ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction Available • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 Anode Cathode • Material categorization: for definitions of complianc e please see www.vishay.com/doc?99912 ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3DDD 333D For use in high frequency rectification and freewheeling application in switching mode converters and inverters fo r 3D Models consumer, computer, automotive, and telecommunication. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating IF(AV) 2.0 A Base P/N-E3 - RoHS-compliant, commercial grade V 50 V, 100 V, 150 V, 200 V Base P/N-M3 - halogen-free, RoHS-compliant, commercial RRM grade I 50 A FSM Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified trr 20 ns Base P/NHME3_X - halogen-free, RoHS-compliant, an d V 0.90 V AEC-Q101 qualified F (“_X” denotes revision code e.g. A, B, .....) T max. 150 °C J Terminals: matte tin plated leads, solderable per Package SMB (DO-214AA) J-STD-002 and JESD 22-B102 Circuit configuration Single E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL ES2A ES2B ES2C ES2D UNIT Device marking code EA EB EC ED Maximum repetitive peak reverse voltage V 50 100 150 200 V RRM Maximum RMS voltage V 35 70 105 140 V RMS Maximum DC blocking voltage V 50 100 150 200 V DC Maximum average forward rectified current at T = 110 °C I 2.0 A L F(AV) Peak forward surge current 8.3 ms single half sine-wave I 50 A superimposed on rated load FSM Operating junction and storage temperature range T , T -55 to +150 °C J STG Revision: 03-Mar-2020 1 Document Number: 88587 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL ES2A ES2B ES2C ES2D UNIT Maximum instantaneous forward 2.0 A V (1) 0.90 V voltage F Maximum DC reverse current at rated TA = 25 °C 10 I μA DC blocking voltage T = 100 °C R 350 A I = 0.5 A, I = 1.0 A, Max. reverse recovery time F R t 20 ns l = 0.25 A rr rr Maximum reverse recovery time IF = 2.0 A, VR = 30 V, TJ = 25 °C t 30 ns dI/dt = 50 A/μs, Ir = 10 % IRM TJ = 100 °C rr 50 Maximum stored charge IF = 2.0 A, VR = 30 V, TJ = 25 °C Q 10 nC dI/dt = 50 A/μs, Ir = 10 % IRM TJ = 100 °C rr 25 Typical junction capacitance 4.0 V, 1 MHz C 18 pF J Note (1) Pulse test: 300 ms pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL ES2A ES2B ES2C ES2D UNIT RθJA (1) 75 Typical thermal resistance °C/W RθJL (1) 20 Note (1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES2D-E3/52T 0.096 52T 750 7" diameter plastic tape and reel ES2D-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel ES2DHE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel ES2DHE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel ES2D-M3/52T 0.096 52T 750 7" diameter plastic tape and reel ES2D-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel ES2DHM3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel ES2DHM3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 03-Mar-2020 2 Document Number: 88587 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A Axis Title 3.0 10000 10000 orward Rectified Current (A) 21..00 2nd lineeous Reverse Current (mA) 1010010.00101 TTTTJJJJ==== 2 1115502 00°5C °°°CCC 1100000 1st line2nd line F Resistive or Inductive Load n Average 0.2" xC P0.oC.2p."Bp (e. 5Mr. 0Po aumdnm tAe drxe 5oa.ns0 mm) Instanta 0.00.0011 TJ= -40 °C 10 0 0 20 40 60 80 100 80 90 100 110 120 130 140 150 Percent of Rated Peak Reverse Voltage (%) Lead Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 60 60 8.3 ms Single Half Sine-Wave T = 25 °C J nt (A) 50 at TL = 110 °C F) 50 fV =si g1 =.0 5 M0 HmzVp-p e p e Curr 40 ance ( 40 Surg 30 pacit 30 ward 20 on Ca 20 k For uncti ea 10 J 10 P 0 0 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance Axis Title 100 100 10000 W) Junction to Ambient ent (A) TJ= 150 °C °e (C/ 2nd lines Forward Curr 101 TJ= T10J0= °1C25 °C 1000 mal Impedanc 10 u neo TJ= 25 °C 100 her 1 a 0.1 T Instant TJ= -40 °C nsient Mounted on 5.0 mm x 5.0 mm copper pad 0.01 10 Tra 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.1 10 1000 Instantaneous Forward Voltage (V) t -Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Transient Thermal Impedance Revision: 03-Mar-2020 3 Document Number: 88587 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.086 (2.20) 0.155 (3.94) 0.077 (1.95) 0.130 (3.30) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.008 (0.2) 0.030 (0.76) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 03-Mar-2020 4 Document Number: 88587 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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