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F D D 3 5 1 March 2015 0 FDD3510H H D u ® Dual N & P-Channel PowerTrench MOSFET a l N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ N & Features General Description P - C Q1: N-Channel These dual N and P-Channel enhancement mode Pow er h a (cid:132) Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs ar e produ ced u sing Fa irchild Semiconductor ’s n advanced PowerTrench® process that has been especially n (cid:132) Max r = 88mΩ at V = 6V, I = 4.1A e DS(on) GS D tailored to minimize on -state resistance and yet maint ain l P Q2: P-Channel superior switching performance. o (cid:132) Max r = 190mΩ at V = -10V, I = -2.8A w DS(on) GS D Applications e (cid:132) Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A rT (cid:132) Inverter r (cid:132) 100% UIL Tested e n (cid:132) H-Bridge c (cid:132) RoHS Compliant h ® M O D1 D2 S F D1/D2 E T G1 G2 G2 S2 G1 S1 S1 S2 Dual DPAK 4L N-Channel P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 80 -80 V DS V Gate to Source Voltage ±20 ±20 V GS Drain Current - Continuous T = 25°C 13.9 -9.4 C I - Continuous T = 25°C 4.3 -2.8 A D A - Pulsed 20 -10 Power Dissipation for Single Operation T = 25°C (Note 1) 35 32 C P T = 25°C (Note 1a) 3.1 W D A T = 25°C (Note 1b) 1.3 A E Single Pulse Avalanche Energy (Note 3) 37 54 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics RθJC Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 3.5 °C/W RθJC Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.9 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD3510H FDD3510H TO-252-4L 13” 16mm 2500 units ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD3510H Rev. 1.4

F D Electrical Characteristics D T = 25°C unless otherwise noted J 3 5 Symbol Parameter Test Conditions Type Min Typ Max Units 1 0 Off Characteristics H D I =250µA, V = 0V Q1 80 BV Drain to Source Breakdown Voltage D GS V u DSS ID = -250µA, VGS = 0V Q2 -80 a l ∆BVDSS Breakdown Voltage Temperature ID = 250µA, referenced to 25°C Q1 84 mV /°C N ∆TJ Coefficient ID = -250µA, referenced to 25°C Q2 -67 & I Zero Gate Voltage Drain Current VDS = 64V, VGS = 0V Q1 1 µA P DSS VDS = -64V, VGS = 0V Q2 -1 - C Q1 ±100 nA I Gate to Source Leakage Current V = ±20V, V = 0V h GSS GS DS Q2 ±100 nA a n n On Characteristics e l V Gate to Source Threshold Voltage VGS = VDS, ID = 250µA Q1 2.0 2.6 4.0 V P GS(th) V = V , I = -250µA Q2 -1.0 -1.6 -3.0 o GS DS D w ∆V Gate to Source Threshold Voltage I = 250µA, referenced to 25°C Q1 -6.7 GS(th) D mV/°C e ∆TJ Temperature Coefficient ID = -250µA, referenced to 25°C Q2 4.6 rT VGS = 10V, ID = 4.3A 64 80 re VGS = 6.0V, ID = 4.1A Q1 70 88 n V = 10V, I = 4.3A, T = 125°C 121 152 c r Static Drain to Source On Resistance GS D J mΩ h DS(on) V = -10V, I = -2.8A 153 190 GS D ® VGS = -4.5V, ID = -2.6A Q2 184 224 M V = -10V, I = -2.8A, T = 125°C 259 322 GS D J O g Forward Transconductance VDD = 10V, ID = 4.3A Q1 15 S S FS VDD = -5V, ID = -2.8A Q2 6.8 F E Dynamic Characteristics T C Input Capacitance Q1 Q1 600 800 pF iss V = 40V, V = 0V, f = 1MHZ Q2 660 880 DS GS Q1 56 75 C Output Capacitance pF oss Q2 Q2 50 70 VDS = -40V, VGS = 0V, f = 1MHZ Q1 27 41 C Reverse Transfer Capacitance pF rss Q2 25 40 Q1 1.7 R Gate Resistance f = 1MHz Ω g Q2 7.2 Switching Characteristics Q1 7 13 td(on) Turn-On Delay Time Q1 Q2 6 11 ns V = 40V, I = 4.3A, DD D Q1 2 10 tr Rise Time VGS = 10V, RGEN = 6Ω Q2 3 10 ns Q1 16 29 t Turn-Off Delay Time Q2 ns d(off) Q2 25 40 V = -40V, I = -2.8A, DD D tf Fall Time VGS = -10V, RGEN = 6Ω QQ12 25 1100 ns Q1 13 18 Qg(TOT) Total Gate Charge Q1 Q2 14 20 nC V = 10V, V = 40V, I = 4.3A GS DD D Q1 2.3 Q Gate to Source Charge nC gs Q2 1.9 Q2 Q1 3.2 Qgd Gate to Drain “Miller” Charge VGS = -10V, VDD = -40V, ID = -2.8A Q2 2.9 nC FDD3510H Rev. 1.4 2 www.fairchildsemi.com

F Electrical Characteristics D T = 25°C unless otherwise noted J D Symbol Parameter Test Conditions Type Min Typ Max Units 3 5 1 Drain-Source Diode Characteristics 0 H V Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.6A (Note 2) Q1 0.8 1.2 V D SD V = 0V, I = -2.6A (Note 2) Q2 -0.8 -1.2 GS S u Q1 Q1 29 46 a t Reverse Recovery Time ns l rr IF = 4.3A, di/dt = 100A/s Q2 30 48 N Q2 Q1 28 45 & Q Reverse Recovery Charge nC rr IF = -2.8A, di/dt = 100A/s Q2 30 48 P - C Notes: h 1 . RbyθJ Ath ies udseeter'rsm binoeadrd w ditehs tighne. device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined an n e l Q1 a. 40°C/W when mounted on b. 96°C/W when mounted on a P a 1 in2 pad of 2 oz copper minimum pad of 2 oz copper o w e r T r e n c h Scale 1 : 1 on letter size paper ® M O a. 40°C/W when mounted on Q2 a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a S minimum pad of 2 oz copper F E T Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, N-ch: L = 3mH, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mH, IAS = -6A, VDD = -80V, VGS = -10V. FDD3510H Rev. 1.4 3 www.fairchildsemi.com

F D D 3 Typical Characteristics (Q1 N-Channel) 5 TJ = 25°C unless otherwise noted 1 0 H 20 4.0 D CURRENT (A) 1105 VGS = 10V VGS = 6PDVUULTSYE C DYUCRLEA T=VI OXGN%S =M= 4AX.Xµ5sV MALIZEDCE ON-RESISTANCE 2233....0505 VGS = 3.5V VGS = 4VPDUULTVSYGE CS D Y=UC 4RL.5EAV T=I O0.N5 %= M80AµXs ual N & P-C RAIN D 5 VGS = 4V NORO SOUR 1.5 VGS = 6V han , ID 0 VGS = 3.5V DRAIN T 01..50 VGS = 10V nel Po 0 1 2 3 4 0 5 10 15 20 w VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CURR ENT(A) e r T Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance r vs Drain Current and Gate Voltage e n c h 2.2 300 ® TANCE 12..80 IVDG =S 4=. 31A0V ()mΩ ID = 4.3A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs MO NORMALIZEDTO SOURCE ON-RESIS 01111.....80246 rDRAIN TO ,DS(on)RCE ON-RESISTANCE 120000 TJ = 125oC SFET AIN 0.6 SOU TJ = 25oC R D 0.4 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 20 20 PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs T (A) 10 VGS = 0V N T (A) 15 VDS = 5V URRE 1 TJ = 150oC RREN 10 AIN C TJ = 25oC U R 0.1 N C TJ = 150oC E D AI TJ = 25oC RS , DRD 5 REVE 0.01 TJ = -55oC I TJ = -55oC , S I 0 0.001 2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD3510H Rev. 1.4 4 www.fairchildsemi.com

F D Typical Characteristics (Q1 N-Channel) D T = 25°C unless otherwise noted J 3 5 1 10 1000 0 H GE(V) 8 ID = 4.3A Ciss D A u E VOLT 6 VDD = 40V E (pF) al N C C SOUR 4 VDD = 30V VDD = 50V CITAN 100 Coss & P E TO CAPA -Ch AT 2 f = 1MHz a , GS VGS = 0V Crss nn G V 0 10 e 0 2 4 6 8 10 12 14 0.1 1 10 100 l P Qg, GATE CH ARGE(nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) o w Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain e r to Source Voltage T r e n 5 15 c h 4 URRENT(A) 3 TJ = 25oC RRENT (A) 129 VGS = 10V MOS® E C CU VGS = 6V FE NCH 2 N AI 6 T LA TJ = 125oC DR AVA , ID 3 I, AS RθJC = 3.5oC/W 1 0 0.01 0.1 1 10 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE(ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 50 105 W) VGS = 10V RENT (A) 10 100us T POWER ( 104 R N , DRAIN CUD 1 TLIHMISIT AERDE BAY I SrD S(TSonJIN )=G MLAEX P RUALSTEED 110mmss AK TRANSIE 110023 SRTCIθNJ =CG 2=L5 E3o C.P5oUCL/SWE I 0.1 TRCθJ =C 2=5 3oC.5oC/W 1D0C0ms , PE)PK 0.05 P( 10 0.5 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 1 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WIDT H (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation FDD3510H Rev. 1.4 5 www.fairchildsemi.com

F D Typical Characteristics (Q1 N-Channel) D T = 25°C unless otherwise noted J 3 5 1 2 0 H 1 DUTY CYCLE-DESCENDING ORDER D u AL D = 0.5 a ALIZED THERM ZPEDANCE,JCθ 0.1 00000.....21000521 PDM t1 l N & P-C ORMIM 0.01 NOTES: t2 ha N SINGLE PULSE DUTY FACTOR: D = t1/t2 n RθJC = 3.5oC/W PEAK TJ = PDM x ZθJC x RθJc + TC ne l 0.001 P 10-6 10-5 10-4 10-3 10-2 10-1 1 o w t, RECTANGULAR PULSE DURATION (sec) e r Figure 13. Transient Thermal Response Curve T r e n 2 c h 1 DUTY CYCLE-DESCENDING ORDER ® M L D = 0.5 A O M A 0.2 LIZED THER EDANCE,ZθJ 0.1 0000....1000521 PDM SFET MAORIMP 0.01 SINGLE PULSE t1t2 N R = 96oC/W NOTES: (NθJoAte 1b) DPEUATYK FTAJ C= TPODRM: xD Z =θ JtA1 /xt2 RθJA + TA 0.001 10-4 10-3 10-2 10-1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve FDD3510H Rev.1 .4 6 www.fairchildsemi.com

F D Typical Characteristics (Q2 P-Channel) D T = 25°C unless otherwise noted J 3 5 1 10 2.5 0 VGS = -10V VGS = -4.5V NCE VGS = -2.5V H D URRENT (A) 68 PDUULTSYE C DYUCRLEA T=I VO0G.N5S % == M 8-30A.µX5sV ALIZEDE ON-RESISTA 12..50 VGS = -3V VGS = -3.5V ual N & RAIN C 4 VGS = -3V NORMSOURC VGS = -4.5V P-C , -IDD 2 N TO 1.0 PULSE DURATION = 80µs VGS = -10V han 0 VGS = -2.5V DRAI 0.5 DUTY CYCLE = 0.5%MAX ne l 0 1 2 3 4 5 0 2 4 6 8 10 P -VDS, DRAIN TO SO URCE VOLTAGE (V) -ID, DRAIN CUR RENT(A) o w Figure 15. On- Region Characteristics Figure 16. Normalized on-Resistance vs Drain e r Current and Gate Voltage T r e n 2.0 600 ch SISTANCE 11..68 IVDG =S -=2 .-81A0V ()EmΩ500 ID = -2.8A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs MO® NORMALIZED AIN TO SOURCE ON-RE 00111.....68024 , rDRAIN TO DS(on) OURCE ON-RESISTANC234000000 TJ = 125oC SFET DR 0.4 S100 TJ = 25oC -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) -VGS, GATE TO SOU RCE VOLTAGE (V) Figure 17. Normalized On-Resistance Figure 18. On-Resistance vs Gate to vs Junction Temperature Source Voltage 10 10 PULSE DURATION = 80µs A) VGS = 0V DUTY CYCLE = 0.5%MAX T ( 8 N E URRENT (A) 6 VDS = -5V IN CURRRA 0.11 TJ = 150oC TJ = 25oC C D N 4 E RAI TJ = 150oC ERS D V 0.01 , D 2 RE -I TJ = 25oC , S TJ = -55oC TJ = -55oC -I 0 0.001 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SO URCE VOLTAGE (V) -VSD, BODY DIODE FO RWARD VOLTAGE (V) Figure 19. Transfer Characteristics Figure 20. Source to Drain Diode Forward Voltage vs Source Current FDD3510H Rev. 1.4 7 www.fairchildsemi.com

F D D Typical Characteristics (Q2 P-Channel) 3 T = 25°C unless otherwise noted J 5 1 0 10 1000 H E(V) ID = -2.8A D E VOLTAG 68 VDD = -40V E (pF) Ciss ual N C C & OUR VDD = -30V VDD = -50V TAN 100 Coss P O S 4 ACI -C ATE T 2 CAP f = 1MHz han , GGS VGS = 0V Crss ne -V 0 10 l 0 2 4 6 8 10 12 14 16 0.1 1 10 100 P o Qg, GATE CH ARGE(nC) -VDS, DRAIN TO SOU RCE VOLTAGE (V) w e Figure 21. Gate Charge Characteristics Figure 22. Capacitance vs Drain r T to Source Voltage r e n 4 10 c h ® ENT(A) 3 (A)NT 8 VGS = -10V MO R E S UR TJ = 25oC RR 6 F E C 2 CU VGS = -4.5V E AVALANCHI,-AS TJ = 125oC , -IDRAIN D 24 RθJC = 3.9oC/W T 1 0 0.1 1 10 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE(ms) TC, CASE TEMPERATURE (oC) Figure 23. Unclamped Inductive Figure 24. Maximum Continuous Drain Switching Capability Current vs Case Temperature 20 20000 A) 10 ER (W)10000 VGS = -10V FAOBRO VTEE M25PoECR DAETURARTEES PEAK ENT ( 100us POW CURRSEINNTG ALSEX FP–OUTLLLSOEWS: URR 1ms ENT 1000 I = I2R5 θJC = -3---.-1-9---2-o--5-C----x/--W -I, DRAIN CD 1 TLIHMISIT AERDE BAY I Srds(SToJnIN )=G MLAEX P RUALTSEED 11000mmss EAK TRANSI 100 TX = 25oC 0.00.51 RTCθJ =C 2=5 3o.C9oC/W DC P, P()PK 10 1 10 100 200 10-6 10-5 10-4 10-3 10-2 10-1 1 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WID TH (s) Figure 25. Forward Bias Safe Figure 26. Single Pulse Maximum Power Operating Area Dissipation FDD3510H Rev. 1.4 8 www.fairchildsemi.com

F D D Typical Characteristics (Q2 P-Channel) T = 25°C unless otherwise noted 3 J 5 1 0 2 H 1 DUTY CYCLE-DESCENDING ORDER D u ORMALIZED THERMAL IMPEDANCE, ZJCθ 0.00.11 D = 000000......210005521 NOTES: PDM t1t2 al N & P-Chan N DUTY FACTOR: D = t1/t2 n SINGLE PULSE PEAK TJ = PDM x ZθJC x RθJC + TC e RθJC = 3.9oC/W l P 0.001 o 10-6 10-5 10-4 10-3 10-2 10-1 1 w t, RECTANGULAR PULSE DURATION (s) e r T Figure 27. Transient Thermal Response Curve r e n c 2 h 1 DUTY CYCLE-DESCENDING ORDER ® M L D = 0.5 O D THERMA NCE,ZθJA 0.1 0000....210052 PDM SFET LIZEEDA 0.01 ORMAIMP 0.01 SINGLE PULSE t1t2 N R = 96oC/W NOTES: θJA DUTY FACTOR: D = t1/t2 (Note 1b) PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 10-4 10-3 10-2 10-1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 28. Transient Thermal Response Curve FDD3510H Rev. 1.4 9 www.fairchildsemi.com

6.73 A 6.35 6.00MIN 5.46 1.25 5.21 1.15 B 0.10 M C A B 6.50MIN 6.22 6.25 5.97 1.01 0.64 3.00MIN 1 5 1.14 0.68 0.81 0.80MIN F 0.61 4.56 0.70 0.55 1.14 0.10 M C A B 4.56 C 2.39 SEE 2.18 4.32MIN 0.61 NOTE D 0.46 5.21MIN 10.41 9.40 SEE DETAIL "A" 5 1 0.10 C NOTES: UNLESS OTHERWISE SPECIFED 0.51 A. THIS PACKAGE CONFORMS TO JEDEC, TO252 GAGE PLANE 0.127MAX VARIATION AD. SEATING PLANE B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D. HEATSINK TOP EDGE COULD BE IN CHAMFERED 1.78 CORNERS OR EDGE PROTRUSION. 1.40 E. DIMENSIONS AND TOLERANCES AS PER ASME (2.82) F Y14.5-2009. F EXCEPTION TO TO-252 STANDARD. G. FILE NAME: TO252B05REV3 H. FAIRCHILDSEMICONDUCTOR 0-10° 0.61 0.46 DETAIL A SCALE 2:1

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