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  • 型号: EE-SV3-D
  • 制造商: Omron Electronics LLC
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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EE-SV3-D产品简介:

ICGOO电子元器件商城为您提供EE-SV3-D由Omron Electronics LLC设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 EE-SV3-D价格参考¥35.96-¥51.21。Omron Electronics LLCEE-SV3-D封装/规格:光学传感器 - 光断续器 - 槽型 - 晶体管输出, Optical Sensor Transmissive 0.134" (3.4mm) Phototransistor PCB Mount。您可以下载EE-SV3-D参考资料、Datasheet数据手册功能说明书,资料中有EE-SV3-D 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

SENSR OPTO SLOT 3.4MM TRANS THRU光学开关(透射型,光电晶体管输出) PHOTO MICROSENSOR

产品分类

光学传感器 - 光断续器 - 槽型 - 晶体管输出

品牌

Omron Electronics Inc-EMC Div

产品手册

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产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光学开关(透射型,光电晶体管输出),Omron Electronics EE-SV3-D-

数据手册

点击此处下载产品Datasheet

产品型号

EE-SV3-D

上升时间

4 us

下降时间

4 us

产品种类

光学开关(透射型,光电晶体管输出)

光圈宽度

0.5 mm

其它名称

EE-SV3-D-ND
EESV3D
OR1033

其它有关文件

点击此处下载产品Datasheet

功率耗散

100 mW

包装

散装

响应时间

4µs, 4µs

商标

Omron Electronics

安装类型

通孔

封装/外壳

PCB 安装

工作温度

-25°C ~ 85°C

工厂包装数量

100

感应方式

Transmissive, Slotted

感应方法

可传导的

感应距离

0.134"(3.4mm)

最大工作温度

+ 85 C

最大集电极电流

20 mA

最小工作温度

- 25 C

标准包装

100

槽宽

3.4 mm

正向电流

50 mA

波长

850 nm

特色产品

http://www.digikey.cn/product-highlights/zh/nonamplified-photomicrosensors/52959

电压-集射极击穿(最大值)

30V

电流-DC正向(If)

50mA

电流-集电极(Ic)(最大值)

20mA

类型

无放大

系列

EE-SV3

输出设备

Phototransistor

输出配置

光电晶体管

集电极—发射极最大电压VCEO

30 V

零件号别名

367377

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PDF Datasheet 数据手册内容提取

Photomicrosensor (Transmissive) EE-SV3 Series Be sure to read Precautions on page25. ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. (cid:129)High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aper- ture, and model with a horizontal sensing aperture are available. (cid:129)Solder terminal models: EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS (cid:129)PCB terminal models Center mark EE-SV3-B/-SV3-C/-SV3-D/-SV3-G ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Four, R1 Four, R1 Emitter Forward current I 50 mA F (seenote 1) Pulse forward I 1 A FP current (seenote2) Two, Two, Four, 0.5 Four, 0.253h.o2le±s0.2 dia. F2.o5u4r±, 01..25 3h.o2le±s0.2 dia. 2.54±0.2 Detector RCeovlleercsteo rv–oEltmagite- VVRCEO 43 0V V ter voltage Cross section AA Cross section AA Emitter–Collec- V --- Model Aperture (a x b) ECO tor voltage EE-SV3(-B) 2.1 x 0.5 Collector current I 20 mA C EE-SV3-C(S) 2.1 x 1.0 Collector dissipa- P 100 mW C EE-SV3-D(S) 2.1 x 0.2 tion (seenote 1) Internal Circuit EE-SV3-G(S) 0.5 x 2.1 Ambient tem- Operating Topr –25°C to perature 85°C K C Unless otherwise specified, the Storage Tstg –30°C to tolerances are as shown below. 100°C Soldering temperature Tsol 260°C A E Dimensions Tolerance (see note 3) 3 mm max. ±0.2 Terminal No. Name 3 < mm ≤ 6 ±0.24 Note:1. Rateufreer etox ctheee dtes m25p°eCra.ture rating chart if the ambient temper- A Anode 6 < mm ≤ 10 ±0.29 2. The pulse width is 10 μs maximum with a frequency of K Cathode 100Hz. 10 < mm ≤ 18 ±0.35 C Collector 3. Complete soldering within 10 seconds. E Emitter 18 < mm ≤ 30 ±0.42 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition EE-SV3(-B) EE-SV3-C(S) EE-SV3-D(S) EE-SV3-G(S) Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Light current I 0.5 to 14 mA 1 to 28 mA 0.1 mA min. 0.5 to 14 mA I = 20 mA, L F V = 10 V CE Dark current I 2 nA typ., 200 nA max. V = 10 V, D CE 0lx Leakage current I --- --- LEAK Collector–Emitter satu- V (sat) 0.1 V typ., 0.4 V max. --- 0.1 V typ., I = 20 mA, CE F rated voltage 0.4 V max. I = 0.1 mA L Peak spectral sensitivity λ 850 nm typ. V = 10 V P CE wavelength Rising time tr 4 μs typ. V = 5 V, CC Falling time tf 4 μs typ. RL = 100 Ω, I = 5 mA L 114 EE-SV3 Series Photomicrosensor (Transmissive)

■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Forward current I (mA)F PIFC ector dissipation P (mW)C Forward current I (mA)F TTTaaa === 27−503°°0CC°C Light current I (mA)L TVaC E= = 2 150°C V oll C Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA) Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (EE-SV3(-B)) Temperature Characteristics (Typical) (Typical) A) Ta = 25°C (%)L IVFC =E 2=0 5 m VA nA) 0V ClEx = 10 V Light current I (mL IIIIIFFFFF ===== 4321500000 mmmmmAAAAA ative light current I Dark current I (D el R Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (EE-SV3-D(S)) (EE-SV3(-B)) μme tr, tf (s) TVaC C= = 2 55° VC urrent I (%)L Center TIVoFafC = oE= p 2= t20i c15 am0°l Ca AVx i s current I (%)L Center oTIVFfa C o= Ep= 2t= ic20 a15 lm 0°aC xAVis e ti ht c ght ons e lig ve li Resp elativ Relati R Load resistance RL (kΩ) Distance d (mm) Distance d (mm) Sensing Position Characteristics Sensing Position Characteristics Response Time Measurement (EE-SV3-G(S)) (EE-SV3-C(S)) Circuit nt I (%)L TIVFaC = E= 2= 20 15 m0°−C AV0 nt I (%)L Center TIVoFafC = oE= p 2= t20i c15 am0°l Ca AVx i s OIuntppuutt 9100 %% e e urr d + urr c c ght Center of optical axis ght Input e li e li ativ ativ Output el el R R Distance d (mm) Distance d (mm) EE-SV3 Series Photomicrosensor (Transmissive) 115

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O mron: EE-SV3-B EE-SV3 EE-SV3-C EE-SV3-CS EE-SV3-D EE-SV3-G EE-SV3-GS EE-SV3-DS