ESDA6V1U1 TRANSIL ARRAY Application Specific Discretes A.S.D. FOR ESD PROTECTION APPLICATIONS Where transient overvoltage protection in ESD sensitiveequipmentisrequired,suchas: COMPUTERS n PRINTERS n COMMUNICATION SYSTEMS n GSMHANDSETSANDACCESSORIES n CARRADIO n It is particulary recommended for parallel port protectionwherethelineinterfacewithstandsonly 2kVESDsurge. SO-8 FEATURES 6UNIDIRECTIONALTRANSILFUNCTIONS n FUNCTIONALDIAGRAM LOWLEAKAGECURRENT:I max.<2m A n R 200WPEAKPULSEPOWER(8/20m s) n DESCRITION The ESDA6V1U1 is a monolithic voltage suppressordesignedtoprotectcomponentswhich are connected to data and transmission lines againstESD. It clamps the voltage just above the logic level supplyfor positive transients, andto a diodedrop belowgroundfornegativetransients. BENEFITS HighESDprotectionlevel :upto25kV Highintegration Suitableforhighdensityboards COMPLIESWITHTHEFOLLOWINGSTANDARDS: IEC61000-4-2:level 4 MILSTD883C-Method3015-6:class3 (humanbodymodel) August 2002 - Ed:3A 1/6

ESDA6V1U1 ABSOLUTEMAXIMUMRATINGS (T =25°C) amb Symbol Parameter Value Unit V Electrostaticdischarge 25 kV PP MILSTD883C-Method3015-6 P Peakpulsepower(8/20m s) 200 W PP T Storagetemperaturerange -55to+150 °C stg T Maximumjunctiontemperature 125 (cid:176) C j TL Maximumleadtemperatureforsolderingduring10s 260 (cid:176) C ELECTRICALCHARACTERISTICS(T =25°C) amb Symbol Parameter V Stand-offvoltage RM V Breakdownvoltage BR V Clampingvoltage CL I Leakagecurrent RM I Peak pulsecurrent PP a T Voltage temperaturecoefficient C Capacitance Rd Dynamicresistance V Forwardvoltagedrop F Types V I I @ V Rd a T C V @ I BR R RM RM F F @ min. max. max. typ. max. typ. max. note1 note2 0Vbias V V mA m A V W 10-4/°C pF V mA ESDA6V1U1 6.1 7.2 1 2 5 0.5 6 100 1.5 200 note1:Squarepulse,Ipp=25A,tp=2.5m s. note2: D VBR=a T*(Tamb-25°C)*VBR(25°C) 2/6

ESDA6V1U1 CALCULATION OFTHECLAMPINGVOLTAGE USEOFTHEDYNAMIC RESISTANCE TheESDAfamilyhasbeendesignedtoclampfast As the value of the dynamic resistance remains spikes like ESD. Generally the PCB designers stable for a surge duration lower than 20m s, the needtocalculateeasilytheclampingvoltageV . 2.5m s rectangular surge is well adapted. In CL This is why we give the dynamic resistance in addition both rise and fall times are optimized to addition to the classical parameters. The voltage avoid any parasitic phenomenon during the across the protection cell can be calculated with measurementofRd. thefollowingformula: V =V +RdI CL BR PP WhereIppisthepeakcurrentthroughtheESDAcell. DYNAMIC RESISTANCE MEASUREMENT TheshortdurationoftheESDhasledustoprefer amoreadaptedtestwave,asbelowdefined,tothe classical8/20m sand10/1000m ssurges. 2.5m sdurationmeasurementwave. 3/6

ESDA6V1U1 Fig.1:Peak powerdissipationversusinitial Fig. 2:Peakpulsepowerversusexponential junctiontemperature. pulseduration(Tjinitial=25°C). Fig. 3:Clampingvoltageversuspeakpulse Fig.4:Capacitanceversusreverse applied current(Tjinitial=25°C). voltage(typicalvalues). Rectangularwaveform tp=2.5m s. Fig.5:Relativevariationofleakagecurrent Fig.6 : Peakforward voltage drop versuspeak versusjunctiontemperature(typicalvalues). forward current(typical values). 4/6

ESDA6V1U1 APPLICATION EXAMPLE:Protectionoflogic-level signals. APPLICATION EXAMPLE:Protectionofsymmetricalsignals. Note:CapacitancevaluebetweenanyI/OpinandGroundisdividedby2. 5/6

ESDA6V1U1 ORDERCODE ESDA 6 V 1 U 1 RL PACKAGING: RL=Tape andreel =Tube ESDARRAY PACKAGE: SO8PLASTIC V min Unidirectionel BR MARKING:Logo,DateCode,E6V1U1 PACKAGE MECHANICALDATA SO-8 Plastic DIMENSIONS REF. Millimetres Inches Min. Typ. Max. Min. Typ. Max. A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.50 0.020 c1 45°(typ) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S 8°(max) Packaging : Preferredpackagingistapeandreel. Weight:0.08g. Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto changewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied. STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenap- provalofSTMicroelectronics. TheSTlogoisaregisteredtrademarkofSTMicroelectronics ©2002STMicroelectronics-PrintedinItaly-Allrightsreserved. STMicroelectronicsGROUPOFCOMPANIES Australia-Brazil-Canada-China-Finland-France-Germany HongKong-India-Israel-Italy-Japan-Malaysia-Malta-Morocco-Singapore Spain-Sweden-Switzerland-UnitedKingdom-UnitedStates. http://www.st.com 6/6

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