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F D P 8 0 May 2013 3 0 L FDP8030L/FDB8030L / F D N-Channel Logic Level PowerTrench MOSFET B 8 0 General Description Features 3 0 L This N-Channel Logic level MOSFET has been • 80 A, 30 V. R = 0.0035 Ω @ V = 10 V designed specifically to improve the overall efficiency of DS(ON) GS R = 0.0045 Ω @ V = 4.5 V DC/DC converters using either synchronous or DS(ON) GS conventional switching PWM controllers. • Critical DC electrical parameters specified at These MOSFETS feature faster switching and lower elevated temperature gate charge than other MOSFETS with comparable RDS(on) specifications. • Rugged internal source-drain diode can eliminate the The result is a MOSFET that is easy and safer to drive need for an external Zener diode transient (even at very high frequencies), and DC/DC power suppressor supply designs with higher overall efficiency. • High performance trench technology for extremely low R DS(ON) • 175°C maximum junction temperature rating D D G G G TO-220 S TO-263AB D S FDP Series FDB Series S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1) 80 A – Pulsed (Note 1) 300 PD Total Power Dissipation @ TC = 25°C 187 W Derate above 25°C 1.25 W°C TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C TL Maximum lead temperature for soldering purposes, 275 °C 1/8” from case for 5 seconds Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 0.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W 2012 Fairchild Semiconductor Corporation FDP8030L/FDB8030L Rev C2(W)

F D Electrical Characteristics P T = 25°C unless otherwise noted A 8 Symbol Parameter Test Conditions Min Typ Max Units 0 3 0 Drain-Source Avalanche Ratings (Note 1) L WDSS Single Pulse Drain-Source VDD = 20 V, ID = 80 A 1500 mJ /F Avalanche Energy D IAR Maximum Drain-Source Avalanche 80 A B Current 8 0 Off Characteristics 3 BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V 0L ∆BVDSS Breakdown Voltage Temperature I = 250 µA, Referenced to 25°C 23 mV/°C ∆T Coefficient D J IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 2 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C –5 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = 10 V, ID = 80 A 3.1 3.5 mΩ On–Resistance T=125°C 4.0 5.6 J V = 4.5 V, I = 70 A 3.6 4.5 GS D ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 60 A gFS Forward Transconductance VDS = 10 V, ID = 80 A 170 S Dynamic Characteristics Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 10500 pF Coss Output Capacitance f = 1.0 MHz 2700 pF Crss Reverse Transfer Capacitance 1650 pF Switching Characteristics (Note 2) tD(on) Turn–On Delay Time VDD = 15 V, ID = 50 A, 20 35 ns tr Turn–On Rise Time VRGS == 41.05 Ω V, RGEN = 10 Ω 185 225 ns t Turn–Off Delay Time GS 160 200 ns D (off) t Turn–Off Fall Time 200 240 ns f Qg Total Gate Charge VDS = 15 V, 120 170 nC Qgs Gate–Source Charge ID = 80 A, VGS = 5 V 27 nC Q Gate–Drain Charge 48 nC gd Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current (Note 1) 80 A ISM Maximum Pulsed Drain-Source Diode Forward Current (Note 1) 300 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 80 A (Note 1) 1 1.3 V Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDP8030L/FDB8030L Rev C2(W)

F D Typical Characteristics P 8 0 3 0 100 3 L DRAIN-SOURCE CURRENT (A) 24680000 (cid:1) 3(cid:1) .4(cid:2)5.(cid:3)V5V(cid:4)(cid:5)(cid:1) 3.0V 2.5V R , NORMALIZEDDS(ON) RAIN-SOURCE ON-RESISTANCE12..5512 VG S = 2.5V 3.0V 3.5V 4.5V 6.0V 10V /FDB8030L I , D D 0.5 0 0 20 40 60 80 100 120 0 0.5 1 1.5 2 I D , DRAIN CURRENT (A) V , DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.01 1.6 ID = 40A R , NORMALIZEDDS(ON)RAIN-SOURCE ON-RESISTANCE011...8124 VIG D S = =8 01A0V R, ON-RESISTANCE (OHM)DS(ON)00000000........000000000000000023456789 TAT =A 1=2 255ooCC D 0.001 0.6 0 -50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 T J , JUNCTION TEMPERATURE (°C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 60 60 50 V D S = 10V T (A) 10 NT (A)40 RREN 1 TA = 125°C AIN CURRE30 TA = 125°C25°C-55°C DRAIN CU 0.1 25°C -55°C I , DRD1200 EVERSE 0.01 R 0.001 0 I , S V G S = 0V 1 2 3 4 V G S , GATE TO SOURCE VOLTAGE (V) 0.00010 0.2 0.4 0.6 0.8 1 1.2 1.4 V , BODY DIODE FORWARD VOLTAGE (V) SD Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP8030L/FDB8030L Rev C2(W)

F D Typical Characteristics P 8 0 3 0 L 10 18000 /F AGE (V) 8 ID = 80A V D S = 5V101V5V 10000 C i ss DB LT F) 8 E VO 6 CE (p 5000 03 RC AN C o ss 0 U T ATE-SO 4 CAPACI 2000 L G V , GS2 1000 VG S = 0V C r ss 0 500 0 40 80 120 160 200 240 0.1 0.5 1 2 5 10 30 Q g , GATE CHARGE (nC) V D S , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 600 5000 SINGLE PULSE 4000 A) R θ J C = 0.8°C/W RENT (100 100 μs W)3000 TC = 25°C RAIN CUR 10 SINGLTLEHI MPISIUT ALESRDEE BAY I SrD S(on) 1 ms POWER (2000 I , DD TRJθ J=C M= A0X.8 RoCA/WTED CURVE BENT TO 11D00C 0m mss 1000 TC = 25 oC MEASURED DATA 1 0 0.1 11 1010 100 0.1 0.3 1 3 10 30 100 300 1,000 V D S , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (mSEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 E NC 0.5 D = 0.5 EVITCEFFE DEZILAM T THERMAL RESISTA 00..00000...35123 000 ...0021.5 0 2 P(p k ) R θ RJ C t θ 1 J ( Ct ) t 2 = = r0(t.)8 *° C R/W θ J C RON SIEN 0.02 0.01 TJ - TC = P * R θ J C (t) ,)t(r TRAN Single Pulse Duty Cycle, D = t 1 /t2 0.005 0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000 t 1 ,TIME (ms) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP8030L/FDB8030L Rev C2(W)

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B 2Cool™ FPS™ Sync-Lock™ 8 AccuPower™ F-PFS™ ® ®* 0 AX-CAP®* FRFET® PowtmerTrench® 3 BitSiC™ Global Power ResourceSM PowerXS™ 0 Build it Now™ Green Bridge™ Programmable Active Droop™ TinyBoost™ L CorePLUS™ Green FPS™ QFET® TinyBuck™ TinyCalc™ CorePOWER™ Green FPS™ e-Series™ QS™ TinyLogic® CROSSVOLT™ Gmax™ Quiet Series™ TINYOPTO™ CTL™ GTO™ RapidConfigure™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ DEUXPEED® ISOPLANAR™ TinyPWM™ TinyWire™ DEcuoaSl CPAooRl™K® Manadr kBinegtt eSrm™all Speakers Sound Louder SSaigvninaglW oiuser ™world, 1mW/W/kW at a time™ TranSiC® TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ ® MicroFET™ Solutions for Your Success™ MicroPak™ SPM® FFaaiirrcchhiilldd® Semiconductor® MMiilclerorDPraivke2™™ SSTupEeArLFTEHT™® UHC® FACT Quiet Series™ MotionMax™ SuperSOT™-3 Ultra FRFET™ FACT® mWSaver™ SuperSOT™-6 UniFET™ FAST® OptoHiT™ SuperSOT™-8 VCX™ FastvCore™ OPTOLOGIC® SupreMOS® VisualMax™ FETBench™ OPTOPLANAR® SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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