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  • 型号: ESD207B102ELE6327XTMA1
  • 制造商: Infineon
  • 库位|库存: xxxx|xxxx
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ESD207B102ELE6327XTMA1产品简介:

ICGOO电子元器件商城为您提供ESD207B102ELE6327XTMA1由Infineon设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 ESD207B102ELE6327XTMA1价格参考¥0.36-¥0.70。InfineonESD207B102ELE6327XTMA1封装/规格:TVS - 二极管, 。您可以下载ESD207B102ELE6327XTMA1参考资料、Datasheet数据手册功能说明书,资料中有ESD207B102ELE6327XTMA1 详细功能的应用电路图电压和使用方法及教程。

型号为 ESD207B102ELE6327XTMA1 的 TVS 二极管由英飞凌科技(Infineon Technologies)生产,属于瞬态电压抑制(TVS)二极管系列。这类器件主要用于保护电子电路免受静电放电(ESD)、电快速瞬变脉冲群(EFT/B)和其他瞬态过压事件的损害。

 应用场景:
1. 消费类电子产品  
   - 用于智能手机、平板电脑、笔记本电脑等设备中的接口保护,例如 USB、HDMI、MIPI、SPI 和 I2C 接口。
   - 保护音频和视频信号线免受 ESD 和浪涌冲击。

2. 通信设备  
   - 在路由器、交换机、调制解调器等网络设备中,保护以太网端口、Wi-Fi 模块和其他通信接口。
   - 提供高数据速率接口(如 PCIe、USB 3.x)的保护,确保信号完整性。

3. 工业自动化  
   - 用于工业控制系统的传感器接口、通信总线(如 RS-485、CAN 总线)以及电源输入端口的保护。
   - 抑制由于开关操作或外部干扰引起的瞬态电压。

4. 汽车电子  
   - 保护车载信息娱乐系统、导航模块、摄像头和雷达传感器的接口。
   - 符合汽车级标准,能够在严苛的工作环境中提供可靠的 ESD 和浪涌保护。

5. 医疗设备  
   - 用于便携式医疗设备(如血压计、血糖仪)的数据接口保护。
   - 确保患者监护设备和诊断仪器在复杂电磁环境下的稳定运行。

 特性与优势:
- 低电容设计:适合高速数据传输应用,减少对信号完整性的干扰。
- 高钳位电压:有效抑制瞬态电压,保护下游敏感电路。
- 小封装尺寸:适合空间受限的设计,便于集成到小型化产品中。
- 符合国际标准:满足 IEC 61000-4-2(ESD)和 IEC 61000-4-4(EFT/B)的要求。

总结来说,ESD207B102ELE6327XTMA1 是一款高性能的 TVS 二极管,广泛应用于需要高可靠性和高保护水平的电子设备中,特别是在面对频繁 ESD 威胁或复杂电磁环境的应用场景下表现出色。
产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 3.3VWM 8.1VC TLSP-2-19

产品分类

TVS - 二极管

品牌

Infineon Technologies

数据手册

http://www.infineon.com/dgdl/ESD207-B1-02Eseries_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433fcce646013fe73388cf685b

产品图片

产品型号

ESD207B102ELE6327XTMA1

PCN封装

点击此处下载产品Datasheet

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同频率时的电容

14pF @ 1MHz

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=30476

供应商器件封装

TSLP-2-19

其它名称

ESD207B102ELE6327XTMA1DKR

功率-峰值脉冲

-

包装

Digi-Reel®

单向通道

-

双向通道

1

安装类型

表面贴装

封装/外壳

SOD-882

工作温度

-40°C ~ 125°C (TJ)

应用

通用

标准包装

1

电压-击穿(最小值)

3.65V

电压-反向关态(典型值)

3.3V (最小值)

电压-箝位(最大值)@Ipp

8.1V

电流-峰值脉冲(10/1000µs)

8A (8/20µs)

电源线路保护

类型

齐纳

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PDF Datasheet 数据手册内容提取

TVS Diode Transient Voltage Suppressor Diodes ESD207-B1-02 Series Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diodes ESD207-B1-02ELS ESD207-B1-02EL Data Sheet Revision 1.3, 2013-12-19 Final Power Management & Multimarket

ESD207-B1-02 Series Revision History: Revision 1.2, 2013-11-15 Page or Item Subjects (major changes since previous revision) Revision 1.3, 2013-12-19 5 Table2-2) updated Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLIDFLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYOYUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 FinalData Sheet 2 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diodes 1 Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diodes 1.1 Features • ESD / transient / surge protection of one data / V line exceding standard: bus – IEC61000-4-2 (ESD): ±30kV (air/contact discharge) – IEC61000-4-4 (EFT): ±50A (5/50ns) – IEC61000-4-5 (surge): ±8A (8/20μs) • Bi-directional, symmetrical working voltage up to V =±3.3V RWM • Medium capacitance: C =14pF (typ.) L • Ultra low clamping voltage V =7V (typ.) @ I =16A (TLP) CL PP • Ultra low dynamic resistance R =0.13Ω typ. DYN • Pb-free (RoHS compliant) and halogen free package 1.2 Application Examples • Audio Line, Speaker, Headset, Microphone Protection • Human Interface Devices (Keyboard, Touchpad, Buttons) 1.3 Product Description Pin 1 Pin 2 Pin 1 Pin 1 marking (lasered) TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram PG-TS(S)LP-2_Dual_Diode_Serie_PinConf_and_SchematicDiag.vsd Figure1-1 Pin Configuration and Schematic Diagram Table1-1 Ordering Information Type Package Configuration Marking code ESD207-B1-02ELS TSSLP-2-3 1 line, bi-directional Y ESD207-B1-02EL TSLP-2-19 1 line, bi-directional A FinalData Sheet 3 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Characteristics 2 Characteristics Table2-1 Maximum Ratings at T = 25°C, unless otherwise specified1) A Parameter Symbol Values Unit Min. Typ. Max. ESD contact discharge2) V – – 30 kV ESD Peak pulse current (t = 8/20μs)3) I – – 8 A p PP Peak pulse power (t = 8/20μs)3) P – – 65 W p PK Operating temperature range T -40 – 125 °C OP Storage temperature T -65 – 150 °C stg 1) Device is electrically symmetrical 2) V according to IEC61000-4-2 ESD 3) I according to IEC61000-4-5 PP Attention:Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 Electrical Characteristics at T = 25 °C, unless otherwise specified A (cid:10)(cid:5) (cid:10) (cid:17)(cid:17) (cid:10) (cid:15)(cid:16)(cid:17) (cid:11)(cid:2) (cid:11)(cid:2) (cid:2)(cid:5) (cid:19)(cid:19)(cid:19) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:4)(cid:7)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:7)(cid:12)(cid:13)(cid:14) (cid:11)(cid:10) (cid:10)(cid:5) (cid:19)(cid:19)(cid:19) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:4)(cid:7)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:11)(cid:10) (cid:2)(cid:7) (cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:10)(cid:7) (cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:2) (cid:7)(cid:18) (cid:2)(cid:15)(cid:16)(cid:17)(cid:2)(cid:3)(cid:4) (cid:2)(cid:6) (cid:2)(cid:7)(cid:8)(cid:9) (cid:10)(cid:7)(cid:8)(cid:9) (cid:2)(cid:7) (cid:2)(cid:5) (cid:10)(cid:7)(cid:8)(cid:9) (cid:2)(cid:7)(cid:8)(cid:9) (cid:2)(cid:6) (cid:2)(cid:3)(cid:4) (cid:2)(cid:5)(cid:18) (cid:2) (cid:15)(cid:16)(cid:17) (cid:7)(cid:12)(cid:13)(cid:14) (cid:19)(cid:19)(cid:19) (cid:19)(cid:20)(cid:18)(cid:6)(cid:21)(cid:22)(cid:16)(cid:8)(cid:4)(cid:13)(cid:15)(cid:22)(cid:15)(cid:11)(cid:6)(cid:18)(cid:16)(cid:13) (cid:2)(cid:7)(cid:8)(cid:9)(cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:5)(cid:3)(cid:4)(cid:26)(cid:22)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13)(cid:8)(cid:21)(cid:6)(cid:27)(cid:28) (cid:2)(cid:3)(cid:4) (cid:19)(cid:19)(cid:19) (cid:25)(cid:4)(cid:22)(cid:12)(cid:12)(cid:13)(cid:4)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:11)(cid:10) (cid:2)(cid:6) (cid:19)(cid:19)(cid:19) (cid:24)(cid:3)(cid:10)(cid:7)(cid:22)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:2)(cid:5)(cid:18) (cid:19)(cid:19)(cid:19) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:4)(cid:7)(cid:8)(cid:16)(cid:10)(cid:6)(cid:21)(cid:23)(cid:22)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:11)(cid:2) (cid:7) (cid:2)(cid:7)(cid:18) (cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:16)(cid:10)(cid:6)(cid:21)(cid:23)(cid:22)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:11)(cid:2) (cid:12)(cid:13)(cid:14) (cid:11)(cid:10) (cid:2)(cid:15)(cid:16)(cid:17) (cid:19)(cid:19)(cid:19) (cid:25)(cid:29)(cid:30)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:10)(cid:17)(cid:17) (cid:10)(cid:7)(cid:8)(cid:9) (cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:5)(cid:3)(cid:4)(cid:26)(cid:22)(cid:18)(cid:12)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11)(cid:8)(cid:21)(cid:6)(cid:27)(cid:28) (cid:10) (cid:10)(cid:17)(cid:17) (cid:19)(cid:19)(cid:19) (cid:30)(cid:13)(cid:6)(cid:26)(cid:8)(cid:23)(cid:17)(cid:10)(cid:15)(cid:13)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:15)(cid:16)(cid:17) (cid:10)(cid:15)(cid:16)(cid:17) (cid:19)(cid:19)(cid:19) (cid:25)(cid:29)(cid:30)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:10)(cid:7) (cid:19)(cid:22)(cid:3)(cid:7)(cid:13)(cid:31) !(cid:6)(cid:4)(cid:6)(cid:16)(cid:11)(cid:13)(cid:4)(cid:22)(cid:15)(cid:11)(cid:22)(cid:16)(cid:31) (cid:17)(cid:4)(cid:9)(cid:13)(cid:31)(cid:5)(cid:22)(cid:11)!(cid:31)(cid:15)(cid:18)(cid:6)(cid:23)"(cid:6)(cid:16)(cid:26)(cid:31)#(cid:22)$(cid:7)(cid:22)(cid:4)(cid:13)(cid:16)(cid:11)(cid:22)(cid:3)(cid:18)(cid:6)(cid:10)(cid:28)(cid:15)(cid:9)(cid:12) Figure2-1 Definitions of electrical characteristics FinalData Sheet 4 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Characteristics Table2-2 DC Characteristics at T = 25°C, unless otherwise specified1) A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Reverse working voltage V – – 3.3 V RWM Reverse current I – – 50 nA V =3.3V R R Trigger voltage V 3.65 – – V t1 Holding voltage V 3.65 4.4 – V I =10mA h R 1) Device is electrically symmetrical Table2-3 AC Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Line capacitance C – 14 20 pF V = 0V, f = 1MHz L R Table2-4 ESD and Surge Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Clamping voltage1) Pin 1 to GND V – 7 – V I =16A CL TLP – 9 – I =30A TLP Clamping voltage1) GND to Pin 1 – 7.5 – I =16A TLP – 9 – I =30A TLP Clamping voltage2) – 4.5 5.8 I =1A PP – 6.8 8.1 I =8A PP Dynamic resistance1) R – 0.13 – Ω DYN 1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z =50Ω, t =100ns, t =0.6ns, I and V averaging window: t =30ns to t =60ns, extraction of 0 p r, TLP TLP 1 2 dynamic resistance using least squares fit of TLP characteristic between I =5A and I =40A. Please refer to TLP1 TLP2 Application Note AN210 [1] 2) I according to IEC61000-4-5 (t =8/20 µs) PP p FinalData Sheet 5 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Characteristics 2.2 Typical Characteristics at T = 25 °C, unless otherwise specified A -5 10 -6 10 -7 10 -8 10 ] A [ R -9 I 10 -10 10 -11 10 -12 10 -4 -3 -2 -1 0 1 2 3 4 V [V] R Figure2-2 Reverse current: I =f(V ) R R 1000 100 ] A n 10 [ R I 1 0.1 -50 -25 0 25 50 75 100 125 T [°C] A Figure2-3 Reverse current: I =f(T ), V =3.3V R A R FinalData Sheet 6 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Characteristics 20 15 ] F p [ L C 10 5 -4 -3 -2 -1 0 1 2 3 4 V [V] R Figure2-4 Line capacitance: C =f(V ), f=1MHz L R FinalData Sheet 7 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Characteristics 60 30 ESD207-B1-02series R DYN 50 25 40 20 30 15 R = 0.13 Ω DYN 20 10 ] 10 5 V k [ C ] E A VI [ 0 0 P t L n T e I al v -10 -5 ui q E -20 -10 R = 0.14 Ω DYN -30 -15 -40 -20 -50 -25 -60 -30 -20 -15 -10 -5 0 5 10 15 20 V [V] TLP Figure2-5 Clamping voltage (TLP): I =f(V ) according ANSI/ESD STM5.5.1-Electrostatic Discharge TLP TLP Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z =50Ω, 0 t =100ns, t =0.6ns, I and V averaging window: t =ns to t =60ns, extraction of p r TLP TLP 1 2 dynamic resistance using squares fit to TLP characteristics between I =5A and TLP1 I =40A. Please refer to Application Note AN210 [1] TLP2 FinalData Sheet 8 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Characteristics 11 ESD207-B1-02series R 10 DYN 9 8 7 6 5 4 R = 0.3 Ω DYN 3 2 1 ] A [ 0 P P I -1 -2 -3 -4 R = 0.4 Ω DYN -5 -6 -7 -8 -9 -10 -11 -15 -10 -5 0 5 10 15 V [V] CL Figure2-6 Pulse current (IEC61000-4-5) versus clamping voltage: I =f(V ) PP CL FinalData Sheet 9 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Characteristics 40 30 V = 38.1 [V] CL-max-peak 20 ] V = 7.7 [V] V CL-30ns-peak [ L C 10 V 0 -10 -100 0 100 200 300 400 500 600 700 800 900 t [ns] p Figure2-7 IEC61000-4-2 : V =f(t), 8kV positive pulse from pin 1 to pin 2 CL 10 0 V] -10 [ CL VCL-max-peak = -37.5 [V] V -20 V = -6.9 [V] CL-30ns-peak -30 -40 -100 0 100 200 300 400 500 600 700 800 900 t [ns] p Figure2-8 IEC61000-4-2 : V =f(t), 8kV negative pulse from pin 1 to pin 2 CL FinalData Sheet 10 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Characteristics 70 60 50 40 V = 61.3 [V] CL-max-peak 30 ] V = 8.3 [V] V CL-30ns-peak [ 20 L C V 10 0 -10 -20 -30 -100 0 100 200 300 400 500 600 700 800 900 t [ns] p Figure2-9 IEC61000-4-2 : V =f(t), 15kV positive pulse from pin 1 to pin 2 CL 30 20 10 0 -10 ] V [ -20 L C V = -65.0 [V] V CL-max-peak -30 V = -7.6 [V] CL-30ns-peak -40 -50 -60 -70 -100 0 100 200 300 400 500 600 700 800 900 t [ns] p Figure2-10 IEC61000-4-2 : V =f(t), 15kV negative pulse from pin 1 to pin 2 CL FinalData Sheet 11 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Application Information 3 Application Information e g a t ol Time V +Vcc Audio_out single ended ESD-strike ESD-strike Audio_in Headset PCB line cable tne e o Audio Amp. s dh ap de er- Ha o -Vcc i E D Headset con. Charge D +Vcc e.g. 3.5mm jack Pump S E ESD3V3S1B-02LS_Application.vsd Figure3-1 Single line, bi-directional ESD / Transient protection FinalData Sheet 12 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Package Information 4 Package Information 4.1 TSSLP-2-3 Top view Bottom view 0.31+-00..0021 0.32±0.05 2 5 55 ±0.0 0.3 62 0. 1 Cathode 0.05 MAX. 0.26±0.0351) 1)35 0 marking 0. ± 2 0. 1) Dimension applies to plated terminals TSSLP-2-3, -4-PO V01 Figure4-1 TSSLP-2-3: Package overview (dimension in mm) 0.32 0.24 0.27 0.19 4 1 0. 2 7 6 5 0. 0. 9 1 9 0. 0.24 0.1 Copper Solder mask Stencil apertures TSSLP-2-3, -4-FP V02 Figure4-2 TSSLP-2-3: Footprint (dimension in mm) g 4 0.35 Tape type Ex Ey Punched Tape 0.43 0.73 y E Embossed Tape 0.37 0.67 8 Deliveries can be both tape types (no selection possible). Specification allows identical processing (pick & place) by users. Cathode Ex marking TSSLP-2-3, -4-TP V03 Figure4-3 TSSLP-2-3: Tape information (dimension in mm) Type code 1 Cathode marking TSSLP-2-3, -4-MK V01 Figure4-4 TSSLP-2-3: Marking (example) FinalData Sheet 13 Revision 1.3, 2013-12-19

ESD207-B1-02 Series Package Information 4.2 TSLP-2-19 Top view Bottom view 0.31+0.01 -0.02 0.05 MAX. 0.6±0.05 5 2 0 0.65±0. 1 1±0.05 Cathode 0.5±0.0351) 1)35 0 marking 0. ± 5 2 1) Dimension applies to plated terminals 0. TSLP-2-19,-20-PO V01 Figure4-5 TSLP-2-19: Package outline(dimension in mm), proposal 0.6 5 0.45 8 3 2 0. 0. 3 0. 3 1 9 0. 8 3 0.35 0.28 0. Copper Solder mask Stencil apertures TSLP-2-19, -20-FP V01 Figure4-6 TSLP-2-19: Footprint (dimension in mm), proposal 4 0.4 Cathode marking 16 1. 8 0.76 TSLP-2-19, -20-TP V02 Figure4-7 TSLP-2-19: Tape information (dimension in mm), proposal Type code 12 Cathode marking TSLP-2-19, -20-MK V01 Figure4-8 TSLP-2-19: Marking (example) FinalData Sheet 14 Revision 1.3, 2013-12-19

ESD207-B1-02 Series References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages FinalData Sheet 15 Revision 1.3, 2013-12-19

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