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F D D 3 8 September 2016 6 0 FDD3860 N - C N-Channel PowerTrench® MOSFET h a 100 V, 29 A, 36 mΩ n n e Features General Description l P (cid:132) Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is rugged gate version of Fairchild o Semiconductor‘s advanced Power Trench® process. This part is w (cid:132) High Performance Trench Technology for Extremely Low tailored for low r and low Qg figure of merit, with avalanche e r DS(on) r DS(on) ruggedness for a wide range of switching applications. T r (cid:132) 100% UIL Tested e Applications n (cid:132) RoHS Compliant c (cid:132) DC-AC Conversion h ® (cid:132) Synchronous Rectifier M O S F E T D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25°C 29 C I -Continuous T = 25°C (Note 1a) 6.2 A D A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25°C 83 P C W D Power Dissipation T = 25°C (Note 1a) 3.75 A T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD3860 FDD3860 D-PAK (TO-252) 13’’ 16 mm 2500 units ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD3860 Rev.1.3

F D Electrical Characteristics D T = 25°C unless otherwise noted. J 3 8 Symbol Parameter Test Conditions Min. Typ. Max. Units 6 0 Off Characteristics N - BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 100 V C h ΔBV Breakdown Voltage Temperature DSS I = 250μA, referenced to 25°C 98 mV/°C a ΔTJ Coefficient D n n I Zero Gate Voltage Drain Current V = 80V, V = 0V 1 μA DSS DS GS e IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA l P o On Characteristics w e VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2.5 3.8 4.5 V r T Δ ΔVTGS(th) GTeamtep teor aStuoruer cCeo Tehffriceisehnotld Voltage ID = 250μA, referenced to 25°C -11.4 mV/°C re J n V = 10V, I = 5.9A 29 36 c r Static Drain to Source On Resistance GS D mΩ h DS(on) VGS = 10V, ID = 5.9A, TJ = 125°C 51 64 ® g Forward Transconductance V = 10V, I = 5.9A 20 S M FS DS D O Dynamic Characteristics S F C Input Capacitance 1310 1740 pF E iss C Output Capacitance VDS = 50V, VGS = 0V, 100 130 pF T oss f = 1MHz C Reverse Transfer Capacitance 45 70 pF rss R Gate Resistance f = 1MHz 1.6 Ω g Switching Characteristics t Turn-On Delay Time 16 29 ns d(on) V = 50V, I = 5.9A, t Rise Time DD D 10 21 ns r V = 10V, R = 6Ω t Turn-Off Delay Time GS GEN 24 39 ns d(off) t Fall Time 7 15 ns f Q Total Gate Charge at 10V 22 31 nC g V = 50V, I = 5.9A Q Gate to Source Charge DD D 7.1 nC gs Q Gate to Drain “Miller” Charge 6.3 nC gd Drain-Source Diode Characteristics V = 0V, I = 2.0A (Note 2) 0.7 1.2 V Source to Drain Diode Forward Voltage GS S V SD V = 0V, I = 5.9A (Note 2) 0.8 1.3 GS S t Reverse Recovery Time 34 55 ns rr I = 5.9A, di/dt = 100A/μs Q Reverse Recovery Charge F 40 64 nC rr Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40°C/W when mounted on a b) 96°C/W when mounted 1 in2 pad of 2 oz copper on a minimum pad. 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V. ©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDD3860 Rev.1.3

F D Typical Characteristics D TJ = 25°C unless otherwise noted. 3 8 6 60 3.0 0 PULSE DURATION = 80μs E PULSE DURATION = 80μs N A) 50 VGS = 10V DUTY CYCLE = 0.5%MAX ANC 2.5 DUTY CYCLE = 0.5%MAX -C AIN CURRENT ( 3400 VGS = 8V VGS = 7V ORMALIZED URCE ON-RESIST 12..50 VGS = 6V VGS = 7V VGS = 8V hannel Po DR 20 NSO w I, D 100 VGS = 6V DRAIN TO 01..50 VGS = 10V erTren 0 1 2 3 4 5 0 10 20 30 40 50 60 c h VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURR ENT (A) ® Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance M vs. Drain Current and Gate Voltage O S F E 2.2 100 T ANCE 2.0 IVDG =S 5=. 91A0V )mΩ 80 ID = 5.9A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AμXs NORMALIZED TO SOURCE ON-RESIST 011111......802468 , rDRAIN TO DS(on) (RCE ON-RESISTANCE 246000 TJ = 25oTCJ = 125oC AIN 0.6 SOU R D 0.4 0 -75 -50 -25 0 25 50 75 100 125 150 5 6 7 8 9 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOUR CE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs. Gate to vs. Junction Temperature Source Voltage 60 PULSE DURATION = 80μs 100 DUTY CYCLE = 0.5%MAX 50 A) VGS = 0V NT (A) 40 VDS = 10V RRENT ( 10 RRE 30 N CU 1 TJ = 150oC AIN CU 20 TJ = 150oC E DRAI 0.1 TJ = 25oC DR TJ = 25oC RS , ID 10 TJ = -55oC , REVES0.01 TJ = -55oC 0 I 2 4 6 8 10 1E-3 VGS, GATE TO SOU RCE VOLTAGE (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current ©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDD3860 Rev.1.3

F D Typical Characteristics D T = 25°C unless otherwise noted. J 3 8 6 10 3000 0 V) ID = 5.9A VDD = 25V N E( -C AG 8 1000 Ciss h CE VOLT 6 VDD = 50V VDD = 75V CE (pF) Coss anne ATE TO SOUR 24 CAPACITAN 100 f = 1MHz Crss l Power , GS VGS = 0V Tr G e V 0 10 n 0 5 10 15 20 25 0.1 1 10 100 c Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) h® Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain M to Source Voltage O S F 10 35 E 8 T ENT(A) 6 NT (A) 28 VGS = 10V R E R 4 R 21 U R C U HE TJ = 125oC TJ = 25oC N C NC AI 14 AVALA 2 , IDRD 7 RθJC = 1.8oC/W , S A I 1 0 0.01 0.1 1 10 100 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs. Case Temperature 100 105 W) V = 10V R ( GS T (A) OWE 104 N 10 P CURRE 100us SIENT 103 SRIθNJCG =L E1 .P8oUCL/SWE N AN AI R DR 1 SINGLE PULSE 1ms K T I, D TLIHMISIT AERDE BAY I Srds(on) TRJθ J=C M =A 1X. 8RoACT/WED 1D0Cms , PEA)K 102 TC = 25oC P(P 0.1 10 0.1 1 10 100 300 10-6 10-5 10-4 10-3 10-2 10-1 1 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDT H (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Power Dissipation Operating Area ©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDD3860 Rev.1.3

F D Typical Characteristics D T = 25°C unless otherwise noted. J 3 8 6 2 0 1 N DUTY CYCLE-DESCENDING ORDER - C L D = 0.5 h ORMALIZED THERMAIMPEDANCE, ZJCθ 0.00.11 00000.....21000521 NOTES: FACOUBI =RRO RVIT2EE5EP N M2DT5PM oAEC1--RS-- 5-D- A-0-F1-E-T-O2-–-tUR--51-LT--AR-L-TtC-T-E2-O-CESW =PS E2:A5KoC annel Powe N SINGLE PULSE DUTY FACTOR: D = t1/t2 rT R = 1.8oC/W PEAK TJ = PDM x ZθJC x RθJC + TC r θJC e n 0.001 c 10-6 10-5 10-4 10-3 10-2 10-1 1 h ® t, RECTANGULAR PULSE DURATION (sec) M Figure 13. Transient Thermal Response Curve O S F 2 E 1 DUTY CYCLE-DESCENDING ORDER T AL D = 0.5 ERMZJAθ 0.1 00..21 ALIZED TH PEDANCE, 000...000521 PDM t1 NORMIM 0.01 SRIθNJAG =L E4 0PoUCL/WSE NDOUTTYE SF:ACTOR: D = t1/t2 t2 (Note 1a) PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 10-4 10-3 10-2 10-1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve 2 1 DUTY CYCLE-DESCENDING ORDER ERMAL ZJAθ 0.1 D = 000...215 ALIZED TH PEDANCE, 0.01 000...000521 PDM t1 MM RI SINGLE PULSE t2 NO 0.001 R = 96oC/W NOTES: θJA DUTY FACTOR: D = t1/t2 (Note 1b) PEAK TJ = PDM x ZθJA x RθJA + TA 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 15. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDD3860 Rev.1.3

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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I77 ©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDD3860 Rev.1.3

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