EMIF03-SIM05F3 EMI filter with SWP protection for SIM interface Datasheet  production data Features ■ Lead-free package ■ Very low PCB space consumption ■ Very thin package: < 0.55 mm after reflow ■ High efficiency in ESD suppression IEC61000-4-2 level 4 ■ High reliability offered by monolithic integration WLCSP package (9 bumps) ■ High reduction of parasitic elements through integration and WLCSP packaging Complies with the following standards: Figure 1. Pin configuration (bump side) ■ IEC 61000-4-2 level 4 – ± 15 kV (air discharge) – ± 8 kV (contact discharge) SWP Application ■ Mobile phones Description The EMIF03-SIM05F3 is a highly integrated device designed to protect SIM interface and SWP line against ESD transients and EMI emission. The device is the ideal fit for applications using Figure 2. Functional schematic NFC. November 2012 Doc ID 023284 Rev 1 1/9 This is information on a product in full production. www.st.com 9

Characteristics EMIF03-SIM05F3 1 Characteristics T able 1. Absolute maximum ratings (T = 25 °C) amb Symbol Parameter Value Unit Internal pins (A3, B3, C3): ESD discharge IEC 61000-4-2(1), level 1 Air discharge 2 Contact discharge 2 V kV PP External pins (A1, A2, B1, C1, C2): ESD discharge IEC 61000-4-2, level 4 Air discharge 16 Contact discharge 16 T Maximum junction temperature 150 j T Operating temperature range - 30 to + 85 °C op T Storage temperature range - 55 to 150 stg 1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353, “IEC61000-4-2 standard testing”. Figure 3. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR I = Leakage current @V RM RM VVRCML == CSltaamndp-ionfgf vvoollttaaggee VCLVBR VRM IRM V I = Peak pulse current PP IPP T able 2. Electrical characteristics (T = 25 °C) amb Symbol Test conditions Min. Typ. Max. Unit I V = 3 V 100 nA RM RM V I = 1 mA 6 V BR R R1 R3 RST, DATA serial resistor 100 ,  R2 CLK serial resistor 47 Line capacitance on RST, DATA, CLK lines Cline Vline = 0 V, Vosc = 30 mV, F = 1 MHz 12 pF (measured under zero light conditions) Line capacitance on SWP line CSWP Vline = 0 V, Vosc = 30 mV, F = 1 MHz 2 3 pF (measured under zero light conditions) 2/9 Doc ID 023284 Rev 1

EMIF03-SIM05F3 Characteristics Figure 4. A ttenuation measurements C1-C3, Figure 5. Attenuation measurements A1-C2 A2-A3, B1-B3 S21(dB) S21(dB) 0.00 0.00 -5.00 -5.00 -10.00 -10.00 -15.00 -15.00 -20.00 -20.00 -25.00 -25.00 F(Hz) F(Hz) -30.00 100.0k 1.0M 10.0M 100.0M 1.0G -30.00 100.0k 1.0M 10.0M 100.0M 1.0G Data Clk Rst SWP Vcc Figure 6. A nalog Xtalk measurements Figure 7. Digital crosstalk measurements XTalk (dB) 0.00 -10.00 VtRC=L KtF== 3 2V ns Clk -20.00 -30.00 -40.00 Data -50.00 -60.00 -70.00 -80.00 -90.00 F(Hz) -100.00 -110.00 100.0k 1.0M 10.0M 100.0M 1.0G Clk-SWP Clk-Rst Rst-Data Figure 8. D ynamic characteristic (SWP) Figure 9. Dynamic characteristic (V ) CC IPP(A) IPP(A) 30 30 28 28 26 26 24 24 22 22 20 20 18 Breakdown 18 Breakdown 16 Direct 16 Direct 14 PPoollyy..((BDrireeackt)down) 14 PPoollyy..((BDrireeackt)down) 12 12 10 10 8 8 6 6 24 VCL(V) tTPJ=in 1it0ia0l =n s25 °C 24 VCL(V) tTPJ=in 1it0ia0l =n s25 °C 0 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 Doc ID 023284 Rev 1 3/9

Characteristics EMIF03-SIM05F3 Figure 10. E SD response to IEC 61000-4-2 Figure 11. ESD response to IEC 61000-4-2 (+8kV contact discharge) CLK line (-8kV contact discharge) CLK line 5.0V / Div 5.0V / Div 1234VVVVCCCCLLLL::::Pcccllleaaaammmkppp ciiinnnlagggm vvvpoooilllntttaaagggg veeeo @@@lta g361e000 0nn ssns 120.0V 27.3V 36.8V 3-1.4V 4-249 mV 43.4V 2-342 mV 1-9.3V 20 ns / Div 1234VVVVCCCCLLLL::::Pcccllleaaaammmkppp ciiinnnlagggm vvvpoooilllntttaaagggg veeeo @@@lta g361e000 0nn ssns 20 ns / Div Figure 12. ESD response to IEC 61000-4-2 Figure 13. ESD response to IEC 61000-4-2 (+8kV contact discharge) DATA line (-8kV contact discharge) DATA line 5.0V / Div 5.0V / Div 1234VVVVCCCCLLLL::::Pcccllleaaaammmkppp ciiinnnlagggm vvvpoooilllntttaaagggg veeeo @@@lta g361e000 0nn ssns 118.8V 26.6V 36.2V 3-1.7V 4-193 mV 42.9V 1-9.7V 2-454 mV 20 ns / Div 1234VVVVCCCCLLLL::::Pcccllleaaaammmkppp ciiinnnlagggm vvvpoooilllntttaaagggg veeeo @@@lta g361e000 0nn ssns 4/9 Doc ID 023284 Rev 1

EMIF03-SIM05F3 Characteristics Figure 14. E SD response to IEC 61000-4-2 Figure 15. ESD response to IEC 61000-4-2 (+8kV contact discharge) SWP line (-8kV contact discharge) SWP line 20V / Div 10V / Div 1107.6V 1234VVVVCCCCLLLL::::Pcccllleaaaammmkppp ciiinnnlagggm vvvpoooilllntttaaagggg veeeo @@@lta g361e000 0nn ssns 3-4.9V 4-1.7V 222.5V 313.5V 2-5.0V 45.6V 1234VVVVCCCCLLLL::::Pcccllleaaaammmkppp ciiinnnlagggm vvvpoooilllntttaaagggg veeeo @@@lta g361e000 0nn ssns 1-54.0 v 20 ns / Div 20 ns / Div Figure 16. ESD response to IEC 61000-4-2 Figure 17. ESD response to IEC 61000-4-2 (+8kV contact discharge) V line (-8kV contact discharge) V line CC CC 20V / Div 5V / Div 1234VVVVCCCCLLLL::::Pcccllleaaaammmkppp ciiinnnlagggm vvvpoooilllntttaaagggg veeeo @@@lta g361e000 0nn ssns 4-1.2V 3-3.1V 146.1V 213.2V 310V 45.0V 2-2.4V 1234VVVVCCCCLLLL::::Pcccllleaaaammmkppp ciiinnnlagggm vvvpoooilllntttaaagggg veeeo @@@lta g361e000 0nn ssns 1-20.0 v 20 ns / Div 20 ns / Div Doc ID 023284 Rev 1 5/9

Ordering information scheme EMIF03-SIM05F3 2 Ordering information scheme Figure 18. Ordering information scheme EMIF yy - xxx zz Fx EMI filter Number of lines Information x = resistance value (ohms) z = capacitance value / 10 (pF) or 3 letters = application 2 digits = version Package F = Flip Chip x = 3:lead-free, pitch = 400 µm, bump = 255 µm 6/9 Doc ID 023284 Rev 1

EMIF03-SIM05F3 Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 19. WLCSP package dimensions ∅255 ± 40 µm 2 3 1 A m m µ 0 µ 05 40 B ± 0. m m 2 2 C 1. 1.22 mm ± 0.05 µm F igure 20. Footprint recommendations Figure 21. Marking Dot, ST logo Copper pad Diameter: ECOPACK®grade 220 µm recommended 260 µm maximum xx = marking z = manufacturing location Solder mask opening: yww = datecode 300 µm minimum (y = year x x z ww = week) Solder stencil opening: 220 µm recommended y w w Doc ID 023284 Rev 1 7/9

Ordering information EMIF03-SIM05F3 Figure 22. Tape and reel specification Dot identifying Pin A1 location Ø 1.50± 0.10 2.0± 0.05 4.0± 0.1 1 0.20± 0.02 ± 0. 5 7 1. 5 0 0. 5 3 -0.10 1.30 ± 3.5 ±- 0.0 0. + 0 8. 1.30 ± 0.05 4.0 ± 0.1 0.69± 0.05 All dimensions are typical values in mm User direction of unreeling Note: More information is available in the application notes: AN2348, “IPAD™ 400 µm Flip Chip: package description and recommendations for use” AN1751, “EMI filters: recommendations and measurements” 4 Ordering information Table 3. Ordering information Order code Marking Package Weight Base qty Delivery mode EMIF03-SIM05F3 LB WLCSP 1.9 mg 5000 Tape and reel (7”) 5 Revision history Table 4. Document revision history Date Revision Changes 12-Nov-2012 1 Initial release. 8/9 Doc ID 023284 Rev 1

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