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F D January 2006 B 8 4 4 5 N - FDB8445 C h a n ® N-Channel PowerTrench MOSFET n e l 40V, 70A, 9mΩ P o w Features Applications e r T (cid:132) Typ rDS(on) = 6.8mΩ at VGS = 10V, ID = 70A (cid:132) Automotive Engine Control re n (cid:132) Typ Qg(10) = 44nC at VGS = 10V (cid:132) Powertrain Management c h (cid:132) Low Miller Charge (cid:132) Solenoid and Motor Drivers ® M (cid:132) Low Q Body Diode (cid:132) Electronic Transmission O rr S (cid:132) UIS Capability (Single Pulse/ Repetitive Pulse) (cid:132) Distributed Power Architecture and VRMs F E (cid:132) Qualified to AEC Q101 (cid:132) Primary Switch for 12V Systems T (cid:132) RoHS Compliant LEA D FREEIMPL EM E N T A NOIT D GATE G SOURCE DRAIN TO-263AB (FLANGE) FDB SERIES S ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB8445 Rev A1 (W)

F Absolute Maximum Ratings TC = 25°C unless otherwise noted D B Symbol Parameter Ratings Units 8 4 VDSS Drain to Source Voltage 40 V 4 V Gate to Source Voltage ±20 V 5 GS N Drain Current Continuous (V = 10V) (Note 1) 70 A ID Pulsed GS Figure 4 -C h E Single Pulse Avalanche Energy (Note 2) 102 mJ a AS n Power Dissipation 92 W n P D Derate above 25oC 0.6 W/oC e l T , T Operating and Storage Temperature -55 to +175 oC P J STG o w Thermal Characteristics e r T RθJC Thermal Resistance, Junction to Case 1.63 oC/W r e RθJA Tarheearmal Resistance, Junction to Ambient TO-263, 1in2 copper pad 43 oC/W nc h ® Package Marking and Ordering Information M O Device Marking Device Package Reel Size Tape Width Quantity S FDB8445 FDB8445 TO-263AB 330mm 24mm 800 units F E T Electrical Characteristics T = 25°C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B Drain to Source Breakdown Voltage I = 250µA, V = 0V 40 - - V VDSS D GS V = 32V - - 1 µA I Zero Gate Voltage Drain Current DS DSS VGS = 0V TJ =150°C - - 250 µA I Gate to Source Leakage Current V = ±20V - - ±100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250µA 2 2.5 4 V GS(th) DS GS D I = 70A, V = 10V - 6.8 9 D GS rDS(on) Drain to Source On Resistance ID = 70A, VGS = 10V, - 13 17.2 mΩ T = 175°C J Dynamic Characteristics C Input Capacitance - 2860 3805 pF iss V = 25V, V = 0V, C Output Capacitance DS GS - 295 395 pF oss f = 1MHz C Reverse Transfer Capacitance - 180 270 pF rss R Gate Resistance f = 1MHz - 1.95 - W G Q Total Gate Charge at 10V V = 0 to 10V - 44 62 nC g(TOT) GS Qg(TH) Threshold Gate Charge VGS = 0 to 2V VDS= 20V, - 2.9 4.1 nC Q Gate to Source Gate Charge I = 70A, - 11 - nC gs D Q Gate Charge Threshold to Plateau - 8.2 - nC gs2 Q Gate to Drain Charge - 11 - nC gd 2 www.fairchildsemi.com FDB8445 Rev A1 (W)

F Electrical Characteristics T = 25°C unless otherwise noted D J B Symbol Parameter Test Conditions Min Typ Max Units 8 4 4 Switching Characteristics 5 t Turn-On Time - - 45 ns N (on) - t Turn-On Delay Time - 10 - ns C d(on) h tr Turn-On Rise Time VDD = 20V, ID = 70A - 19 - ns a td(off) Turn-Off Delay Time VGS = 10V, RGS = 5Ω - 36 - ns nn tf Turn-Off Fall Time - 16 - ns e l toff Turn-Off Time - - 81 ns P o Drain-Source Diode Characteristics w e I = 70A - - 1.25 V r V Source to Drain Diode Voltage SD T SD I = 35A - - 1.0 V r SD e t Reverse Recovery Time I = 70A, di/dt = 100A/µs - - 59 ns n rr F c Qrr Reverse Recovery Charge IF = 70A, di/dt = 100A/µs - - 77 nC h ® Notes: 1: Maximum wire current carrying capacity is 70A. M 2: Starting TJ = 25oC, L = 65µH, IAS = 56A. O S F E T This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 3 www.fairchildsemi.com FDB8445 Rev A1 (W)

F D Typical Characteristics B 8 4 4 5 1.2 100 LIPLIER1.0 A) 80 CBYU RWRIERNET LIMITED VGS = 10V N-Ch MU0.8 NT ( an ON RE 60 n SIPATI0.6 N CUR 40 el Po DIS0.4 RAI w WER 0.2 I, DD 20 erT O r P e 0.0 0 n 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 c h TC, CASE TEMPERATURE(oC) TC, CASE TEMPERATURE(oC) ® M Figure 1. Normalized Power Dissipation vs Case Figure 2. Maximum Continuous Drain Current vs O Temperature Case Temperature S F 2 E DUTY CYCLE - DESCENDING ORDER T 1 L D = 0.50 A 0.20 ERMZJCθ 00..1005 D THNCE, 00..0021 PDM ALIZEPEDA0.1 t1 MM t2 RI O NOTES: N DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 2000 TRANSCONDUCTANCE TC = 25oC 1000 MAY LIMIT CURRENT FOR TEMPERATURES T (A) IN THIS REGION ACBU ORRVEE N2T5 oACS D FEORLALTOEW PSE:AK REN I = I25 175 - TC R 150 U C 100 K A PE VGS = 10V , M ID SINGLE PULSE 10 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 4 www.fairchildsemi.com FDB8445 Rev A1 (W)

F Typical Characteristics D B 8 4 1000 500 45 If R = 0 T (A) 100 10us NT (A) 100 tItfAA RVV ==≠ ((0LL)/R(IA)lSn)[/((I1A.S3**RR)A/(T1E.3D*R BAVTDESDS -B VVDDDS)S - VDD) +1] N-C N E h RE RR a I, DRAIN CURD 110 OPSTTECJIN R==GA 2MLT5EAIoO XCPN UR ILANST TEEHDIS 11m00sus , AVALANCHE CUS 10 STARTING TJ = 150oC STARTING TJ = 25oC nnel Powe AREA MAY BE 10ms IA rT 0.1 LIMITED BY rDS(on) DC 1 re 1 10 100 0.01 0.1 1 10 100 400 n VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) c h NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 ® Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching M Capability O S F 140 140 E ENT (A) 110200 PDVUUDDLT SY=E C5 DVYUCRLEA T=I O0.N5 %= 8M0AµXs NT (A) 110200 VGS = 10V VGS = 5VDPUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0AµXs T URR 80 TJ = 175oC RRE 80 VGS = 4.5V N C 60 CU 60 I, DRAID 2400 TJ = 25oC TJ = -55oC , DRAIN D 2400 VGS = 4V I VGS = 3.5V 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 20 E2.0 ID = 70A PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0AµXs ANC1.8 DPUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0AµXs URCE mΩ)16 TJ = 175oC ESIST1.6 r, DRAIN TO SODS(on)ON-RESISTANCE (128 TJ = 25oC NORMALIZEDAIN TO SOURCE ON-R0111....8024 VIDG S= =7 01A0V R D0.6 4 5 6 7 8 9 10 -80 -40 0 40 80 120 160 200 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE(oC) Figure 9. On-Resistance vs Gate to Source Figure 10. Normalized Drain to Source On Voltage Resistance vs Junction Temperature 5 www.fairchildsemi.com FDB8445 Rev A1 (W)

F Typical Characteristics D B 8 4 4 1.2 1.15 5 1.1 VGS = VDS CE ID = 250µA N E ID = 250µA URE 1.10 -C TE AG1.0 SOAG h ZED GAD VOLT00..89 AIN TO N VOLT1.05 anne NORMALITHRESHOL00..67 ALIZED DRREAKDOW01..9050 l Powe 0.5 RMB rT O r 0.4 N 0.90 e -80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200 n TJ, JUNCTION TEMPERATURE(oC) TJ, JUNCTION TEMPERATURE (oC) ch ® Figure 11. Normalized Gate Threshold Voltage vs Figure 12. Normalized Drain to Source M Junction Temperature Breakdown Voltage vs Junction Temperature O S F E 10000 10 T ) V( 9 ID = 70A F) Ciss AGE 8 VDD = 15V p T NCE ( E VOL 67 VDD = 20V TA1000 RC 5 VDD = 25V CI U A O 4 CAP Coss O S 3 T E 2 f = 1MHz T A 100 VGS = 0V Crss , GGS 01 0.1 1 10 50 V 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Figure 14. Gate Charge vs Gate to Source Voltage Voltage 6 www.fairchildsemi.com FDB8445 Rev A1 (W)

F TRADEMARKS D B The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not 8 4 intended to be an exhaustive list of all such trademarks. 4 ACEx™ FAST® ISOPLANAR™ PowerSaver™ SuperSOT™-6 5 ActiveArray™ FASTr™ LittleFET™ PowerTrench® SuperSOT™-8 N - Bottomless™ FPS™ MICROCOUPLER™ QFET® SyncFET™ C Build it Now™ FRFET™ MicroFET™ QS™ TinyLogic® h a CoolFET™ GlobalOptoisolator™ MicroPak™ QT Optoelectronics™ TINYOPTO™ n n CROSSVOLT™ GTO™ MICROWIRE™ Quiet Series™ TruTranslation™ e DOME™ HiSeC™ MSX™ RapidConfigure™ UHC™ l P EcoSPARK™ I2C™ MSXPro™ RapidConnect™ UltraFET® o E2CMOS™ i-Lo™ OCX™ µSerDes™ UniFET™ w e EnSigna™ ImpliedDisconnect™ OCXPro™ ScalarPump™ VCX™ r FACT™ IntelliMAX™ OPTOLOGIC® SILENT SWITCHER® Wire™ T r FACT Quiet Series™ OPTOPLANAR™ SMART START™ e n PACMAN™ SPM™ c h Across the board. Around the world.™ POP™ Stealth™ ® The Power Franchise® Power247™ SuperFET™ M Programmable Active Droop™ PowerEdge™ SuperSOT™-3 O S F DISCLAIMER E FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY T PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be reasonably (b) support or sustain life, or (c) whose failure to perform expected to cause the failure of the life support device or when properly used in accordance with instructions for use system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 7 www.fairchildsemi.com FDB8445 Rev A1 (W)

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