TVS Diode Transient Voltage Suppressor Diodes ESD200-B1-CSP0201 Low Clamping Voltage TVS Diode in a Thin 0201 Chip Scale Package ESD200-B1-CSP0201 Data Sheet Revision 1.0, 2013-05-21 Final Power Management & Multimarket

Edition 2013-05-21 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

ESD200-B1-CSP0201 Revision History: Revision 0.9.3, 2012-03.13 Page or Item Subjects (major changes since previous revision) Revision 1.0, 2013-05-21 All Status change to final Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLIDFLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYOYUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 3 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Low Clamping Voltage TVS Diode in a Thin 0201 Chip Scale Package 1 Low Clamping Voltage TVS Diode in a Thin 0201 Chip Scale Package 1.1 Features • ESD / Transient protection of susceptible I/O lines to: – IEC61000-4-2 (ESD): ±16kV (air/contact discharge) – IEC61000-4-5 (surge): ±3A (8/20μs)) • Low clamping voltage • Low dynamic resistance: R ≤0.2Ω typ. DYN • Supports applications with signal voltage between -5.5V and 5.5V max. • Line capacitance: C =6.5pF L • Minimized overshoot due to extremely low parasitic inductance of chip scale package • Miniature form factor (XY) = 0201 (0.58mmx0.28mm) • Thin 0.15mm package thickness to allow direct integration into modules • Optimized assembly: its bidirectional and symmetric I/V characteristics allow placement on the PCB with no danger of polarity orientation issues 1.2 Application Examples • ESD Protection of highly susceptible IC/ASICs in audio, headset, human digital interfaces • Dedicated solution to boost space saving and high performance in miniaturized modern electronics 1.3 Product Description a) Pin configuration top view b) Schematic diagram Configuration_Schematic_Diagram.vst.vsd Figure1-1 Pin Configuration and Schematic Diagram Table1-1 Ordering Information Type Package Configuration Marking code ESD200-B1-CSP0201 WLL-2-1 1 line, bi-directional A1) 1) The device does not have any marking or date code on the device backside. The Marking code is on pad side. Final Data Sheet 4 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Characteristics 2 Characteristics 2.1 Maximum Ratings Table2-1 Maximum Ratings at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit Min. Typ. Max. ESD1) V kV ESD Contact discharge -16 - 16 Air discharge -16 - 16 Peak pulse current (t = 8/20μs)2) I -3 - 3 A p PP Operating temperature range T -40 - 125 °C OP Storage temperature T -65 - 150 °C stg 1) V according to IEC61000-4-2 (R = 330, C = 150 pF discharge network) ESD 2) I according to IEC61000-4-5 (t = 8/20 μs) PP p Attention:Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Electrical Characteristics at T = 25 °C, unless otherwise specified A (cid:9)(cid:3) (cid:9) (cid:12)(cid:12) (cid:9) (cid:10)(cid:11)(cid:12) (cid:2)(cid:3) (cid:17)(cid:17)(cid:17) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:4)(cid:7)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:9)(cid:3) (cid:17)(cid:17)(cid:17) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:4)(cid:7)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:8)(cid:2) (cid:2)(cid:4) (cid:17)(cid:17)(cid:17) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:4) (cid:9)(cid:4) (cid:17)(cid:17)(cid:17) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:5)(cid:6)(cid:7) (cid:8)(cid:9) (cid:8)(cid:9) (cid:8)(cid:2) (cid:2) (cid:4)(cid:16) (cid:9) (cid:4) (cid:2) (cid:2) (cid:2) (cid:10)(cid:11)(cid:12) (cid:15)(cid:4) (cid:4)(cid:13)(cid:14) (cid:9) (cid:2)(cid:4) (cid:4)(cid:13)(cid:14) (cid:2)(cid:3) (cid:9)(cid:4)(cid:13)(cid:14) (cid:2)(cid:4)(cid:13)(cid:14)(cid:2)(cid:15)(cid:4) (cid:2)(cid:3)(cid:16) (cid:9) (cid:2) (cid:4) (cid:10)(cid:11)(cid:12) (cid:8)(cid:2) (cid:4)(cid:5)(cid:6)(cid:7) (cid:17)(cid:17)(cid:17) (cid:19)(cid:27)(cid:18)(cid:6)(cid:28)(cid:20)(cid:16)(cid:8)(cid:4)(cid:13)(cid:15)(cid:20)(cid:15)(cid:11)(cid:6)(cid:18)(cid:16)(cid:13) (cid:8)(cid:2) (cid:2)(cid:4)(cid:13)(cid:14)(cid:17)(cid:17)(cid:17) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:5)(cid:3)(cid:4)(cid:30)(cid:20)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13)(cid:8)(cid:28)(cid:6)(cid:31)(cid:26) (cid:8)(cid:9) (cid:4)(cid:5)(cid:6)(cid:7) (cid:8)(cid:9) (cid:2)(cid:15)(cid:4) (cid:17)(cid:17)(cid:17) (cid:24)(cid:4)(cid:13)(cid:6)(cid:30)(cid:7)(cid:3)(cid:5)(cid:18)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:2)(cid:3)(cid:16) (cid:17)(cid:17)(cid:17) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:4)(cid:7)(cid:8)(cid:16)(cid:10)(cid:6)(cid:28)(cid:29)(cid:20)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:2)(cid:4)(cid:16) (cid:17)(cid:17)(cid:17) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:16)(cid:10)(cid:6)(cid:28)(cid:29)(cid:20)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:2)(cid:10)(cid:11)(cid:12) (cid:17)(cid:17)(cid:17) !"(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:9)(cid:4)(cid:13)(cid:14) (cid:17)(cid:17)(cid:17) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:5)(cid:3)(cid:4)(cid:30)(cid:20)(cid:18)(cid:12)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11)(cid:8)(cid:28)(cid:6)(cid:31)(cid:26) (cid:9)(cid:12)(cid:12) (cid:9)(cid:4) (cid:17)(cid:17)(cid:17) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:9) (cid:9)(cid:12)(cid:12) (cid:17)(cid:17)(cid:17) "(cid:13)(cid:6)(cid:30)(cid:8)(cid:29)(cid:17)(cid:10)(cid:15)(cid:13)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:10)(cid:11)(cid:12) (cid:9)(cid:10)(cid:11)(cid:12) (cid:17)(cid:17)(cid:17) !"(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:9)(cid:4) (cid:19)(cid:20)(cid:3)(cid:7)(cid:13)(cid:21)(cid:22)(cid:23)(cid:6)(cid:4)(cid:6)(cid:16)(cid:11)(cid:13)(cid:4)(cid:20)(cid:15)(cid:11)(cid:20)(cid:16)(cid:21)(cid:22)(cid:17)(cid:4)(cid:9)(cid:13)(cid:21)(cid:24)(cid:20)(cid:25)(cid:7)(cid:20)(cid:4)(cid:13)(cid:16)(cid:11)(cid:20)(cid:3)(cid:18)(cid:6)(cid:10)(cid:26)(cid:15)(cid:9)(cid:12) Figure2-1 Definitions of electrical characteristics Final Data Sheet 5 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Characteristics Table2-2 DC Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Reverse working voltage V -5.5 - 5.5 V RWM Breakdown voltage V 6 - 10 V I =1mA BR BR Reverse current I - 0.1 100 nA V =5.5V R R Table2-3 RF Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Line capacitance C 6.5 pF V =0V, f =1MHz L R Table2-4 ESD Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Clamping voltage1) V - 12 - V V =8kV CL ESD contact discharge Clamping voltage2) - 10 - I =1A TLP - 13 - I =16A TLP Clamping voltage3) - 10 - I =1A PP - 12.5 - I =3A PP Dynamic resistance2) R - 0.2 - Ω DYN 1) V according to IEC61000-4-2 (R=330Ω, C=150pF discharge network) ESD 2) ANSI/ESDSTM5.5.1-Electrostatistic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z =50Ω, t =100ns, t =0.6ns, I and V average window: t =30ns to t =60ns, extraction of dynamic 0 p r TLP TLP 1 2 resistance using squares fit to TLP characteristics between I =2.5A and I =17A. Please refer to Application Note TLP1 TLP2 AN210[1] 3) I according to IEC61000-4-5 (t =8/20μs) PP p Final Data Sheet 6 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Typical Characteristics 3 Typical Characteristics Curves specified at T =25°C, unless otherwise specified A -3 10 -4 10 -5 10 -6 10 -7 10 ] A [ R 10-8 I -9 10 -10 10 -11 10 -12 10 -10 -8 -6 -4 -2 0 2 4 6 8 10 V [V] R Figure3-1 Reverse current: I =f(V ) R R +1 10 ] A +0 n 10 [ R I -1 10 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 T [°C] A Figure3-2 Reverse current: I =f(T ), V =5.5V R A R Final Data Sheet 7 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Typical Characteristics 9 8.9 8.8 8.7 8.6 ] V [ 8.5 R B V 8.4 8.3 8.2 8.1 8 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 T [°C] A Figure3-3 Reverse voltage: V =f(T ), I =1mA BR A R 10 9 8 7 6 ] F p 5 [ L C 4 3 2 1 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 V [V] R Figure3-4 Line capacitance: C =f(V ), f=1MHz L R Final Data Sheet 8 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Typical Characteristics 30 15 ESD200-B1-CSP0201 R DYN 25 12.5 20 10 15 7.5 R = 0.20 Ω DYN 10 5 ] 5 2.5 V k [ C ] E A VI [ 0 0 P t L n T e I al v -5 -2.5 ui q E -10 -5 R = 0.20 Ω DYN -15 -7.5 -20 -10 -25 -12.5 -30 -15 -20 -15 -10 -5 0 5 10 15 20 V [V] TLP Figure3-5 Clamping voltage (TLP): I =f(V ) according ANSI/ESDSTM5.5.1-Electrostatistic TLP TLP Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z =50Ω, t =100ns, t =0.6ns, I and V average window: t =30ns to t =60ns, 0 p r TLP TLP 1 2 extraction of dynamic resistance using squares fit to TLP characteristics between I =2.5A and I =17A. Please refer to Application Note AN210[1] TLP1 TLP2 Final Data Sheet 9 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Typical Characteristics 5 ESD200-B1-CSP0201 R DYN 4 3 R = 1 Ω DYN 2 1 ] A [ 0 P P I -1 -2 R = 1 Ω DYN -3 -4 -5 -20 -15 -10 -5 0 5 10 15 20 V [V] CL Figure3-6 Pulse current (IEC61000-4-5) versus clamping voltage: I =f(V ) PP CL Final Data Sheet 10 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Typical Characteristics 50 Scope: 6 GHz, 20 GS/s 45 40 V = 25 V 35 CL-max-peak V = 12 V 30 CL-30ns-peak V] 25 [ L C 20 V 15 10 5 0 -5 -100 0 100 200 300 400 500 600 700 800 900 t [ns] p Figure3-7 IEC61000-4-2: V =f(t), +8kV pulse CL 5 0 -5 -10 -15 V] -20 [ L C -25 V -30 V = -24 V CL-max-peak -35 V = -11 V CL-30ns-peak -40 -45 Scope: 6 GHz, 20 GS/s -50 -100 0 100 200 300 400 500 600 700 800 900 t [ns] p Figure3-8 IEC61000-4-2: V =f(t), -8kV pulse CL Final Data Sheet 11 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Typical Characteristics 50 Scope: 6 GHz, 20 GS/s 45 40 V = 34 V 35 CL-max-peak V = 13 V 30 CL-30ns-peak V] 25 [ L C 20 V 15 10 5 0 -5 -100 0 100 200 300 400 500 600 700 800 900 t [ns] p Figure3-9 IEC61000-4-2: V =f(t), +15kV pulse CL 5 0 -5 -10 -15 V] -20 [ L C -25 V -30 V = -35 V CL-max-peak -35 V = -12 V CL-30ns-peak -40 -45 Scope: 6 GHz, 20 GS/s -50 -100 0 100 200 300 400 500 600 700 800 900 t [ns] p Figure3-10 IEC61000-4-2: V =f(t), -15kV pulse CL Final Data Sheet 12 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Application Information 4 Application Information Protected data line with signal level r cto -5.5 V up to +5.5 V (bi-directional) ESD ne I/O sensitive n o device C 1 The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible . Pin 2(or pin 1) should be connected directly to a ground plane on the board. 2 Application_ESD200-B1-CSP0201.vsd Figure4-1 Single line, bi-directional ESD / Transient protection Final Data Sheet 13 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 Package 5 Package Figure5-1 WLL-2-1 Package outline (dimension in mm) 0.32 0.24 0.27 0.19 4 1 0. 2 7 6 5 0. 0. 9 1 9 0. 0.24 0.1 Copper Solder mask Stencil apertures Figure5-2 WLL-2-1 Footprint (dimension in mm) 0.23 8 6 0. 8 2 0.21 0.35 Deliveries can be in Embossed Tape with or without vacuum hole (no selection possible). Specification allows identical processing (pick & place) by users. SG-WLL-2-1-TP V02 Figure5-3 WLL-2-1 Packing (dimension in mm) Marking on pad-side Type code SG-WLL-2-1-MK V01 Figure5-4 WLL-2-1 Marking (example) Final Data Sheet 14 Revision 1.0, 2013-05-21

ESD200-B1-CSP0201 References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology Final Data Sheet 15 Revision 1.0, 2013-05-21

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