Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F C U 9 0 December 2014 0 N 6 FCU900N60Z 0 Z ® — N-Channel SuperFET II MOSFET N 600 V, 4.5 A, 900 mΩ -C h a Features Description n n • 675 V @ TJ = 150oC SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new el high voltage super-junction (SJ) MOSFET family that is utilizing S • Typ. R = 820 mΩ DS(on) u charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Q = 13 nC) p g and lower gate charge performance. This technology is tailored e • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.6 pF) to minimize conduction loss, provide superior switching perfor- rF • 100% Avalanche Tested mance, dv/dt rate and higher avalanche energy. Consequently, E SuperFET II MOSFET is very suitable for the switching power T • ESD Improved Capacity ® • RoHS Compliant apopwpleicra, tAioTnXs posuwcehr aansd iPndFuCs,t risael rpvoewr/teerl eacpopmlic aptioownse.r, FPD TV II M Applications O S • LCD / LED / PDP TV and Monitor Lighting F E • Solar Inverter T • Charger D G G D S I-PAK S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FCU900N60Z Unit V Drain to Source Voltage 600 V DSS - DC ±20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) ±30 - Continuous (T = 25oC) 4.5 I Drain Current C A D - Continuous (T = 100oC) 2.8 C I Drain Current - Pulsed (Note 1) 13.5 A DM E Single Pulsed Avalanche Energy (Note 2) 47.5 mJ AS I Avalanche Current (Note 1) 1 A AR E Repetitive Avalanche Energy (Note 1) 0.52 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 (T = 25oC) 52 W P Power Dissipation C D - Derate Above 25oC 0.42 W/oC T , T Operating and Storage Temperature Range -55 to +150 oC J STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC L Thermal Characteristics Symbol Parameter FCU900N60Z Unit R Thermal Resistance, Junction to Case, Max. 2.4 θJC oC/W R Thermal Resistance, Junction to Ambient, Max. 100 θJA ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCU900N60Z Rev. C3

F C Package Marking and Ordering Information U 9 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 0 0 FCU900N60Z FCU900N60Z IPAK Tube N/A N/A 70 units N 6 0 Electrical Characteristics T = 25oC unless otherwise noted. Z C — Symbol Parameter Test Conditions Min. Typ. Max. Unit N Off Characteristics - C I = 1 mA, V = 0 V, T = 25oC 625 - - h BVDSS Drain to Source Breakdown Voltage IDD = 1 mA, VGGSS = 0 V, TJJ = 150oC 675 - - V an ΔBV Breakdown Voltage Temperature n DSS I = 1 mA, Referenced to 25oC - 0.67 - V/oC e / ΔTJ Coefficient D l Drain to Source Avalanche Breakdown S BVDS Voltage VGS = 0 V, ID = 4.5 A - 700 - V up V = 600 V, V = 0 V - - 1 e I Zero Gate Voltage Drain Current DS GS μA r DSS V = 600 V, T = 125oC - - 10 F DS C E IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 μA T ® On Characteristics II M V Gate Threshold Voltage V = V , I = 250 μA 2.5 - 3.5 V GS(th) GS DS D O RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.3 A - 0.82 0.90 Ω S gFS Forward Transconductance VDS = 20 V, ID = 2.3 A - 4.6 - S FE T Dynamic Characteristics C Input Capacitance - 534 710 pF iss V = 25 V, V = 0 V, C Output Capacitance DS GS - 399 530 pF oss f = 1 MHz C Reverse Transfer Capacitance - 19.7 30 pF rss C Output Capacitance V = 380 V, V = 0 V, f = 1 MHz - 11.1 - pF oss DS GS C Effective Output Capacitance V = 0 V to 480 V, V = 0 V - 48.6 - pF oss(eff.) DS GS Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 2.3 A, - 13.1 17 nC Q Gate to Source Gate Charge V = 10 V - 2.2 - nC gs GS Q Gate to Drain “Miller” Charge (Note 4) - 4.5 - nC gd ESR Equivalent Series Resistance f = 1 MHz - 2.4 - Ω Switching Characteristics t Turn-On Delay Time - 10.9 32 ns d(on) tr Turn-On Rise Time VDD = 380 V, ID = 2.3 A, - 5.3 21 ns V = 10 V, R = 4.7 Ω t Turn-Off Delay Time GS G - 33.6 77 ns d(off) tf Turn-Off Fall Time (Note 4) - 11.9 34 ns Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 13.5 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 2.3 A - - 1.2 V SD GS SD trr Reverse Recovery Time VGS = 0 V, ISD = 2.3 A, - 156 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 1.3 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1.0 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 2.3 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FCU900N60Z Rev. C3

F C Typical Performance Characteristics U 9 0 0 N Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 0 20 20 Z VGS = 10.0V *Notes: — 10 8.0V 10 1. VDS = 20V 7.0V 2. 250μs Pulse Test N 6.0V - urrent[A] 5544....5050VVVV urrent[A] 150oC Chann C C 25oC e I, Drain D 1 I, Drain D 1 -55oC l Sup e *Notes: r 1. 250μs Pulse Test F 2. TC = 25oC ET 0.1 0.1 ® 0.2 1 10 20 2 4 6 8 I VDS, Drain to Source Voltage[V] VGS, Gate to Source Voltage[V] I M O Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage S Drain Current and Gate Voltage Variation vs. Source Current F E and Temperature T 2.0 50 stance1.6 nt [A] 10 150oC R [],ΩDS(ON)n to Source On-Resi01..82 VGS = 10V VGS = 20V Reverse Drain Curre 1 25oC Drai I, S *1N. oVtes := 0V GS 0.4 *Note: TC = 25oC 0.1 2. 250μs Pulse Test 0 3 6 9 12 0.4 0.8 1.2 1.6 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10000 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd V] 1000 Crss = Cgd ge [ 8 VVDDSS == 132000VV a olt VDS = 480V es [pF] 100 Ciss urce V 6 c o n S apacita 10 Coss Gate to 4 C * N 1o. tVeG:S = 0V Crss V, GS 2 1 2. f = 1MHz *Note: ID = 2.3A 0.5 0 0.1 1 10 100 600 0 3 6 9 12 15 VDS, Drain to Source Voltage [V] Qg, Total Gate Charge [nC] ©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FCU900N60Z Rev. C3

F C Typical Performance Characteristics U (Continued) 9 0 0 N Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation 6 vs. Temperature vs. Temperature 0 Z 1.15 3.0 — oltage 1.10 nce 2.5 N-C V a malized] akdown 1.05 malized] n-Resist 2.0 hann BV, [NorDSSDrain to Source Bre 001...990050 * N 1o. tVeGs:S = 0V R, [NorDS(on)Drain to Source O 011...505 * N 1o. tVeGs:S = 10V el SuperFET 2. ID = 1mA 2. ID = 2.3A ® 0.85 0.0 I -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 I TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] MO S Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current F E vs. Case Temperature T 20 5 10 10μs 4 A] n Current [ 1 DC1011mm0s0sμs Current [A] 3 VGS = 10V Drai Operation in This Area ain 2 I, D 0.1 is L*Nimotiteesd: by R DS(on) , DrD I 1. TC = 25oC 1 2. TJ = 150oC 3. Single Pulse 0.01 0 0.1 1 10 100 1000 25 50 75 100 125 150 VDS, Drain to Source Voltage [V] TC, Case Temperature [oC] Figure 11. Eoss vs. Drain to Source Voltage 2.8 2.4 2.0 J] μ 1.6 , [S S O E 1.2 0.8 0.4 0.0 0 100 200 300 400 500 600 V , Drain to Source Voltage [V] DS ©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FCU900N60Z Rev. C3

F C Typical Performance Characteristics U (Continued) 9 0 0 N Figure 12. Transient Thermal Response Curve 6 0 Z 3 — W] C/ N oponse []se [ZJCθ 1 0.5 -Cha Z(t), Thermal ResJCθThermal Respon 00000.....00021215Single pulse * N P12o..D tDZMeθsuJ:tCy( tF) a=ct 12tto.24r,o CD/=W t 1M/t2ax. nnel Super 0.1 3. TJM - TC = PDM * ZθJC(t) FE 10-5 10-4 10-3 10-2 10-1 100 T ® R t1e,c Rtaenctgaunlgaurl aPru Plusles eD Duuraratitoionn [[sseecc]] I I M O S F E T ©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FCU900N60Z Rev. C3

F C U 9 0 0 N 6 0 Z — N - C h a n n e l S u p e r F IG = const. E T ® I I M Figure 13. Gate Charge Test Circuit & Waveform O S F E T VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 14. Resistive Switching Test Circuit & Waveforms V GS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FCU900N60Z Rev. C3

F C U 9 0 0 N 6 0 Z — DDUUTT ++ N - C VV h DDSS a n __ n e l S u IISSDD p e LLL r F E T DDrriivveerr ® I RR I GG M SSaammee TTyyppee aass DDUUTT VVDDDD OS F VV E GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR T GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FCU900N60Z Rev. C3

F C Mechanical Dimensions U 9 0 0 N 6 0 Z — N - C h a n n e l S u p e r F E T ® I I M O S F E T Figure 17. TO251 (I-PAK), Molded, 3-Lead (Short Leads), FO71 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-S03 ©2012 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FCU900N60Z Rev. C3

F C U 9 0 0 N TRADEMARKS 6 The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not 0 intended to be an exhaustive list of all such trademarks. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. 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