ESD9L, SESD9L Series ESD Protection Diode Ultra−Low Capacitance The ESD9L Series is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is www.onsemi.com suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. 1 2 Specification Features: • PIN 1. CATHODE Ultra Low Capacitance 0.5 pF 2. ANODE • Low Clamping Voltage • Small Body Outline Dimensions: 0.039″ x 0.024″(1.00 mm x 0.60 mm) 2 • Low Body Height: 0.016″ (0.4 mm) • Stand−off Voltage: 3.3 V, 5 V 1 • Low Leakage SOD−923 • Response Time is Typically < 1.0 ns CASE 514AB • IEC61000−4−2 Level 4 ESD Protection • S and SZ Prefixes for Automotive and Other Applications Requiring MARKING DIAGRAM Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 1 X M 2 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic X = Specific Device Code Epoxy Meets UL 94 V−0 M = Date Code LEAD FINISH: 100% Matte Sn (Tin) *Date Code orientation and/or position may MOUNTING POSITION: Any vary depending upon manufacturing location. QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping† Rating Symbol Value Unit ESD9LxxxST5G SOD−923 8000/Tape & Reel IEC 61000−4−2 (ESD) Contact ±10 kV (Pb−Free) Air ±15 SESD9LxxxST5G SOD−923 8000/Tape & Reel Total Power Dissipation on FR−5 Board °PD° 150 mW (Pb−Free) (Note 1) @ TA = 25°C Storage Temperature Range Tstg −55 to +150 °C SZESD9LxxxST5G (SPObD−F−r9e2e3) 8000/Tape & Reel Junction Temperature Range TJ −55 to +150 °C †For information on tape and reel specifications, Lead Solder Temperature − Maximum TL 260 °C including part orientation and tape sizes, please (10 Second Duration) refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. DEVICE MARKING INFORMATION See specific marking information in the device marking See Application Note AND8308/D for further description of survivability specs. column of the Electrical Characteristics tables starting on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2017 − Rev. 7 ESD9L/D

ESD9L, SESD9L Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) I Symbol Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VC VBRVRWM IR VF V VBR Breakdown Voltage @ IT IT IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Ppk Peak Power Dissipation Uni−Directional C Max. Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types) VRWM IR ((cid:2)A) VBR (V) @ IT VC (V) (V) @ VRWM (Note 2) IT C (pF) @ IPP = 1 A VC Device Per IEC61000−4−2 Device* Marking Max Max Min mA Typ Max Max (Note 4) ESD9L3.3ST5G 6** 3.3 1.0 4.8 1.0 0.5 0.9 9.0 Figures 1 and 2 See Below ESD9L5.0ST5G D 5.0 1.0 5.4 1.0 0.5 0.9 9.8 Figures 1 and 2 See Below *Includes S and SZ-prefix devices where applicable. **Rotated 180°. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 2

ESD9L, SESD9L Series IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak First Peak Test Volt- Current Current at Current at 100% Level age (kV) (A) 30 ns (A) 60 ns (A) 90% 1 2 7.5 4 2 2 4 15 8 4 I @ 30 ns 3 6 22.5 12 6 4 8 30 16 8 I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec Device Under ESD Gun Oscilloscope Test 50 (cid:2) 50 (cid:2) Cable Figure 4. Diagram of ESD Test Setup The following is taken from Application Note systems such as cell phones or laptop computers it is not AND8308/D − Interpretation of Datasheet Parameters clearly defined in the spec how to specify a clamping voltage for ESD Devices. at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD ESD Voltage Clamping protection diode over the time domain of an ESD pulse in the For sensitive circuit elements it is important to limit the form of an oscilloscope screenshot, which can be found on voltage that an IC will be exposed to during an ESD event the datasheets for all ESD protection diodes. For more to as low a voltage as possible. The ESD clamping voltage information on how ON Semiconductor creates these is the voltage drop across the ESD protection diode during screenshots and how to interpret them please refer to an ESD event per the IEC61000−4−2 waveform. Since the AND8307/D. IEC61000−4−2 was written as a pass/fail spec for larger 100 tr PEAK VALUE IRSM @ 8 (cid:2)s T 90 N E 80 PULSE WIDTH (tP) IS DEFINED R AS THAT POINT WHERE THE R U 70 PEAK CURRENT DECAY = 8 (cid:2)s C E 60 ULS 50 HALF VALUE IRSM/2 @ 20 (cid:2)s P K 40 A E P 30 F tP O 20 % 10 0 0 20 40 60 80 t, TIME ((cid:2)s) Figure 5. 8 X 20 (cid:2)s Pulse Waveform www.onsemi.com 3

ESD9L, SESD9L Series PACKAGE DIMENSIONS SOD−923 CASE 514AB ISSUE C −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME −Y− Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. E 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE 1 2 MINIMUM THICKNESS OF BASE MATERIAL. 2Xb 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.08 X Y TOP VIEW MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A 0.34 0.37 0.40 0.013 0.015 0.016 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.07 0.12 0.17 0.003 0.005 0.007 D 0.75 0.80 0.85 0.030 0.031 0.033 E 0.55 0.60 0.65 0.022 0.024 0.026 HE 0.95 1.00 1.05 0.037 0.039 0.041 L 0.19 REF 0.007 REF c HE L2 0.05 0.10 0.15 0.002 0.004 0.006 SIDE VIEW SOLDERING FOOTPRINT* 2XL 1.20 2X 0.36 2X 0.25 2XL2 PACKAGE BOTTOM VIEW OUTLINE DIMENSIONS: MILLIMETERS See Application Note AND8455/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com ESD9L/D 4

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: ESD9L5.0ST5G ESD9L3.3ST5G SESD9L3.3ST5G