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ESD7C3.3DT5G产品简介:
ICGOO电子元器件商城为您提供ESD7C3.3DT5G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 ESD7C3.3DT5G价格参考。ON SemiconductorESD7C3.3DT5G封装/规格:TVS - 二极管, Clamp Ipp Tvs Diode Surface Mount SOT-723。您可以下载ESD7C3.3DT5G参考资料、Datasheet数据手册功能说明书,资料中有ESD7C3.3DT5G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TVS DIODE 3.3VWM SOT723TVS二极管阵列 ESD PROTECT DIODE |
产品分类 | |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,TVS二极管,TVS二极管阵列,ON Semiconductor ESD7C3.3DT5G- |
数据手册 | |
产品型号 | ESD7C3.3DT5G |
PCN设计/规格 | |
不同频率时的电容 | 13pF @ 1MHz |
产品目录绘图 | |
产品目录页面 | |
产品种类 | TVS二极管阵列 |
供应商器件封装 | SOT-723 |
其它名称 | ESD7C3.3DT5GOSCT |
击穿电压 | 5 V |
功率-峰值脉冲 | - |
包装 | 剪切带 (CT) |
单向通道 | 2 |
双向通道 | - |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | SOT-723 |
封装/箱体 | SOT-723 |
尺寸 | 0.8 mm W x 1.2 mm L |
工作温度 | -55°C ~ 150°C (TJ) |
工作电压 | 3.3 V |
工厂包装数量 | 8000 |
应用 | 通用 |
最大工作温度 | + 150 C |
最小工作温度 | - 55 C |
极性 | Unidirectional |
标准包装 | 1 |
电压-击穿(最小值) | 5V |
电压-反向关态(典型值) | 3.3V (最小值) |
电压-箝位(最大值)@Ipp | - |
电容 | 12 pF |
电流-峰值脉冲(10/1000µs) | - |
电源线路保护 | 无 |
端接类型 | SMD/SMT |
类型 | 齐纳 |
系列 | ESD7C |
通道 | 2 Channels |
ESD7C, SZESD7C SERIES ESD Protection Diode Micro−Packaged Diodes for ESD Protection The ESD7CxxD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time make these parts ideal for ESD protection on designs www.onsemi.com where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power PIN1.CATHODE 1 supplies and many other portable applications. 2.CATHODE 3 Specification Features: 3.ANODE 2 • Low Capacitance 6.2 pF to 13 pF • Low Clamping Voltage • MARKING Small Body Outline Dimensions: DIAGRAM 0.047″ x 0.047″ (1.20 mm x 1.20 mm) • Low Body Height: 0.020″ (0.5 mm) • L5 M Stand−off Voltage: 3.3 V, 5 V • SOT−723 Low Leakage • CASE 631AA 1 Response Time < 1 ns • L5 = Specific Device Code ESD Rating of Class 3 (> 16 kV) per Human Body Model M = Date Code • IEC61000−4−2 Level 4 ESD Protection • *Date Code orientation and/or position may SZ Prefix for Automotive and Other Applications Requiring Unique vary depending upon manufacturing location. Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices ORDERING INFORMATION Mechanical Characteristics: Device Package Shipping† CASE: Void-free, transfer-molded, thermosetting plastic ESD7CxxDT5G SOT−723 8000 / Epoxy Meets UL 94 V−0 (Pb−Free) Tape & Reel LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any SZESD7CxxDT5G SOT−723 8000 / QUALIFIED MAX REFLOW TEMPERATURE: 260°C (Pb−Free) Tape & Reel Device Meets MSL 1 Requirements †For information on tape and reel specifications, including part orientation and tape sizes, please MAXIMUM RATINGS refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Rating Symbol Value Unit IEC 61000−4−2 (ESD) Contact ±8.0 kV Air ±15 DEVICE MARKING INFORMATION Total Power Dissipation on FR−5 Board ⎪ See specific marking information in the device marking (Note 1) @ TA = 25°C PD 240 mW column of the table on page 2 of this data sheet. Derate above 25°C 1.9 mW/°C Thermal Resistance Junction−to−Ambient R(cid:2)JA 525 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to °C +150 Lead Solder Temperature − Maximum TL 260 °C (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2017 − Rev. 4 ESD7C3.3D/D
ESD7C, SZESD7C SERIES ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VC VBRVRWM V VBR Breakdown Voltage @ IT IIRT VF IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation IPP C Max. Capacitance @VR = 0 and f = 1 MHz *See Application Note AND8308/D for detailed explanations of Uni−Directional datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA) VBR (V) @ IT C (pF) C (pF) VRWM (V) IR ((cid:2)A) @ VRWM (Note 3) IT (Note 4) (Note 4) VC Device Per IEC61000−4−2 Device (Note 2) Marking Max Max Min mA Typ Max (Note 5) ESD7C3.3DT5G L5 3.3 1.0 5.0 1.0 12 13 Figures 1 and 2 See Below ESD7C5.0DT5G L4 5.0 0.5 11 1.0 6.0 6.2 (Note 6) 2. Include SZ−prefix devices where applicable. 3. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 4. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 6. ESD7C5.0DT5G shown below. Other voltages available upon request. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 2
ESD7C, SZESD7C SERIES IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Test First Peak Voltage Current Current at Current at 100% Level (kV) (A) 30 ns (A) 60 ns (A) 90% 1 2 7.5 4 2 2 4 15 8 4 I @ 30 ns 3 6 22.5 12 6 4 8 30 16 8 I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec Device Under ESD Gun Oscilloscope Test 50 (cid:2) 50 (cid:2) Cable Figure 4. Diagram of ESD Test Setup The following is taken from Application Note systems such as cell phones or laptop computers it is not AND8308/D − Interpretation of Datasheet Parameters clearly defined in the spec how to specify a clamping voltage for ESD Devices. at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD ESD Voltage Clamping protection diode over the time domain of an ESD pulse in the For sensitive circuit elements it is important to limit the form of an oscilloscope screenshot, which can be found on voltage that an IC will be exposed to during an ESD event the datasheets for all ESD protection diodes. For more to as low a voltage as possible. The ESD clamping voltage information on how ON Semiconductor creates these is the voltage drop across the ESD protection diode during screenshots and how to interpret them please refer to an ESD event per the IEC61000−4−2 waveform. Since the AND8307/D. IEC61000−4−2 was written as a pass/fail spec for larger www.onsemi.com 3
ESD7C, SZESD7C SERIES PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME D Y14.5M, 1994. b1 A 2. CONTROLLING DIMENSION: MILLIMETERS. 3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. E HE 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 1 2 2X e 2Xb0.08 X Y C DAIM M0.I4NM5ILLNI0MO.5EM0TERSM0.A55X SIDE VIEW b 0.15 0.21 0.27 TOP VIEW b1 0.25 0.31 0.37 C 0.07 0.12 0.17 3XL D 1.15 1.20 1.25 1 E 0.75 0.80 0.85 e 0.40 BSC HE 1.15 1.20 1.25 L 0.29 REF L2 0.15 0.20 0.25 3XL2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com ESD7C3.3D/D 4
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