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  • 型号: ESD5Z7.0T1G
  • 制造商: ON Semiconductor
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ESD5Z7.0T1G产品简介:

ICGOO电子元器件商城为您提供ESD5Z7.0T1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 ESD5Z7.0T1G价格参考。ON SemiconductorESD5Z7.0T1G封装/规格:TVS - 二极管, 。您可以下载ESD5Z7.0T1G参考资料、Datasheet数据手册功能说明书,资料中有ESD5Z7.0T1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 7VWM 22.7VC SOD523TVS 二极管 - 瞬态电压抑制器 SOD523 ESD DIODE

产品分类

TVS - 二极管

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,TVS二极管,TVS 二极管 - 瞬态电压抑制器,ON Semiconductor ESD5Z7.0T1G-

数据手册

点击此处下载产品Datasheet

产品型号

ESD5Z7.0T1G

PCN设计/规格

点击此处下载产品Datasheet点击此处下载产品Datasheet

不同频率时的电容

-

产品种类

TVS 二极管 - 瞬态电压抑制器

供应商器件封装

SOD-523

其它名称

ESD5Z7.0T1G-ND
ESD5Z7.0T1GOSTR
ESD5Z70T1G

击穿电压

7.5 V

功率-峰值脉冲

200W

包装

带卷 (TR)

单向通道

1

双向通道

-

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SC-79,SOD-523

封装/箱体

SOD-523

尺寸

0.8 mm W x 1.2 mm L

峰值浪涌电流

8.8 A

峰值脉冲功率耗散

200 W

工作温度

-55°C ~ 150°C (TJ)

工作电压

7 V

工厂包装数量

3000

应用

通用

最大工作温度

+ 150 C

最小工作温度

- 55 C

极性

Unidirectional

标准包装

3,000

电压-击穿(最小值)

7.5V

电压-反向关态(典型值)

7V

电压-箝位(最大值)@Ipp

22.7V

电容

65 pF

电流-峰值脉冲(10/1000µs)

8.8A (8/20µs)

电源线路保护

端接类型

SMD/SMT

类型

齐纳

系列

ESD5Z2.5T1G

钳位电压

22.7 V

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PDF Datasheet 数据手册内容提取

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series ESD Protection Diode Micro−Packaged Diodes for ESD Protection The ESD5Z Series is designed to protect voltage sensitive wwwwww..oonnsseemmii..ccoomm components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many SOD−523 other portable applications. CASE 502 STYLE 1 Specification Features: • Low Clamping Voltage • Small Body Outline Dimensions: 1 2 0.047″ x 0.032″ (1.20 mm x 0.80 mm) Cathode Anode • Low Body Height: 0.028″ (0.7 mm) • Stand−off Voltage: 2.5 V − 12 V MARKING DIAGRAM • Peak Power up to 240 Watts @ 8 x 20 (cid:2)s Pulse • Low Leakage • Response Time is Typically < 1 ns XXM(cid:2) • ESD Rating of Class 3 (> 16 kV) per Human Body Model 1 (cid:2) 2 • IEC61000−4−2 Level 4 ESD Protection XX = Specific Device Code • IEC61000−4−4 Level 4 EFT Protection M = Date Code • SZ Prefix for Automotive and Other Applications Requiring Unique (cid:2) = Pb−Free Package Site and Control Change Requirements; AEC−Q101 Qualified and (Note: Microdot may be in either location) PPAP Capable *Date Code orientation may vary • depending upon manufacturing location. These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic ORDERING INFORMATION Epoxy Meets UL 94 V−0 Device Package Shipping† LEAD FINISH: 100% Matte Sn (Tin) SZ/ESD5ZxxxT1G SOD−523 3000 / MOUNTING POSITION: Any Pb−Free Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260°C SZ/ESD5ZxxxT5G SOD−523 8000 / Device Meets MSL 1 Requirements Pb−Free Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics tables starting on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2018 − Rev. 15 ESD5Z2.5T1/D

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series MAXIMUM RATINGS Rating Symbol Value Unit IEC 61000−4−2 (ESD) kV Contact ±30 Air ±30 IEC 61000−4−4 (EFT) 40 A ESD Voltage kV Per Human Body Model 16 V Per Machine Model 400 Total Power Dissipation on FR−4 Board (Note 1) @ TA = 25°C °PD° 500 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2. See Application Note AND8308/D for further description of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) I Symbol Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VC VBRVRWM V VBR Breakdown Voltage @ IT IIRT VF IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Ppk Peak Power Dissipation Uni−Directional C Max. Capacitance @VR = 0 and f = 1 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. www.onsemi.com 2

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) VBR (V) VC (V) VRWM IR ((cid:2)A) @ IT @ IPP = VC (V) @ IPP Ppk C (V) @ VRWM (Note 2) IT 5.0 A† Max IPP† (A)† (W)† (pF) VC Per Device IEC61000−4−2 Device* Marking Max Max Min mA Typ Max Max Max Typ (Note 3) ESD5Z2.5T1G/T5G ZD 2.5 6.0 4.0 1.0 6.5 10.9 11.0 120 145 Figures 1 and 2 See Below ESD5Z3.3T1G/T5G ZE 3.3 0.05 5.0 1.0 8.4 14.1 11.2 158 105 (Note 4) ESD5Z5.0T1G/T5G ZF 5.0 0.05 6.2 1.0 11.6 18.6 9.4 174 80 ESD5Z6.0T1G/T5G ZG 6.0 0.01 6.8 1.0 12.4 20.5 8.8 181 70 ESD5Z7.0T1G/T5G ZH 7.0 0.01 7.5 1.0 13.5 22.7 8.8 200 65 ESD5Z12T1G/T5G ZM 12 0.01 14.1 1.0 17 25 9.6 240 55 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes SZ-prefix devices where applicable. †Surge current waveform per Figure 5. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. ESD5Z5.0T1G shown below. Other voltages available upon request. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000−4−2 Negative 8 kV contact per IEC 61000−4−2 www.onsemi.com 3

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak First Peak Test Volt- Current Current at Current at 100% Level age (kV) (A) 30 ns (A) 60 ns (A) 90% 1 2 7.5 4 2 2 4 15 8 4 I @ 30 ns 3 6 22.5 12 6 4 8 30 16 8 I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec ESD Gun Oscilloscope 50 (cid:3) Cable 50 (cid:3) Figure 4. Diagram of ESD Test Setup The following is taken from Application Note systems such as cell phones or laptop computers it is not AND8308/D − Interpretation of Datasheet Parameters clearly defined in the spec how to specify a clamping voltage for ESD Devices. at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD ESD Voltage Clamping protection diode over the time domain of an ESD pulse in the For sensitive circuit elements it is important to limit the form of an oscilloscope screenshot, which can be found on voltage that an IC will be exposed to during an ESD event the datasheets for all ESD protection diodes. For more to as low a voltage as possible. The ESD clamping voltage information on how ON Semiconductor creates these is the voltage drop across the ESD protection diode during screenshots and how to interpret them please refer to an ESD event per the IEC61000−4−2 waveform. Since the AND8307/D. IEC61000−4−2 was written as a pass/fail spec for larger 100 tr PEAK VALUE IRSM @ 8 (cid:2)s 90 T N E 80 PULSE WIDTH (tP) IS DEFINED R AS THAT POINT WHERE THE R U 70 PEAK CURRENT DECAY = 8 (cid:2)s C E 60 ULS 50 HALF VALUE IRSM/2 @ 20 (cid:2)s P K 40 A E P 30 F tP O 20 % 10 0 0 20 40 60 80 t, TIME ((cid:2)s) Figure 5. 8 X 20 (cid:2)s Pulse Waveform www.onsemi.com 4

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series PACKAGE DIMENSIONS SOD−523 CASE 502 ISSUE E −X− D NOTES: −Y− 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. E MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 1 2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO- 2Xb TRUSIONS, OR GATE BURRS. 0.08 M X Y MILLIMETERS DIM MIN NOM MAX TOP VIEW A 0.50 0.60 0.70 b 0.25 0.30 0.35 c 0.07 0.14 0.20 D 1.10 1.20 1.30 E 0.70 0.80 0.90 A HE 1.50 1.60 1.70 L 0.30 REF L2 0.15 0.20 0.25 c H STYLE 1: E PIN 1.CATHODE (POLARITY BAND) 2.ANODE SIDE VIEW RECOMMENDED 2X L SOLDERING FOOTPRINT* 1.80 2X 0.48 2X 0.40 2X L2 BOTTOM VIEW PACKAGE OUTLINE DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com ESD5Z2.5T1/D 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: ESD5Z12T1G ESD5Z2.5T1G ESD5Z3.3T1G ESD5Z5.0T1G ESD5Z6.0T1G ESD5Z7.0T1G ESD5Z7.0T5G ESD5Z3.3T5G ESD5Z6.0T5G ESD5Z2.5T5G ESD5Z5.0T5G ESD5Z12T5G SZESD5Z12T5G SZESD5Z2.5T5G SZESD5Z3.3T5G