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F D B 1 4 November 2013 N 3 0 FDB14N30 — TM N N-Channel UniFET MOSFET - C h 300 V, 14 A, 290 m a n n Features Description e l • R = 290 m (Max.) @ V = 10 V, I = 7 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage U DS(on) GS D n • Low Gate Charge (Typ. 18 nC) MOSFET family based on planar stripe and DMOS technology. iF This MOSFET is tailored to reduce on-state resistance, and to E • Low Crss (Typ.17 pF) provide better switching performance and higher avalanche T energy strength. This device family is suitable for switching T • 100% Avalanche Tested M power converter applications such as power factor correction • Improved dv/dt Capability (PFC), flat panel display (FPD) TV power, ATX and electronic M O Applications lamp ballasts. S F • Lighting E T • Uninterruptible Power Supply • AC-DC Power Supply D D G G S D2-PAK Absolute Maximum Ratings T = 25oC unless otherwise noted. S C Symbol Parameter FDB14N30TM Unit V Drain-Source Voltage 300 V DSS I Drain Current - Continuous (T = 25C) 14 A D C - Continuous (T = 100C) 8.4 A C I Drain Current - Pulsed (Note 1) 56 A DM V Gate-Source voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 330 mJ AS IAR Avalanche Current (Note 1) 14 A EAR Repetitive Avalanche Energy (Note 1) 14 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 140 W D C - Derate above 25C 1.12 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDB14N30TM Unit R Thermal Resistance, Junction to Case, Max 0.87 JC Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 oC/W R JA Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max. 40 ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB14N30 Rev. C1

F D Package Marking and Ordering Information B 1 4 Device Marking Device Package Reel Size Tape Width Quantity N 3 FDB14N30 FDB14N30TM D2-PAK 330mm 24mm 800 units 0 — Electrical Characteristics T = 25°C unless otherwise noted. N C - C Symbol Parameter Conditions Min. Typ. Max Unit h a Off Characteristics n n BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 300 -- -- V e l BVDSS Breakdown Voltage Temperature I = 250A, Referenced to 25C -- 0.3 -- V/C U / T Coefficient D n J i F I Zero Gate Voltage Drain Current V = 300V, V = 0V -- -- 1 A DSS DS GS E VDS = 240V, TC = 125C -- -- 10 A T T IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA M I Gate-Body Leakage Current, Reverse V = -30V, V = 0V -- -- -100 nA M GSSR GS DS O On Characteristics S V Gate Threshold Voltage V = V , I = 250A 3.0 -- 5.0 V F GS(th) DS GS D E R Static Drain-Source T DS(on) V = 10V, I = 7A -- 0.24 0.29  On-Resistance GS D g Forward Transconductance V = 40V, I = 7A -- 10.5 -- S FS DS D Dynamic Characteristics C Input Capacitance V = 25V, V = 0V, -- 815 1060 pF iss DS GS f = 1.0MHz C Output Capacitance -- 150 195 pF oss C Reverse Transfer Capacitance -- 17 25 pF rss Switching Characteristics t Turn-On Delay Time V = 150V, I = 14A -- 20 50 ns d(on) DD D R = 25 t Turn-On Rise Time G -- 105 120 ns r t Turn-Off Delay Time -- 30 70 ns d(off) t Turn-Off Fall Time (Note 4) -- 75 160 ns f Q Total Gate Charge V = 240V, I = 14A -- 18 25 nC g DS D V = 10V Q Gate-Source Charge GS -- 4.5 -- nC gs Q Gate-Drain Charge -- 8 -- nC gd (Note 4) Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 14 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 56 A SM V Drain-Source Diode Forward Voltage V = 0V, I = 14A -- -- 1.4 V SD GS S t Reverse Recovery Time V = 0V, I = 14A -- 235 -- ns rr GS S dI /dt =100A/s Q Reverse Recovery Charge F -- 1.6 -- C rr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2.8mH, IAS = 14A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD  14A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2007 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDB14N30 Rev. C1

F D Typical Characteristics B 1 4 N 3 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0 — 102 N 102 T o p : 1 5 V.0G SV -C 10.0 V h 8.0 V 7.0 V a I, Drain Current [A]D110001 B o t t o m : 566...550 VVV I, Drain Current [A]D 101 251oC50oC -55oC * Notes : nnel UniFET 10-1 * N12..o 2Tte5Cs 0= : s2 5PouClse Test 1002 4 6 8 21.. 2V5D1S0 0=s 4 P0uVlse Test 12 MTM 10-1 100 101 VGS, Gate-Source Voltage [V] O VDS, Drain-Source Voltage [V] S F E Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage T Drain Current and Gate Voltage Variation vs. Source Current and Temperatue 1.3 ce 1.2 102 n a 1.1 st A] On-Resi 01..90 VGS = 10V urrent [ R [], Drain-Source DS(ON)00000000........12345678 * Note : VTJG =S 2=5 o2C0V I, Reverse Drain CDR110001 150oC25oC * N12..o V2te5Gs0S :=s 0 PVulse Test 0 5 10 15 20 25 30 35 40 45 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 2000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd C Crss = Cgd V] 10 VDS = 60V citances [pF] 1000 oCssiss ource Voltage [ 68 VDSV =D S2 =4 01V50V a S Cap * Note : ate- 4 Crss 21.. fV =GS 1 = M 0H Vz V, GGS 2 * Note : ID = 14A 0 0 10-1 100 101 0 2 4 6 8 10 12 14 16 18 20 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G ©2007 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDB14N30 Rev. C1

F D Typical Characteristics B (Continued) 1 4 N 3 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation 0 vs. Temperature vs. Temperature — N - C 1.2 3.0 h e g a BV, (Normalized)DSSDrain-Source Breakdown Volta 011...901 * N12..o VItDeG s=S :=2 500 VA R, (Normalized)DS(ON)Drain-Source On-Resistance 01122.....50505 * N1.o VteGsS := 10 V nnel UniFET MTM 0.8 2. ID = 7 A O -100 -50 0 50 100 150 200 0.0-100 -50 0 50 100 150 200 S TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] FE T Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 15 102 10 s 100 s I, Drain Current [A]D111000-101 Ois pLeimraittieodn biny TRh DisS (oAn)rea 10D0 C1m0*s Nmo1ste ms :s I, Drain Current [A]D150 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 10-2 0 100 101 102 25 50 75 100 125 150 V , Drain-Source Voltage [V] T, Case Temperature [oC] DS C Figure 11. Transient Thermal Response Curve PDM t1 W] 110000 t2 oZ(t), Thermal Response [C/JCZ(t), Thermal ResponseZ(t), Thermal ResponseJCJC11110000----2121 DD000000==..0000....00000000....1111222255..55 ssiinnggllee ppuullssee * * NN123123......oo ZDTZDTttPeeJJuuDssJMJMCCMtt yy::((--tt ))TTFF ==CCaa cc==00tt oo..PP88trr199DD,, tMM DD2oo **CC== ZZtt//11WW//JJttCC22 ((MMtt))aaxx.. 1100--55 1100--44 1100--33 1100--22 1100--11 110000 110011 tt ,, SSqquuaarree WWaavvee PPuullssee DDuurraattiioonn [[sseecc]] 11 ©2007 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDB14N30 Rev. C1

F D B 1 4 Figure 12. Gate Charge Test Circuit & Waveform N 3 0 — N - C h a n n e l U n i F E T T M IG = const. M O S F E T Figure 13. Resistive Switching Test Circuit & Waveforms VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms V GS ©2007 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDB14N30 Rev. C1

F D B 1 4 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms N 3 0 — N DDUUTT ++ - C h a VV n DDSS n e __ l U n i F II E SSDD T LLL T M M DDrriivveerr O S RRGG F SSaammee TTyyppee E aass DDUUTT VVDDDD T VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp ©2007 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDB14N30 Rev. C1

F D Mechanical Dimensions B 1 4 2 N TO-263 2L (D PAK) 3 0 — N - C h a n n e l U n i F E T T M M O S F E T Figure 16. 2LD,TO263, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 Dimension in Millimeters ©2007 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDB14N30 Rev. C1

F D B 1 4 N 3 0 — TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not N intended to be an exhaustive list of all such trademarks. - C AccuPower™ F-PFS™ Sync-Lock™ h ABXitS-CiCA™P®* FGRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* an Build it Now™ GreenBridge™ PowerXS™ TinyBoost® n CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TTiinnyyBCuaclck™® el U CCTRLO™SSVOLT™ GGmTOax™™ QQSui™et Series™ TinyLogic® n TINYOPTO™ i Current Transfer Logic™ IntelliMAX™ RapidConfigure™ F DEUXPEED® ISOPLANAR™ ™ TinyPower™ E TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder T EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ T TranSiC™ M EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* M ® MicroFET™ SMART START™ SerDes™ O MicroPak™ Solutions for Your Success™ Fairchild® MicroPak2™ SPM® SF FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® ET FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ FAST® OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2007 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FDB14N30 Rev. C1

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