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F D B 2 6 November 2013 1 4 — FDB2614 N - C N-Channel PowerTrench® MOSFET h a 200 V, 62 A, 27 mΩ n n e Features General Description l P o • RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semicon- w ductor’s advanced PowerTrench® process that has been tai- e • High Performance Trench technology for Extremely Low lored to minimize the on-state resistance while maintaining r T R DS(on) superior switching performance. r e • Low Gate Charge Applications n c h • High Power and Current Handing Capability • Synchronous Rectification ® M • Battery Protection Circuit O S • Motor Drives and Uninterruptible Power Supplies F E T D D G G S D2-PAK S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FDB2614 Unit V Drain-Source Voltage 200 V DS V Gate-Source Voltage ± 30 V GS I Drain Current - Continuous (T = 25°C) 62 A D C - Continuous (T = 100°C) 39.3 A C IDM Drain Current - Pulsed (Note 1) see Figure 9 A E Single Pulsed Avalanche Energy (Note 2) 145 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 260 W D C - Derate above 25°C 2.1 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDB2614 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.48 °C/W RθJA Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 °C/W RθJA Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max. 40 °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB2614 Rev. C1

F D B Package Marking and Ordering Information 2 6 1 Device Marking Device Package Reel Size Tape Width Quantity 4 FDB2614 FDB2614 D2-PAK 330 mm 24 mm 800 units — N - Electrical Characteristics C TC = 25°C unless otherwise noted h a Symbol Parameter Conditions Min Typ Max Unit n n Off Characteristics e l BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 200 -- -- V P o ΔBVDSS Breakdown Voltage Temperature I = 250μA, Referenced to 25°C -- 0.2 -- V/°C w / ΔTJ Coefficient D e r I Zero Gate Voltage Drain Current V = 200V, V = 0V -- -- 1 μA T DSS DS GS r VDS = 200V, VGS = 0V, TJ = 125°C -- -- 500 μA e n IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA c h IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA ® M On Characteristics O VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 4.0 5.0 V S F RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 31A -- 22.9 27 mΩ E T g Forward Transconductance V = 10V, I = 31A -- 72 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 5435 7230 pF iss V = 25V, V = 0V C Output Capacitance DS GS -- 505 675 pF oss f = 1.0MHz C Reverse Transfer Capacitance -- 110 165 pF rss Switching Characteristics t Turn-On Delay Time -- 77 165 ns d(on) V = 100V, I = 62A t Turn-On Rise Time DD D -- 284 560 ns r V = 10V, R = 25Ω GS GEN t Turn-Off Delay Time -- 103 220 ns d(off) (Note 4) t Turn-Off Fall Time -- 162 335 ns f Q Total Gate Charge -- 76 99 nC g V = 100V, I = 62A Q Gate-Source Charge DS D -- 35 -- nC gs V = 10V GS Qgd Gate-Drain Charge (Note 4) -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 186 A SM V Drain-Source Diode Forward Voltage V = 0V, I = 62A -- -- 1.2 V SD GS S t Reverse Recovery Time V = 0V, I = 62A -- 145 -- ns rr GS S dI /dt =100A/μs Q Reverse Recovery Charge F -- 0.81 -- μC rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2.L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 62A, di/dt ≤ 100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2006 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDB2614 Rev. C1

F D Typical Performance Characteristics B 2 6 1 4 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics — 500 1000 N VGS * Notes : -C Top : 15.0 V 1. VDS = 10V h 1 08..00 VV 2. 250μs Pulse Test a 100 7.0 V n nt[A] 66..50 VV nt[A] 100 ne urre Bottom : 5.5 V urre 150oC Pl Drain C 10 Drain C 10 owe I,D I,D -55oC rT * N1o.2te5s0 μ:s Pulse Test 25oC ren 2. TC = 25oC c 1 1 h 0.1 1 10 22 4 6 ® VDS,Drain-Source Voltage[V] VGS,Gate-Source Voltage[V] M O Figure 3. On-Resistance Variation vs. Drain Figure 4. Body Diode Forward Voltage Varia- S F Current and Gate Voltage tion vs. Source Current and Temperature E T 0.06 1000 * Note : TJ = 25oC * Notes : 1. VGS = 0V ance0.05 nt [A] 2. ID = 250μA R ,[]ΩDS(ON) Source On-Resist00..0034 VGS = 10V verse Drain Curre 10100 TA = 150oC TA = 25oC Drain-0.02 VGS = 20V , ReDR I 0.015 1 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0 1.2 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 9000 Ciss = Cgs + Cgd (Cds = shorted) 10 Coss = Cds + Cgd VDS = 40V Ciss Crss = Cgd e [V] 8 VVDS == 110600VV g DS pF] 6000 olta nces [ Coss urce V 6 a o Capacit 3000 * N21..o fVt e=G: S1 M= H0Vz , Gate-SS 4 Crss VG 2 0 * Note : ID = 62A 0.1 1 10 30 0 VDS, Drain-Source Voltage [V] 0 20 40 60 80 100 Qg, Total Gate Charge [nC] ©2006 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDB2614 Rev. C1

F D Typical Performance Characteristics B (Continued) 2 6 1 4 Figure 7. Breakdown Voltage Variation vs. Figure 8. On-Resistance Variation vs. Tem- — Temperature perature N - 1.2 3.0 C h e a ag e 2.5 n olt nc n BV, [Normalized]DSS Drain-Source Breakdown V 011...901 * N1o. VteGsS : = 0V r, [Normalized]DS(on) Drain-Source On-Resista 0112....5050 * N1.o VteGsS : = 10V PowerTrenchel 2. ID = 250μA 2. ID = 31A ® 0.8 0.0 M -100 -50 0 50 100 150 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] O S F Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case- E T Temperature 1000 70 A] 100 100 μs 60 I, Drain Current [D 101 Oisp Leirmatitioedn biny TRh DisS (Aonre)a 10D Cm1mss Drain Current [A] 345000 * Notes : , D 20 I 0.1 1. TC = 25oC 10 2. TJ = 150oC 3. Single Pulse 0 0.01 25 50 75 100 125 150 1 10 100 400 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve ]W100 C/ eo [ 0.5 s on10-1 0.2 esp 0.1 PDM R mal 0.05 t1t2 her10-2 00..0021 * Notes : T Z(t), θJC Single pulse 123... ZDTθJuJMtCy -( tFT) aC=c =0to .P4r,8D DoMC =*/t W1Z/θt 2JMCa(tx). 10-3 10-5 10-4 10-3 10-2 10-1 100 101 Rectangular Pulse Duration [sec] ©2006 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDB2614 Rev. C1

F D B 2 6 Figure 12. Gate Charge Test Circuit & Waveform 1 4 — N - C h VVGGSS a SSaammee TTyyppee n 5500KKΩΩ aass DDUUTT QQgg ne 1122VV 220000nnFF l 330000nnFF P o VV VVDDSS w GGSS QQggss QQggdd e r T r e DDUUTT n IG = const. ch ® M CChhaarrggee O S F E T Figure 13. Resistive Switching Test Circuit & Waveforms VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV VV DDUUTT GGSS GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VVGGSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp ©2006 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDB2614 Rev. C1

F D B 2 6 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 1 4 — N - DDUUTT ++ C h a n VV n DDSS e l P __ o w e r II T SSDD r LLL e n c h ® DDrriivveerr M RR O GG SSaammee TTyyppee S aass DDUUTT VVDDDD F E T VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------------------------------------------------------------------------------ GGGaaattteee PPPuuulllssseee PPPeeerrriiioooddd 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp ©2006 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDB2614 Rev. C1

F D Mechanical Dimensions B 2 6 1 2 TO-263 2L (D PAK) 4 — N - C h a n n e l P o w e r T r e n c h ® M O S F E T Figure 16. 2LD, TO263, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 Dimension in Millimeters ©2006 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDB2614 Rev. C1

F D B 2 6 1 4 — TRADEMARKS N The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not - C intended to be an exhaustive list of all such trademarks. h AccuPower™ F-PFS™ Sync-Lock™ a BAiXtS-CiCA™P®* FGRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* nn Build it Now™ GreenBridge™ PowerXS™ TinyBoost® el CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TinyBuck® P TinyCalc™ o CROSSVOLT™ Gmax™ QS™ TinyLogic® w CTL™ GTO™ Quiet Series™ TINYOPTO™ e CDuErUreXnPt ETEraDn®sfer Logic™ IISntOelPliMLAANXA™R™ Rapid™Configure™ TinyPower™ rT Dual Cool™ Marking Small Speakers Sound Louder TinyPWM™ r EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TTirnaynWSiiCre™™ en EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ c ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* h ® MMiiccrrooPFEakT™™ SSMoluAtRioTn sS fToAr RYTou™r Success™ SerDes™ M® Fairchild® MicroPak2™ SPM® O FFFFFAaAAasiSCCrtcTvTThC®® iQlodur eSie™et mSiecroiensd™uctor® MMmOOpPiWollttTeoiSorOHDnaLiMvTrOiev™areGx®™™IC® SSSSSTuuuuppppEeeeeArrrrLSSSFTEOOOHTTTT™®™™™---368 UUUVCHlntriXCFa™ E®FTR™FET™ SFET FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2006 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FDB2614 Rev. C1

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