ESD7L, SESD7L ESD Protection Diode Ultra−Low Capacitance The ESD7L Series is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping capability, low leakage and fast response time are combined with an www.onsemi.com ultra low diode capacitance of 0.5 pF to provide best in class protection from IC damage due to ESD. The ultra small SOT−723 package is ideal for designs where board space is at a premium. The PIN1.CATHODE 1 ESD7L Series can be used to protect two uni−directional lines or one 2.CATHODE 3 3.ANODE 2 bi−directional line. When used to protect one bi−directional line, the effective capacitance is 0.25 pF. Because of its low capacitance, it is well suited for protecting high frequency signal lines such as USB2.0 high speed and antenna line applications. Specification Features: SCALE 4:1 • Low Capacitance 0.5 pF Typical • Low Clamping Voltage SOT−723 • Small Body Outline Dimensions: CASE 631AA 0.047” x 0.047” (1.20 mm x 1.20 mm) • Low Body Height: 0.020″ (0.5 mm) • Stand−off Voltage: 5 V • MARKING DIAGRAM Low Leakage • Response Time is Typically < 1.0 ns • IEC61000−4−2 Level 4 ESD Protection L6 M • S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable L6 = Specific Device Code • This is a Pb−Free Device M = Date Code Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 ORDERING INFORMATION LEAD FINISH: 100% Matte Sn (Tin) Device Package Shipping† MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C ESD7L5.0DT5G SOT−723 8000/Tape & Reel Device Meets MSL 1 Requirements (Pb−Free) MAXIMUM RATINGS SESD7L5.0DT5G SOT−723 8000/Tape & Reel (Pb−Free) Rating Symbol Value Unit IEC 61000−4−2 (ESD) Contact ±10 kV †For information on tape and reel specifications, including part orientation and tape sizes, please Total Power Dissipation on FR−5 Board °PD° 150 mW refer to our Tape and Reel Packaging Specifications (Note 1) @ TA = 25°C Brochure, BRD8011/D. Storage Temperature Range Tstg −55 to +150 °C Junction Temperature Range TJ −55 to +150 °C DEVICE MARKING INFORMATION Lead Solder Temperature − Maximum TL 260 °C See specific marking information in the device marking (10 Second Duration) column of the Electrical Characteristics tables starting on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2017 − Rev. 7 ESD7L/D

ESD7L, SESD7L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) I Symbol Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VC VBRVRWM IR VF V VBR Breakdown Voltage @ IT IT IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Ppk Peak Power Dissipation Uni−Directional C Capacitance @ VR = 0 and f = 1.0 MHz ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) VBR (V) C (pF), C (pF), VC (V) VRWM IR ((cid:2)A) @ IT uni−directional bi−directional @ IPP = 1 A (V) @ VRWM (Note 2) IT (Note 3) (Note 4) (Note 5) VC Per IEC61000− Device 4−2 Device* Marking Max Max Min mA Typ Max Typ Max Max (Note 6) ESD7L5.0DT5G L6 5.0 1.0 5.4 1.0 0.5 0.9 0.25 0.45 10.4 Figures 1 and 2 *Include S-prefix devices where applicable. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Uni−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 3; pin 2 to pin 3). 4. Bi−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 2). 5. Surge current waveform per Figure 5. 6. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000−4−2 Negative 8 kV contact per IEC 61000−4−2 www.onsemi.com 2

ESD7L, SESD7L IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak First Peak Test Volt- Current Current at Current at 100% Level age (kV) (A) 30 ns (A) 60 ns (A) 90% 1 2 7.5 4 2 2 4 15 8 4 I @ 30 ns 3 6 22.5 12 6 4 8 30 16 8 I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec Device Under ESD Gun Oscilloscope Test 50 (cid:2) 50 (cid:2) Cable Figure 4. Diagram of ESD Test Setup The following is taken from Application Note systems such as cell phones or laptop computers it is not AND8308/D − Interpretation of Datasheet Parameters clearly defined in the spec how to specify a clamping voltage for ESD Devices. at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD ESD Voltage Clamping protection diode over the time domain of an ESD pulse in the For sensitive circuit elements it is important to limit the form of an oscilloscope screenshot, which can be found on voltage that an IC will be exposed to during an ESD event the datasheets for all ESD protection diodes. For more to as low a voltage as possible. The ESD clamping voltage information on how ON Semiconductor creates these is the voltage drop across the ESD protection diode during screenshots and how to interpret them please refer to an ESD event per the IEC61000−4−2 waveform. Since the AND8307/D. IEC61000−4−2 was written as a pass/fail spec for larger 100 tr PEAK VALUE IRSM @ 8 (cid:2)s T 90 N E 80 PULSE WIDTH (tP) IS DEFINED R AS THAT POINT WHERE THE R U 70 PEAK CURRENT DECAY = 8 (cid:2)s C E 60 ULS 50 HALF VALUE IRSM/2 @ 20 (cid:2)s P K 40 A E P 30 F tP O 20 % 10 0 0 20 40 60 80 t, TIME ((cid:2)s) Figure 5. 8 X 20 (cid:2)s Pulse Waveform www.onsemi.com 3

ESD7L, SESD7L PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME D Y14.5M, 1994. b1 A 2. CONTROLLING DIMENSION: MILLIMETERS. 3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. E HE 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 1 2 2X e 2Xb0.08 X Y C DAIM M0.I4NM5ILLNI0MO.5EM0TERSM0.A55X SIDE VIEW b 0.15 0.21 0.27 TOP VIEW b1 0.25 0.31 0.37 C 0.07 0.12 0.17 3XL D 1.15 1.20 1.25 1 E 0.75 0.80 0.85 e 0.40 BSC HE 1.15 1.20 1.25 L 0.29 REF L2 0.15 0.20 0.25 3XL2 RECOMMENDED BOTTOM VIEW SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com ESD7L/D 4

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