Voltage VGS = 0 V, IS = 7 A (Note 2) 0.6 t I = 12.5A, 17 nS rr Diode Reverse Recovery Time F diF/dt = 300 A/µs (Note 3) Qrr Diode Reverse Recovery Charge 11 nC FDD6680AS Rev. 1.2

F Electrical Characteristics T = 25°C unless otherwise noted D A D Notes: 6 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of 6 θJA 8 the drain pins. R is guaranteed by design while R is determined by the user's board design. θJC θCA 0 A S a) R = 40°C/W when mounted on a b) R = 96°C/W when mounted θJA θJA 1in2 pad of 2 oz copper on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% P D 3. Maximum current is calculated as: RDS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6680AS Rev. 1.2

F D Typical Characteristics D 6 6 8 0 100 2 A VGS = 10V 4.0V VGS = 3.0V S 80 NCE1.8 RRENT (A) 60 6.0V 4.5V 3.5V MALIZEDN-RESISTA1.6 I, DRAIN CUD 2400 3.0V R, NORDS(ON)RAIN-SOURCE O11..124 3.5V 4.0V 4.5V 5.0V 6.0V 10V D 2.5V 0 0.8 0 0.5 1 1.5 2 2.5 3 0 20 40 60 80 100 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.032 ID = 12.5A R, NORMALIZEDDS(ON) DRAIN-SOURCE ON-RESISTANCE011...8124 VGS =10V R, ON-RESISTANCE (OHM)DS(ON)00..000.012246 TA =25oC TA = 125oC ID = 6.3A 0.6 0.008 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 100 100 VDS = 5V VGS = 0V A) NT (A) 80 RRENT ( 10 RE 60 CU RAIN CUR 40 TA = 125oC -55oC SE DRAIN 1 TA = 125oC 25oC D R I, D 20 REVE 0.1 -55oC 25oC I, S 0 0.01 1 1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6680AS Rev. 1.2

F D Typical Characteristics (continued) D 6 6 8 0 10 1800 A f = 1MHz E (V) 8 ID = 12.5A VDS = 10V 1500 VGS = 0 V S G SOURCE VOLTA 46 15V 20V ACITANCE (pF)1920000 Ciss ATE- CAP 600 Coss G V, GS 2 300 Crss 0 0 0 5 10 15 20 25 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1000 100 W) SINGLE PULSE RENT (A) 10100 RDS(ON) LIMIT 100m10sms1ms100us NT POWER ( 6800 RθTJAA == 9265°°CC/W R E U 1s SI AIN C 1 DC10s TRAN 40 R K I, DD 0.1 SRINθVJGAG LS= E =9 P61oU0CVL/WSE pk), PEA 20 TA = 25oC P( 0.01 0 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. T 1 N SIE D = 0.5 RθJA(t) = r(t) * RθJA RANE 0.2 RθJA = 96 °C/W ORMALIZED EFFECTIVE TTHERMAL RESISTANC 00.0.11 0.01.00.5002.01 SINGLE PULSE PD(TpuJkt y- TCt1Ayt c2=l eP, *D R =θ JtA1 (/t )t2 N r(t), 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6680AS Rev. 1.2

F D Typical Characteristics (continued) D 6 6 8 SyncFET Schottky Body Diode 0 A Characteristics S Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6680AS. v di A/ 3 Schottky barrie diodes exhibit significant leakage at nt: high temperature and high reverse voltage. This will urre increase the power in the device. C 0.1 A) 10nS/div NT ( TA = 125oC E 0.01 R R U C Figure 12. FDD6680AS SyncFET body diode AGE 0.001 TA = 100oC reverse recovery characteris K A E L 0.0001 E S R Freovre crosem rpeacroisvoenr yp cuhrpaorascetse,r Fisitgicusr eo f1 t3h es hboowdsy tdhieo de REVE 0.00001 TA = 25oC of an equivalent size MOSFET produced without I, DSS SyncFET (FDD6680). 0.000001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. v di A/ nt: 3 e Curr 10nS/div Figure 13. Non-SyncFET (FDD6680) body diode reverse recovery characteristic. FDD6680AS Rev. 1.2

F D Typical Characteristics D 6 6 8 0 A L S VDS BV DSS VGS tP V RGE DUT + IAS DS V V DD DD - V 0V GS tp IAS vary t to obtain P 0.01Ω required peak I AS t AV Figure 12. Unclamped Inductive Load Test Figure 13. Unclamped Inductive Circuit Waveforms Drain Current Same type as + 50kΩ 10V - 10µF 1µF + V DD Q - G(TOT) V 10V GS DUT V Q Q GS GS GD I g(REF Charge, (nC) Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveform t ON t OFF t d(ON) t R d(OFF L VDS VDS tr ) tf 90% 90% V + GS RGEN DUT VDD 0V 10% 10% - V 90% GS VGS 50% 50% DPuultsye C Wycidleth ≤ ≤ 0 1.1µ%s 0V 10% Pulse Width Figure 16. Switching Time Test Figure 17. Switching Time Waveforms Circuit FDD6680AS Rev. 1.2

None

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