EMX26 Transistors General purpose transistors (dual transistors) EMX26 (cid:122)Features (cid:122)External dimensions (Unit : mm) 1) Two 2SD2654 chips in a EMT package. EMX26 2) Mounting possible with EMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating 0.22 ((54)) ((23)) 0.50.51.01.6 (6) 1.2 (1) interference. 1.6 4) Mounting cost and area can be cut in half. 0.13 0.5 Each lead has same dimensions ROHM : EMT6 (cid:122)Structure Abbreviated symbol : X26 Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. (cid:122)Equivalent circuit EMX26 (3) (2) (1) Tr1 Tr2 (4) (5) (6) (cid:122)Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 12 V 0.15 A (DC) Collector current IC 0.2 A (Pulse) ∗1 Power dissipation Pd 150 (TOTAL) mW ∗2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse Pw=100ms. ∗2 120mW per element must not be exceeded. 1/3

EMX26 Transistors (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 12 − − V IE=10µA Collector cutoff current ICBO − − 0.3 µA VCB=50V Emitter cutoff current IEBO − − 0.3 µA VEB=12V Collector-emitter saturation voltage VCE(sat) − − 0.3 V IC/IB=50mA/5mA ∗ DC current transfer ratio hFE 820 − 2700 − VCE/IC=5V/1mA ∗ Transition frequency fT − 250 ∗− MHz VCE=5V, IE=−10mA, f=100MHz ∗ Output capacitance Cob − 3.5 − pF VCB=5V, IE=0A, f=1MHz ∗ Measured using pulse current. (cid:122)Packaging specifications Package Taping Code T2R Basic ordering Type unit (pieces) 8000 EMX26 (cid:122)Electrical characteristic curves 2.0 Ta=25°C 200 250µA 200 VCE=5V CURRENT : I(mA)C 11..26 2111....0864µµµµAAAA 1100....2086µµµµAAAA CURRENT : I(mA)C 112600 354430050500000µµµµµAAAAA 1250001µµ0AA0µA CURRENT : I(mA)C 1215050000 Ta=1°00C °25C−°25C OR 0.8 OR 80 50µA OR CT 0.4µA CT CT 2 COLLE 0.4 0.2µA COLLE 40 Ta=25°C COLLE 0.15 Measured 00 0.1 0.2 0.3 IB=00.4 0.5 00 using4 pulse cu8rrent 12 16 IB=020 0.20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics ( Ι ) characteristics ( ΙΙ ) characteristics 10000 Ta=25°C 10000 VCE=5V V)1000 Ta=25°C N : hFE 125000000000 Museinags uprueldsVeC cEu=r1r0eVnt N : hFE 125000000000 25T°Ca=100°C Museinags uprueldse current GE : V (mCE(sat) 125000000 CURRENT GAI 125000000 35VV CURRENT GAI 125000000 −25°C URATION VOLTA 125000 IC / IB=215000 DC 50 DC 50 R SAT 5 O 20 20 ECT 2 100.2 0.5 1 2 5 10 20 50100200 100.2 0.5 1 2 5 10 20 50100200 COLL 01.2 0.5 1 2 5 10 20 50 100200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation voltage collector current ( Ι ) collector current ( ΙΙ ) vs. collector current ( Ι ) 2/3

EMX26 Transistors mV)1000 IC / IB=10 mV)10000 Ta=25°C mV)10000 IC/IB=10 V (CE(sat) 250000 V (BE(sat) 25000000 V (BE(sat) 25000000 Ta= −25°C GE : 100 GE : 1000 IC/IB=10 GE : 1000 25°C OLTA 50 Ta=100°C OLTA 500 20 OLTA 500 N V 25°C N V 50 N V 100°C ATIO 20 ATIO 200 ATIO 200 ATUR 10 −25°C ATUR 100 ATUR 100 R S 5 R S 50 R S 50 O O O ECT 2 ECT 20 ECT 20 OLL 1 OLL 10 OLL 10 C 0.2 0.5 1 2 5 10 20 50 100200 C 0.2 0.5 1 2 5 10 20 50 100200 C 0.2 0.5 1 2 5 10 20 50 100200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage Fig.8 Base-emitter saturation voltage Fig.9 Base-emitter saturation voltage vs. collector current ( ΙΙ ) vs. collector current ( Ι ) vs. collector current ( ΙΙ ) 1000 1000 100 F) Ta=25°C Ta=25°C NSITION FREQUENCY : f (MHz)T 1251250005000000 OR OUTPUT CAPACITANCE : C (pob 1251250005000000 fI=E=10MAHz ΩRon : () 0125.5125000 fVR=iL=1=1k1H0k0zΩmV(rms) TRA 2 TVMaCeE=a=2s55uV°rCed OLLECT 2 0.2 1 using pulse current C 1 0.1 −1 −2 −5 −10 −20 −50−100−200 −500−1000 0.1 0.2 0.5 1 2 5 10 20 50 100 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 EMITTER CURRENT : IE (mA) COLLRCTOR TO BASE VOLTAGE : VCB (V) IB (mA) Fig.10 Gain bandwidth product Fig.11 Collector output capacitance Fig.12 Output on resistance vs. emitter current vs. collector-base voltage vs. base current 3/3

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1

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