ICGOO在线商城 > 分立半导体产品 > 二极管 - 整流器 - 单 > ES2G-E3/52T
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ES2G-E3/52T产品简介:
ICGOO电子元器件商城为您提供ES2G-E3/52T由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 ES2G-E3/52T价格参考¥0.49-¥0.95。VishayES2G-E3/52T封装/规格:二极管 - 整流器 - 单, 标准 表面贴装 二极管 400V 2A DO-214AA(SMB)。您可以下载ES2G-E3/52T参考资料、Datasheet数据手册功能说明书,资料中有ES2G-E3/52T 详细功能的应用电路图电压和使用方法及教程。
Vishay Semiconductor Diodes Division生产的ES2G-E3/52T是一款高性能的肖特基整流二极管,广泛应用于需要高效、低功耗和快速开关性能的电路中。以下是其主要应用场景: 1. 电源管理: - 直流-直流转换器:在降压或升压型DC-DC转换器中,ES2G-E3/52T能够提供高效的整流功能,减少功率损耗,提高转换效率。 - 线性稳压器:用于线性稳压器中的保护和整流,确保输出电压稳定。 2. 通信设备: - 基站电源:在无线通信基站中,该二极管用于电源模块,确保电力供应的高效性和稳定性。 - 数据传输设备:如路由器、交换机等网络设备中,ES2G-E3/52T可以用于电源部分,保证设备的可靠运行。 3. 消费电子: - 笔记本电脑适配器:在便携式电子设备的充电器中,该二极管可以提高充电效率,延长电池寿命。 - 智能手机和平板电脑:用于内部电源管理和充电电路,确保设备的高效能和低发热。 4. 工业自动化: - 电机驱动器:在工业控制系统的电机驱动器中,ES2G-E3/52T可以用于整流和保护电路,防止电流反向流动。 - PLC(可编程逻辑控制器):用于PLC的电源模块,确保控制系统稳定运行。 5. 汽车电子: - 车载充电系统:在电动汽车和混合动力汽车的车载充电器中,该二极管可以提高充电效率,减少能量损失。 - 辅助电源系统:用于汽车内的各种辅助电源模块,如车灯、音响系统等,确保这些系统的稳定供电。 6. 太阳能逆变器: - 光伏系统:在太阳能光伏发电系统中,ES2G-E3/52T用于逆变器的整流部分,将直流电转换为交流电,提高系统的整体效率。 总之,ES2G-E3/52T凭借其低正向压降、快速恢复时间和高可靠性,适用于多种需要高效整流和低功耗的应用场景。
参数 | 数值 |
产品目录 | |
描述 | DIODE ULTRA FAST 400V 2A DO214AA整流器 2.0 Amp 400V 35ns |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | Vishay Semiconductor Diodes DivisionVishay Semiconductors |
产品手册 | |
产品图片 | |
rohs | RoHS 合规性豁免无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,整流器,Vishay Semiconductors ES2G-E3/52T- |
数据手册 | http://www.vishay.com/doc?88588 |
产品型号 | ES2G-E3/52TES2G-E3/52T |
不同If时的电压-正向(Vf) | 1.1V @ 2A |
不同 Vr、F时的电容 | 15pF @ 4V,1MHz |
不同 Vr时的电流-反向漏电流 | 10µA @ 400V |
二极管类型 | 标准 |
产品 | Ultra Fast Recovery Rectifiers |
产品目录绘图 | |
产品目录页面 | |
产品种类 | 整流器 |
供应商器件封装 | DO-214AA(SMB) |
其它名称 | ES2G-E3/52TGICT |
包装 | 剪切带 (CT) |
反向恢复时间(trr) | 50ns |
反向电压 | 400 V |
反向电流IR | 10 uA |
商标 | Vishay Semiconductors |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | DO-214AA,SMB |
封装/箱体 | SMB |
工作温度-结 | -50°C ~ 150°C |
工厂包装数量 | 750 |
恢复时间 | 35 ns |
最大工作温度 | + 150 C |
最大浪涌电流 | 50 A |
最小工作温度 | - 55 C |
标准包装 | 1 |
正向电压下降 | 1.1 V |
正向连续电流 | 2 A |
热阻 | 25°C/W Jl |
电压-DC反向(Vr)(最大值) | 400V |
电流-平均整流(Io) | 2A |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
零件号别名 | ES2G-E3/5BT |
ES2F, ES2G www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 SMB (DO-214AA) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for PRIMARY CHARACTERISTICS consumer, computer, and telecommunication. I 2.0 A F(AV) VRRM 300 V, 400 V MECHANICAL DATA IFSM 50 A Case: DO-214AA (SMB) t 35 ns Molding compound meets UL 94 V-0 flammability rating rr Base P/N-E3 - RoHS-compliant, commercial grade V at I 1.1 V F F Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified T max. 150 °C J (“_X” denotes revision code e.g. A, B,.....) Package DO-214AA (SMB) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL ES2F ES2G UNIT Device marking code EF EG Maximum repetitive peak reverse voltage V 300 400 V RRM Working peak reverse voltage V 225 300 V RWM Maximum RMS voltage V 210 280 V RMS Maximum average forward rectified current at T = 110 °C I 2.0 A L F(AV) Peak forward surge current 8.3 ms single half sine-wave I 50 A superimposed on rated load FSM Operating junction and storage temperature range T , T -55 to +150 °C J STG Revision: 22-Mar-18 1 Document Number: 88588 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL ES2F ES2G UNIT Maximum instantaneous forward voltage 2.0 A V (1) 1.1 V F T = 25 °C 10 A Maximum reverse current at V I µA RRM R T = 100 °C 200 A Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, t 35 ns I = 0.25 A rr rr Maximum reverse recovery time IF = 1.0 A, dI/dt = 100 A/μs, t 50 ns V = 30 V, I = 0.1 I rr R rr RM Maximum reverse recovery current IF = 1.0 A, dI/dt = 100 A/μs, I 3.0 A V = 30 V, I = 0.1 I RM R rr RM Maximum stored charge IF = 1.0 A, dI/dt = 100 A/μs, Q 50 nC V = 30 V, I = 0.1 I rr R rr RM Typical junction capacitance 4.0 V, 1 MHz C 15 pF J Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL ES2F ES2G UNIT R (1) 75 JA Maximum thermal resistance °C/W R (1) 25 JL Note (1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES2G-E3/52T 0.096 52T 750 7" diameter plastic tape and reel ES2G-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel ES2GHE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel ES2GHE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 22-Mar-18 2 Document Number: 88588 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 3.0 1000 A) Resistive or Inductive Load ent ( age TJ = 150 °C ward Rectified Curr 21..00 eous Reverse LeakCurrent (µA) 11000 TTJ J= = 1 12050 ° °CC age For stantan 1 TJ = 25 °C er In v A 0 0.1 80 90 100 110 120 130 140 150 0 20 40 60 80 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 60 200 8.3 ms Single Half Sine-Wave Current (A) 4500 at TL = 110 °C /egrahCsn/Cn em 160 at 5 A, 50 A/µs ge deiT y 120 at 2 A, 20 A/µs ur rore ak Forward S 2300 tS derevoceRvoceR esreve 8400 aaaatttt 2511 AAAA,,,, 25110000 00AA /A/Aµµ//ssµµss Pe 10 R t rr Q 0 0 rr 1 10 100 25 50 75 100 125 150 175 Number of Cycles at 60 Hz Junction Temperature (°C) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Reverse Switching Characteristics 100 100 T = 25 °C )A f =J 1.0 MHz ( tnerruC draw 10 TJ = 125T °JC = 150 °C )Fp( ecnatic Vsig = 50 mVp-p ro 1 ap 10 F a suoena 0.1 TJ = 100 °C C noitcn tna TJ = 25 °C uJ ts n I 0.01 1 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance Revision: 22-Mar-18 3 Document Number: 88588 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.086 (2.20) 0.155 (3.94) 0.077 (1.95) 0.130 (3.30) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.008 (0.2) 0.030 (0.76) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 22-Mar-18 4 Document Number: 88588 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: ES2F/2 ES2F/2CT ES2F/51T ES2F/52T ES2F/55T ES2F/5BT ES2F-E3/2CT ES2F-E3/51T ES2F-E3/52T ES2F- E3/55T ES2F-E3/5BT ES2FHE3/2CT ES2FHE3/52T ES2FHE3/55T ES2FHE3/5BT ES2G/2BT ES2G/2CT ES2G/51T ES2G/52T ES2G/55T ES2G/5BT ES2G-E3/2CT ES2G-E3/51T ES2G-E3/52T ES2G-E3/55T ES2G- E3/5BT ES2GHE3/2CT ES2GHE3/52T ES2GHE3/55T ES2GHE3/5BT ES2G/1T ES2G-E3/1T ES2GHE3_A/I ES2GHE3_A/H ES2FHE3_A/I ES2FHE3_A/H ES2F-M3/5BT ES2F-M3/52T