Photomicrosensor (Transmissive) EE-SX1055 Be sure to read Precautions on page25. ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. (cid:129)Longer leads allow the sensor to be mounted to a 1.6-mm thick board. 0.2 max. 0.2 max. (cid:129)5.4-mm-tall compact model. (cid:129)PCB mounting type. (cid:129)High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Four, 5° 0.5±0.05 Item Symbol Rated value White band Emitter Forward current I 50 mA F Optical (seenote 1) 5.4±0.2 axis Pulse forward cur- I 1 A FP rent (seenote2) 3.6±0.5 Reverse voltage VR 4 V Detector Collector–Emitter V 30 V Four, 0.5 Four, 0.25 Cross section AA voltage CEO Emitter–Collector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (seenote 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C Internal Circuit Soldering temperature Tsol 260°C K C (see note 3) Unless otherwise specified, the tolerances are as shown below. Note:1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. A E Dimensions Tolerance 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100Hz. Terminal No. Name 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 42 EE-SX1055 Photomicrosensor (Transmissive)

■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C A) IF W) A) VCE = 10 V Forward current I (mF PC ector dissipation P (mC Forward current I (mF TTTaaa === 27−503°°0CC°C Light current I (mA)L oll C Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA) Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) mA) IF = T5a0 =m 2A5°C nt I (%)L IVFC =E 2=0 5 m VA A) V0 ClEx = 10 V ght current I (L IIIFFF === 234000 mmmAAA ative light curre (nk current ID Li el ar IF = 10 mA R D Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 μnse time tr, tf (s) TVaC C= = 2 55° VC (%)e light current IL (oCpetincatel VITraF aoC x= Efi= s 2= )20 15 m0°C AV e light current I (%)L 108640000 d ITVFaC = E= 2= 20 15 m0°C AV (Center of optical axis) o v v Resp Relati Relati 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance RL (kΩ) Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1055 Photomicrosensor (Transmissive) 43

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