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F D April 2001 C 6 4 5 N FDC645N  N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 5.5 A, 30 V. R = 30 mΩ @ V = 4.5 V specifically to improve the overall efficiency of DC/DC DS(ON) GS R = 26 mΩ @ V = 10 V converters using either synchronous or conventional DS(ON) GS switching PWM controllers. It has been optimized for low gate charge, low R and fast switching speed. • High performance trench technology for extremely DS(ON) low R DS(ON) Applications • Low gate charge (13 nC typical) • DC/DC converter • High power and current handling capability S D 1 6 D 2 5 G D 3 4 SuperSOT T M-6 D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) 5.5 A – Pulsed 20 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .645 FDC645N 7’’ 8mm 3000 units 2000 Fairchild Semiconductor Corporation FDC645N Rev C(W)

F D Electrical Characteristics T = 25°C unless otherwise noted C A 6 Symbol Parameter Test Conditions Min Typ Max Units 4 5 N Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS Breakdown Voltage Temperature I = 250 µA, Referenced to 25°C 22 mV/°C ∆T Coefficient D J IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA I Gate–Body Leakage, Forward V = 12 V, V = 0 V 100 nA GSSF GS DS I Gate–Body Leakage, Reverse V = –12 V, V = 0 V –100 nA GSSR GS DS On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.8 1.4 2 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C – 4 mV/°C ∆T Temperature Coefficient J V = 4.5 V, I = 5.5 A 25 30 Static Drain–Source GS D mΩ RDS(on) On–Resistance VVGS == 41.05 VV,, IID == 65..25 AA , T =125°C 2334 2468 GS D J I On–State Drain Current V = 4.5 V, V = 5 V 20 A D(on) GS DS g Forward Transconductance V = 10 V, I = 5.5 A 33 S FS DS D Dynamic Characteristics Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 1460 pF C Output Capacitance f = 1.0 MHz 227 pF oss C Reverse Transfer Capacitance 96 pF rss Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDS = 15 V, ID = 1 A, 8 16 ns V = 4.5 V, R = 6 Ω t Turn–On Rise Time GS GEN 9 18 ns r t Turn–Off Delay Time 35 56 ns d(off) t Turn–Off Fall Time 7 14 ns f Qg Total Gate Charge VDS = 15 V, ID = 6.2 A, 13 21 nC V = 4.5 V Q Gate–Source Charge GS 3.6 nC gs Q Gate–Drain Charge 3.6 nC gd Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current 1.3 A S VSD DVoraltiang–eS ource Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) 0.7 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC645N Rev C(W)

F D Typical Characteristics C 20 1.4 6 VGS = 10V CE 45 4.5V 3.5V AN N I, DRAIN CURRENT (A)D11055 3.0V2.5V R, NORMALIZEDDS(ON)AIN-SOURCE ON-RESIST1.12 VGS = 3.0V 3.5V 4.0V 4.5V 5.0V6.0V 10V R D 2.0V 0 0.8 0 0.5 1 1.5 2 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.07 E ID = 5.5A ID = 3.75 A NC VGS = 4.5V M) 0.06 A1.4 H ORMALIZEDE ON-RESIST1.2 SISTANCE (O 00..0045 TA = 125oC NC E R, DS(ON)DRAIN-SOUR0.81 R, ON-RDS(ON)00..0023 TA = 25oC 0.6 0.01 -50 -25 0 25 50 75 100 125 150 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with withTemperature. Gate-to-Source Voltage. 30 100 NT (A) 2205 VDS = 5V TA = -55oC 125oC25oC URRENT (A) 101 VGS = 0V TA = 125oC 25oC E C CURR 15 RAIN 0.1 -55oC I, DRAIN D105 I, REVERSE DS 0.00.0011 0.0001 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC645N Rev C(W)

F D Typical Characteristics C 6 4 5 N 10 2400 f = 1MHz GE (V) 8 ID = 5.5A VDS = 5V 10V 2000 VGS = 0 V E-SOURCE VOLTA 46 1V5 APACITANCE (pF)11268000000 CISS AT C V, GGS 2 400 COSS CRSS 0 0 0 5 10 15 20 25 30 0 5 10 15 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 5 W) CURRENT (A) 101 RDS(ON) LIMIT 10s1s100m1s0ms1ms100µs NSIENT POWER (34 SRIθNJTAG A=L = E1 25 P56U°°CCLS/WE I, DRAIN D 0.1 SRIθNVJTAGG A=SL = E=1 2 5P456.Uoo5CCLVS/WE DC P(pk), PEAK TRA12 0.01 0 0.1 1 10 100 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 E C E N D = 0.5 VA FFECTIRESIST 0.1 0.02.1 RRθJθAJ(At )= = 1 r5(t6)° +C /RWθJA ALIZED EHERMAL 0.00.500.201 P(pk) t1 RMT T 0.01 t2 r(t), NOANSIEN SINGLE PULSE DTuJt y- TCAy c=l eP, D* R =θ JtA1 (/t )t2 R T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, TIME (sec) 1 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC645N Rev C(W)

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST PACMAN™ SuperSOT™-3 Bottomless™ FASTr™ POP™ SuperSOT™-6 CoolFET™ GlobalOptoisolator™ PowerTrench SuperSOT™-8 CROSSVOLT™ GTO™ QFET™ SyncFET™ DenseTrench™ HiSeC™ QS™ TinyLogic™ DOME™ ISOPLANAR™ QT Optoelectronics™ UHC™ EcoSPARK™ LittleFET™ Quiet Series™ UltraFET E2CMOSTM MicroFET™ SILENT SWITCHER VCX™ EnSignaTM MICROWIRE™ SMART START™ FACT™ OPTOLOGIC™ Star* Power™ FACT Quiet Series™ OPTOPLANAR™ Stealth™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1

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