Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D D 3 N November 2013 4 0 FDD3N40 / FDU3N40 / F D TM N-Channel UniFET MOSFET U 3 400 V, 2 A, 3.4 Ω N 4 0 Features Description — • R = 3.4 Ω (Typ.) @ V = 10 V, I = 1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage N DS(on) GS D - MOSFET family based on planar stripe and DMOS technology. C • Low Gate Charge (Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to h a • Low Crss (Typ. 3.7 pF) provide better switching performance and higher avalanche n energy strength. This device family is suitable for switching n • 100% Avalanche Tested power converter applications such as power factor correction e l Applications (PFC), flat panel display (FPD) TV power, ATX and electronic U lamp ballasts. n i • LED TV F E • Consumer Appliances T T • Lighting M • Uninterruptible Power Supply M O S D F E D T G S D-PAK I-PAK G G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FDD3N40TM / FDU3N40TU Unit V Drain-Source Voltage 400 V DSS ID Drain Current - Continuous (TC = 25°C) 2.0 A - Continuous (TC = 100°C) 1.25 A I Drain Current - Pulsed (Note 1) 8.0 A DM V Gate-Source voltage ±30 V GSS E Single Pulsed Avalanche Energy (Note 2) 46 mJ AS I Avalanche Current (Note 1) 2 A AR E Repetitive Avalanche Energy (Note 1) 3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 30 W D C - Derate Above 25°C 0.24 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C L Thermal Characteristics Symbol Parameter FDD3N40TM / FDU3N40TU Unit RθJC Thermal Resistance, Junction-to-Case, Max. 4.2 °C/W RθJA Thermal Resistance, Junction to Ambient, Max. 110 °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. C3

F D Package Marking and Ordering Information D 3 N Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 4 FDD3N40TM FDD3N40 DPAK Tape and Reel 330 mm 16 mm 2500 units 0 FDU3N40TU FDU3N40 IPAK Tube N/A N/A 75 units / F D Electrical Characteristics TC = 25°C unless otherwise noted. U 3 N Symbol Parameter Conditions Min. Typ. Max Unit 4 Off Characteristics 0 — BV Drain-Source Breakdown Voltage V = 0 V, I = 250 μA 400 -- -- V DSS GS D N ΔBV Breakdown Voltage Temperature / ΔTDSS Coefficient ID = 250 μA, Referenced to 25°C -- 0.4 -- V/°C -C J h I Zero Gate Voltage Drain Current V = 400 V, V = 0 V -- -- 1 μA a DSS VDS = 320 V, TG S= 125°C -- -- 10 μA n DS C n e I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA GSSF GS DS l U I Gate-Body Leakage Current, Reverse V = -30 V, V = 0 V -- -- -100 nA GSSR GS DS n On Characteristics iF E VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V T T RDS(on) Static Drain-Source V = 10 V, I = 1 A -- 2.8 3.4 Ω M On-Resistance GS D M g Forward Transconductance V = 40 V, I = 1 A -- 2 -- S O FS DS D S Dynamic Characteristics F E C Input Capacitance V = 25 V, V = 0 V, -- 173 225 pF iss DS GS T f = 1 MHz C Output Capacitance -- 30 40 pF oss C Reverse Transfer Capacitance -- 3.7 6 pF rss Switching Characteristics t Turn-On Delay Time V = 200 V, I = 3 A, -- 10 30 ns d(on) DD D V = 10 V, R = 25 Ω t Turn-On Rise Time GS G -- 30 70 ns r t Turn-Off Delay Time -- 10 30 ns d(off) t Turn-Off Fall Time (Note 4) -- 25 60 ns f Q Total Gate Charge -- 4.5 6 nC g V = 320 V, I = 3 A, DS D Qgs Gate-Source Charge VGS = 10 V -- 1.2 -- nC Q Gate-Drain Charge (Note 4) -- 2 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 2 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 8 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 2 A -- -- 1.4 V SD GS S t Reverse Recovery Time V = 0 V, I = 3 A, -- 210 -- ns rr GS S Q Reverse Recovery Charge dIF/dt =100 A/μs -- 0.75 -- μC rr Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 20 mH, IAS = 2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2007 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. C3

F D Typical Performance Characteristics D 3 N 4 0 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics / F D U 101 101 T o p : 1 5 V.0G SV 3N 10.0 V 4 8.0 V 7.0 V 0 A] 100 66..50 VV A] — Current [ Bottom : 5.5 V Current [ 150oC N-C I, Drain D10-1 I, Drain D 25oC -55oC hann * N12..o 2Tte5Cs 0= :μ s2 5PouClse Test * N12..o V2te5DsS0 :μ=s 4 P0uVlse Test el U 10-2 100 n 10-1 100 101 4 5 6 7 8 9 10 i F V , Drain-Source Voltage [V] V , Gate-Source Voltage [V] DS GS E T Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage T M Drain Current and Gate Voltage Variation vs. Source Current M and Temperatue O S F 15 E e 14 T c n 13 a st 12 A] ΩR [], Drain-Source On-ResiDS(ON)1101123456789 VGS = 10V V*G SN o=t e2 :0 TVJ = 25oC I, Reverse Drain Current [DR111000-101 150oC 25oC * N12..o V2te5Gs0S :μ=s 0 PVulse Test 0 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 350 12 Ciss = Cgs + Cgd (Cds = shorted) 300 CCorssss == CCgdds + Cgd 10 VDS = 80V citances [pF] 122505000 CCoissss ource Voltage [V] 68 VVDDSS == 230200VV a S Cap 100 * Note : ate- 4 50 Crss 12.. Vf =GS 1 = M 0H Vz V, GGS 2 * Note : ID = 3A 0 0 10-1 100 101 0 1 2 3 4 5 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G ©2007 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. C3

F D Typical Performance Characteristics D (Continued) 3 N 4 0 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation / vs. Temperature vs. Temperature F D U 3 1.2 3.0 N e 4 ag 0 BV, (Normalized)DSSDrain-Source Breakdown Volt 011...901 * N12..o VItDeG s=S :=2 500 VμA R, (Normalized)DS(ON)Drain-Source On-Resistance 01122.....50505 * N1.o VteGsS := 10 V — N-Channel U 2. ID = 1 A n 0.8-100 -50 0 50 100 150 200 0.0 iF TJ, Junction Temperature [oC] -100 -50 T, J0unction Te50mperatur1e0 0[oC] 150 200 ET J T M Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current M vs. Case Temperature O S F E 2.5 T 101 10 μs 2.0 100 μs n Current [A] 100 Operation in This Area 1001 0m ms1s ms n Current [A] 1.5 Drai is Limited by R DS(on) DC Drai 1.0 I, D10-1 * Notes : I, D 1. TC = 25 oC 0.5 2. TJ = 150 oC 3. Single Pulse 10-2 0.0 100 101 102 25 50 75 100 125 150 V , Drain-Source Voltage [V] T, Case Temperature [oC] DS C Figure 11. Transient Thermal Response Curve W] omal Response [C/hermal Response 100 D0=00.0..012.55 PDM t1t2 Z(t), TherθJCZ(t), TθJC10-1 00..0021 single pulse * N123...o ZDTteθJusJMCt y:(-t )TF =Ca c=4t o.P2r D,o MDC *=/ WZt1θ/ JtMC2(ta)x. 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 ©2007 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. C3

F D D 3 N 4 0 / F D U 3 VV N GGSS SSaammee TTyyppee 4 5500KKΩΩ aass DDUUTT QQ 0 gg — 1122VV 220000nnFF 1100VV 330000nnFF N VV VVDDSS -C GGSS QQggss QQggdd h a n n DDUUTT e l IG = co33nmmsAAt. U n i F CChhaarrggee E T T Figure 12. Gate Charge Test Circuit & Waveform M M O S F E T VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. C3

F D D 3 N 4 0 / F D U DDUUTT ++ 3 N 4 0 VV DDSS — __ N - C h a II SSDD n LLL n e l U n DDrriivveerr i F RR E GG T SSaammee TTyyppee aass DDUUTT VVDDDD TM M VV O GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG S ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd F SSDD E T GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. C3

F D Mechanical Dimensions D 3 N 4 0 / F D U 3 N 4 0 — N - C h a n n e l U n i F E T T M M O S F E T Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 ©2007 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. C3

F D Mechanical Dimensions D 3 N 4 0 / F D U 3 N 4 0 — N - C h a n n e l U n i F E T T M M O S F E T Figure 17. TO-251 (I-PAK), Molded, 3-Lead, Option AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT251-003 ©2007 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. C3

F D D 3 N 4 0 / F TRADEMARKS D The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not U intended to be an exhaustive list of all such trademarks. 3 AccuPower™ F-PFS™ Sync-Lock™ N AX-CAP®* FRFET® ® ®* 4 BitSiC™ Global Power ResourceSM PowtmerTrench® 0 Build it Now™ GreenBridge™ PowerXS™ TinyBoost® — CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TinyBuck® N CROSSVOLT™ Gmax™ QS™ TTiinnyyCLoaglcic™® -C CTL™ GTO™ Quiet Series™ TINYOPTO™ h CDuErUreXnPt ETEraDn®sfer Logic™ IISntOelPliMLAANXA™R™ Rapid™Configure™ TTiinnyyPPoWwMe™r™ an Dual Cool™ Marking Small Speakers Sound Louder n EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ e EEfSfiBceC®n™tMax™ MMMMiieIccCgrrRooaPFBOEauCkcTO™k™™UPLER™ SSSSimMoglnuaAtarRitolMWTna siSsx feT™o™Ar RYTou™r Success™ TTTμSrrRaiFeUnarSEDuCielCt sUD™™ReRteEctN™T®* l UniF Fairchild® MicroPak2™ SPM® E FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® TT FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ M FAST® OptoHiT™ SuperSOT™-6 UniFET™ M FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ O FFPESTB™ench™ OPTOPLANAR® SSuynpcreFMETO™S® VVXoiSsl™utaaglMePalxu™s™ SF E T *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2007 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. C3

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