Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F C D 4 N October 2013 6 0 FCD4N60 — ® N N-Channel SuperFET MOSFET - C h 600 V, 3.9 A, 1.2  a n n Features Description e l • 650 V @T = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first genera- S J u • Typ. R = 1.0  tion of high voltage super-junction (SJ) MOSFET family that is p DS(on) utilizing charge balance technology for outstanding low on- e • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) resistance and lower gate charge performance. This technology rF • Low Effective Output Capacitance (Typ. C .eff = 32 pF) is tailored to minimize conduction loss, provide superior switch- E oss T ing performance, dv/dt rate and higher avalanche energy. Con- • 100% Avalanche Tested ® sequently, SuperFET MOSFET is very suitable for the switching M • RoHS Compliant power applications such as PFC, server/telecom power, FPD O TV power, ATX power and industrial power applications. S Applications F E • Lighting • AC-DC Power Supply T • Solar Inverter D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FCD4N60TM Unit V Drain to Source Voltage 600 V DSS - Continuous (T = 25oC) 3.9 I Drain Current C A D - Continuous (T = 100oC) 2.5 C IDM Drain Current - Pulsed (Note 1) 11.7 A V Gate to Source Voltage ±30 V GSS EAS Single Pulsed Avalanche Energy (Note 2) 128 mJ IAR Avalanche Current (Note 1) 3.9 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (T = 25oC) 50 W P Power Dissipation C D - Derate above 25oC 0.4 W/oC T , T Operating and Storage Temperature Range -55 to +150 oC J STG Maximum Lead Temperature for Soldering Purpose, T 300 oC L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCD4N60TM Unit R Thermal Resistance, Junction to Case, Max. 2.5 oC/W JC R Thermal Resistance, Junction to Ambient, Max. 83 oC/W JA ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCD4N60 Rev. C1

F C Package Marking and Ordering Information D 4 Device Marking Device Package Reel Size Tape Width Quantity N 6 FCD4N60 FCD4N60TM D-PAK 380mm 16m 2500 0 — Electrical Characteristics TC = 25oC unless otherwise noted N Symbol Parameter Test Conditions Min. Typ. Max. Unit -C h Off Characteristics a n V = 0 V, I = 250 μA, T = 25oC 600 - - V n BVDSS Drain to Source Breakdown Voltage VGGSS = 0 V, IDD = 250 μA, TCC = 150oC - 650 - V el S BV Breakdown Voltage Temperature DSS I = 1 mA, Referenced to 25oC - 0.6 - V/oC u / TJ Coefficient D p BV Drain-Source Avalanche Breakdown e DS V = 0 V, I = 3.9 A - 700 - V r Voltage GS D F E V = 600 V, V = 0 V - - 1 I Zero Gate Voltage Drain Current DS GS A T DSS V = 480 V, T = 125oC - - 10 ® DS C I Gate to Body Leakage Current V = ±30 V, V = 0 V - - ±100 nA M GSS GS DS O On Characteristics S F V Gate Threshold Voltage V = V , I = 250 A 3.0 - 5.0 V E GS(th) GS DS D T RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.0 A - 1.0 1.2  gFS Forward Transconductance VDS = 40 V, ID = 2.0 A - 3.2 - S Dynamic Characteristics C Input Capacitance - 415 540 pF iss V = 25 V, V = 0 V C Output Capacitance DS GS - 210 275 pF oss f = 1.0 MHz C Reverse Transfer Capacitance - 19.5 - pF rss C Output Capacitance V = 480 V, V = 0 V, f = 1.0 MHz - 12 16 pF oss DS GS C eff. Effective Output Capacitance V = 0 V to 400 V, V = 0 V - 32 - pF oss DS GS Switching Characteristics t Turn-On Delay Time - 16 45 ns d(on) tr Turn-On Rise Time VDD = 300 V, ID = 3.9 A - 45 100 ns R = 25  t Turn-Off Delay Time G - 36 85 ns d(off) tf Turn-Off Fall Time (Note 4) - 30 70 ns Qg(tot) Total Gate Charge at 10V VDS = 480 V, ID = 3.9 A, - 12.8 16.6 nC Qgs Gate to Source Gate Charge VGS = 10 V - 2.4 - nC Q Gate to Drain “Miller” Charge (Note 4) - 7.1 - nC gd Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 3.9 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 11.7 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 11 A - - 1.4 V SD GS SD t Reverse Recovery Time V = 0 V, I = 11 A - 277 - ns rr GS SD dI /dt = 100 A/s Q Reverse Recovery Charge F - 2.07 - C rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 1.9 A, VDD = 50 V, RG = 25 , Starting TJ = 25C 3. ISD  3.9 A, di/dt  200 A/s, VDD  BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FCD4N60 Rev. C1

F C Typical Performance Characteristics D 4 N 6 0 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics — N V 10 Top : 15.0GS V 101 -C 10.0 V 8.0V h 7.5 V a 7.0 V A] n nt [A] B o t t o m : 566...550 VVV ent [ 150oC ne I, Drain CurreD0.11 * N12..o 2Tte5Cs 0= : s2 5PouClse Test I , Drain CurrD 100 25oC -55oC * N1.o VteDS = 40V l SuperFE 2. 250s Pulse Test T 10-1 ® 0.1 1 10 2 4 6 8 10 M V , Drain-Source Voltage [V] V , Gate-Source Voltage [V] DS GS O S F Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage E Drain Current and Gate Voltage Variation vs. Source Current T and Temperatue 4 e anc A] 101 n-Resist 3 urrent [ O C Source 2 VGS = 10V e Drain 100 R [],Drain-DS(ON)1 * NVotGeS : =T J2 =0 2V5oC I , ReversDR 150oC 25oC * N12..o V2te5Gs0S :=s 0 PVulse Test 0 10-1 0.0 2.5 5.0 7.5 10.0 12.5 0.2 0.4 0.6 0.8 1.0 1.2 I, Drain Current [A] V , Source-Drain Voltage [V] D SD Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 1200 12 1000 CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) e [V] 10 VVDVDSDS = S= =4 3 810020V0VV acitance [pF] 680000 CCiossss * N12..o Vfte =GsS 1 := M 0H Vz Source Voltag 68 Cap 400 ate- 4 G 200 , GS 2 V Crss * Note : ID = 3.9A 0 0 100 101 0 5 10 15 V , Drain-Source Voltage [V] Q , Total Gate Charge [nC] DS G ©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FCD4N60 Rev. C1

F C Typical Performance Characteristics D (Continued) 4 N 6 0 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation — vs. Temperature vs. Temperature N - 1.2 3.0 C e h BV, (Normalized)DSSSource Breakdown Voltag 011...901 * N1.o Vtes := 0 V R, (Normalized)DS(ON)ain-Source On-Resistance1122....0505 annel SuperFE Drain- 2. IDG =S 250A Dr0.5 * N12..o VItDeG s=S :=2 .100 A V T® 0.8 0.0 M -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 O TJ, Junction Temperature [C TJ, Junction Temperature [oC S F E T Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 4 Operation in This Area is Limited by R DS(on) 101 10 us 3 n Current [A] 100 10 ms1 ms100 us n Current [A] 2 ai DC ai Dr Dr I, D * N1.o Ttes = : 25 oC I, D 1 C 2. T = 150 oC J 10-1 3. Single Pulse 0 100 101 102 103 25 50 75 100 125 150 V , Drain-Source Voltage [V] T, Case Temperature [oC] DS C Figure 11. Transient Thermal Response Curve W] C/ D=0.5 oe [nse 100 Z(t), Thermal ResponsZ(t), Thermal RespoJCJC 10-1 00000....000.12251 single pulse * N123P...o DDZTteMJusJMCt y:(-t )TF =Ca c=2tt 1o.P5tr2 D,o MDC *=/ WZt1/ JtMC2(at)x. 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 ©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FCD4N60 Rev. C1

F C D 4 N Figure 12. Gate Charge Test Circuit & Waveform 6 0 — N - C VV h SSaammee TTyyppee GGSS a n 5500KKΩΩ aass DDUUTT QQ n gg e 1122VV 220000nnFF 1100VV l 330000nnFF S VV u VVGGSS DDSS QQ QQ p ggss ggdd e r F E DDUUTT T ® IG = co33nmmsAAt. M O S CChhaarrggee F E T Figure 13. Resistive Switching Test Circuit & Waveforms VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp ©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FCD4N60 Rev. C1

F C D 4 N Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 0 — N - DDUUTT ++ C h a n VV n DDSS e l __ S u p e IISSDD rF E LLL T ® M DDrriivveerr O RR S GG F SSaammee TTyyppee E aass DDUUTT VVDDDD T VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp ©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FCD4N60 Rev. C1

F C Mechanical Dimensions D 4 N 6 TO-252 3L (DPAK) 0 — N - C h a n n e l S u p e r F E T ® M O S F E T Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 Dimension in Millimeters ©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FCD4N60 Rev. C1

F C D 4 N 6 0 — TRADEMARKS N The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not - intended to be an exhaustive list of all such trademarks. C h AccuPower™ F-PFS™ Sync-Lock™ ABXitS-CiCA™P®* GFRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* ann Build it Now™ GreenBridge™ PowerXS™ TinyBoost® e CCoorreePPLOUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TinyBuck® l S CCTRLO™SSVOLT™ GGTmOax™™ QQSui™et Series™ TTiinnyyCLoaglcic™® up TINYOPTO™ e Current Transfer Logic™ IntelliMAX™ RapidConfigure™ DEUXPEED® ISOPLANAR™ ™ TinyPower™ rF TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder E EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ T EfficentMax™ MegaBuck™ SignalWise™ TranSiC™ ® TriFault Detect™ ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* M MicroFET™ SMART START™ ® MicroPak™ Solutions for Your Success™ SerDes™ O Fairchild® MicroPak2™ SPM® S FFaAiCrcTh iQldu Sieetm Siecroiensd™uctor® MMoillteiorDnMrivaex™™ SSuTpEeArLFTEHT™® UHC® FE FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ T FAST® OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FCD4N60 Rev. C1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FCD4N60TM