Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F C P 9 N November 2013 6 0 N FCP9N60N / FCPF9N60NT / F ® C N-Channel SupreMOS MOSFET P F 600 V, 9 A, 385 mΩ 9 N 6 Features Description 0 N • RDS(on) = 330 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next T — • Ultra Low Gate Charge (Typ. Q = 22 nC) generation of high voltage super-junction (SJ) technology • Low Effective Output Capacitangce (Typ. C = 106 pF) employing a deep trench filling process that differentiates it from N oss(eff.) the conventional SJ MOSFETs. This advanced technology and - • 100% Avalanche Tested C precise process control provides lowest Rsp on-resistance, h • RoHS Compliant superior switching performance and ruggedness. SupreMOS a n Application MOSFET is suitable for high frequency switching power con- n verter applications such as PFC, server/telecom power, FPD TV e • LCD/LED/PDP TV power, ATX power, and industrial power applications. l S • Lighting u p • Solar Inverter r e • AC-DC Power Supply M O S D ® M O S F E G G T D G S TO-220 DS TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FCP9N60N FCPF9N60NT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS - Continuous (T = 25oC) 9.0 9.0* I Drain Current C A D - Continuous (T = 100oC) 5.7 5.7* C I Drain Current - Pulsed (Note 1) 27 27* A DM E Single Pulsed Avalanche Energy (Note 2) 135 mJ AS I Avalanche Current (Note 1) 3 A AR E Repetitive Avalanche Energy (Note 1) 0.83 mJ AR MOSFET dv/dt 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns (T = 25oC) 83.3 29.8 W P Power Dissipation C D - Derate Above 25oC 0.67 0.24 W/oC T , T Operating and Storage Temperature Range -55 to +150 oC J STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP9N60N FCPF9N60NT Unit RθJC Thermal Resistance, Junction to Case, Max. 1.5 4.2 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

F C Package Marking and Ordering Information P 9 N Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 6 FCP9N60N FCP9N60N TO-220 Tube N/A N/A 50 units 0 N FCPF9N60NT FCPF9N60NT TO-220F Tube N/A N/A 50 units / F Electrical Characteristics T = 25oC unless otherwise noted. C C P Symbol Parameter Test Conditions Min. Typ. Max. Unit F 9 N Off Characteristics 6 BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V, TC = 25oC 600 - - V 0N ΔBV Breakdown Voltage Temperature T / ΔTDSS Coefficient ID = 1 mA, Referenced to 25oC - 0.72 - V/oC — J V = 480 V, V = 0 V - - 10 I Zero Gate Voltage Drain Current DS GS μA N DSS V = 480 V, V = 0 V, T = 125oC - - 100 - DS GS C C IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA h a n On Characteristics n VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V el R Static Drain to Source On Resistance V = 10 V, I = 4.5 A - 0.33 0.385 Ω S DS(on) GS D u g Forward Transconductance V = 40 V, I = 4.5 A - 7.5 - S p FS DS D r e Dynamic Characteristics M O C Input Capacitance - 930 1240 pF iss V = 100 V, V = 0 V, S C Output Capacitance DS GS - 35 50 pF ® oss f = 1 MHz C Reverse Transfer Capacitance - 2 4 pF M rss O C Output Capacitance V = 380 V, V = 0 V, f = 1 MHz - 20 - pF oss DS GS S Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 106 - pF F Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 4.5 A, - 22.0 29 nC ET Qgs Gate to Source Gate Charge VGS = 10 V - 4.1 - nC Q Gate to Drain “Miller” Charge (Note 4) - 7.1 - nC gd ESR Equivalent Series Resistance (G-S) f = 1 MHz 2.9 Ω Switching Characteristics t Turn-On Delay Time - 12.7 35.4 ns d(on) tr Turn-On Rise Time VDD = 380 V, ID = 4.5 A, - 8.7 27.4 ns V = 10 V, R = 4.7 Ω t Turn-Off Delay Time GS G - 36.9 83.8 ns d(off) tf Turn-Off Fall Time (Note 4) - 10.2 30.4 ns Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 9.0 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 27 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 4.5 A - - 1.2 V SD GS SD trr Reverse Recovery Time VGS = 0 V, ISD = 4.5 A, - 213 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 2.2 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 9 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

F C Typical Performance Characteristics P 9 N 6 0 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics N 100 60 / VGS = 15.0 V FC 10.0 V P 8.0 V F 7.0 V 9 ent[A] 10 665...505 VVV ent[A]10 N60 Curr 5.0 V Curr 150oC 25oC NT ain ain -55oC — I, DrD 1 I, DrD 1 N- C *Notes: *Notes: h 1. 250μs Pulse Test 1. VDS = 20V a 2. TC = 25oC 2. 250μs Pulse Test n 0.1 0.1 n 0.1 1 10 20 2 4 6 8 e l VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V] S u Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage p r Drain Current and Gate Voltage Variation vs. Source Current e M and Temperature O 1.2 100 S ® M O ce1.0 A] S []ΩR ,DS(ON)Source On-Resistan00..68 VGS = 10V erse Drain Current [ 10 150oC 25oC FET n- VGS = 20V ev ai0.4 R Dr , S *Notes: I 1. V = 0V GS 0.2 *Notes: TC = 25oC 1 2. 250μs Pulse Test 0 5 10 15 20 25 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 5000 10 Ciss = Cgs + Cgd (Cds = shorted) 4000 CCorssss == CCgdds + Cgd ge [V] 8 VVVDDDSSS === 134208000VVV ces [pF] 3000 Coss * N 12o.. tfVe =Gs :S1 M= H0Vz urce Volta 6 n o a S acit 2000 ate- 4 p G Ca Ciss , S G 1000 V 2 Crss *Notes: ID = 4.5A 0 0 0.1 1 10 100 600 0 5 10 15 20 25 VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC] ©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

F C Typical Performance Characteristics P (Continued) 9 N 6 0 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation N vs. Temperature vs. Temperature / F 1.2 3.0 C P ge F olta nce 2.5 9N BV, [Normalized]DSSn-Source Breakdown V 011...901 R, [Normalized]DS(on)ain-Source On-Resista 112...050 60NT — N-Ch ai *Notes: Dr 0.5 *Notes: a Dr 1. VGS = 0V 1. VGS = 10V nn 2. ID = 1mA 2. ID = 4.5A e 0.8 0.0 l -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 S TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] u p r Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area e M for FCPF9N60N for FCPF9N60NT O 50 100 S 10μs 10μs M® 10 100μs O A] A] 10 100μs S Current [ 1 DC10ms1ms Current [ 101mmss FET Drain Oisp Leirmaittieodn biny TRh DisS (Aonre)a Drain 1 Oisp Leirmatitioedn biny TRh DisS (Aonre)a I, D 0.1 *Notes: I, D 0.1 *Notes: DC 1. TC = 25oC 1. TC = 25oC 2. TJ = 150oC 2. TJ = 150oC 3. Single Pulse 3. Single Pulse 0.01 0.01 1 10 100 1000 1 10 100 1000 VDS, Drain-Sou rce Voltage [V] VDS, Drain-Sou rce Voltage [V] Figure 11. Maximum Drain Current vs. Case Temperature 10 8 A] nt [ 6 e urr C n ai 4 Dr , D I 2 0 25 50 75 100 125 150 TC, Case Temperature [oC] ©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

F C Typical Performance Characteristics P (Continued) 9 N 6 Figure 12. Transient Thermal Response Curve for FCP9N60N 0N / F 2 C W] P onse [C/][ZθJC 1 00..52 F9N6 (t), Thermal Respohermal Response C 0.1 000S0....0i001n521gle pulse * N 1o.P tZeDθsMJ:C(t) = 1t.15to2C/W Max. 0NT — N-C ZθTJ 0.01 2. Duty Factor, D= t1/t2 h 3. TJM - TC = PDM * ZθJC(t) a 0.005 n 10-5 10-4 10-3 10-2 10-1 1 n e R te1,c Rtaencgtaunlgaur lParu Plsuels De uDruartaiotino n[ s[seecc]] l S u Figure 13. Transient Thermal Response Curve for FCPF9N60NT p r e M O 5 W] S® ose [C/]ZθJC 1 0.5 MO Respon[onse 00..21 SFE al sp 0.05 PDM T me (t), Therhermal RC 0.1 00..0021 * N 1o. tZeθsJ:C(t) = 4t.12to2C/W Max. ZTθJ Single pulse 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 10-5 10-4 10-3 10-2 10-1 1 10 102 t1, RReecctatannggulualra Pr uPlsuels Deu Drautrioanti o[sne c[s] e c ] ©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

F C P 9 N 6 0 N / F C P F 9 N 6 0 N T — N - C h IG = const. a n n e l S u Figure 14. Gate Charge Test Circuit & Waveform p r e M O S ® M VVDDSS RRLL VVDDSS 9900%% OS VVGGSS VVDDDD FE RR T GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 15. Resistive Switching Test Circuit & Waveforms V GS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

F C P 9 N 6 0 N / F C DDUUTT ++ P F 9 N VV DDSS 6 0 N __ T — II N SSDD - LLL C h a n n DDrriivveerr e l RR GG S SSaammee TTyyppee u aass DDUUTT VVDDDD p r e M VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR O GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd S SSDD ® M O S F E T GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

F C Mechanical Dimensions P 9 N 6 0 N / F C P F 9 N 6 0 N T — N - C h a n n e l S u p r e M O S ® M O S F E T Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2009 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

F C Mechanical Dimensions P 9 N 6 0 N / F C P F 9 N 6 0 N T — N - C h a n n e l S u p r e M O S ® M O S F E T Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2009 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

F C P 9 N 6 0 N / TRADEMARKS F The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not C intended to be an exhaustive list of all such trademarks. P AccuPower™ F-PFS™ Sync-Lock™ F AX-CAP®* FRFET® ® ®* 9 BitSiC™ Global Power ResourceSM PowtmerTrench® N 6 Build it Now™ GreenBridge™ PowerXS™ TinyBoost® 0 CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TTiinnyyBCuaclck™® NT CCTRLO™SSVOLT™ GGmTOax™™ QQSui™et Series™ TinyLogic® — TINYOPTO™ CDuErUreXnPt ETEraDn®sfer Logic™ IISntOelPliMLAANXA™R™ Rapid™Configure™ TinyPower™ N DEcuoaSl CPAooRl™K® Manadr kBinegtt eSrm™all Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TTTiirnnayynPWSWiiCreM™™™ -Ch EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ a ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* n ® MMiiccrrooPFEakT™™ SSMoluAtRioTn sS fToAr RYTou™r Success™ μSerDes™ ne Fairchild® MicroPak2™ SPM® l S FFFAAaiCCrcTTh® iQldu Sieet mSiecroiensd™uctor® MMmiWollteiSorDnaMvrievarex®™™ SSSTuuppEeeArrLSFTEOHTT™®™-3 UUHltrCa ®FRFET™ upr FAST® OptoHiT™ SuperSOT™-6 UniFET™ e FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ M FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ O FPS™ SyncFET™ VoltagePlus™ S XS™ ® M *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2009 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com FCP9N60N / FCPF9N60NT Rev. C1

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