(cid:1) EE-SPY415 Reflective Photomicrosensor with a detectable sensing distance of 3- to 19-mm (white paper) (cid:1) Photo IC circuitry greatly improves response time (cid:1) Pulse modulation effectively reduces external light interference (cid:1) Convergent technology ensures enhanced sensing area Ordering Information Appearance Sensing Sensing Sensingobject Output Weight Partnumber method distance configuration Reflective 11(cid:1)8mm Whitepaper PhotoIC 3.3g EE-SPY415 withreflection factorof90% Specifications (cid:1) ABSOLUTE MAXIMUM RATINGS (T = 25(cid:176) C (77(cid:176) F)) A Item Symbol Value Unit Remarks Supplyvoltage VCC 7 VDC ------------------------------------ Outputvoltage VOUT 16 V Outputtransistorvoltage(BetweenCollectorand Emitter) Outputcurrent IOUT 30 mA Outputtransistorcollectorcurrent Outputpowerdissipation POUT 250 mW Outputtransistorcollectorpowerdissipation (SeeNote1.) (cid:1) Operatingtemperature TOPR -10to60 C -------------------------------------- (SeeNote2.) (cid:1) Storagetemperature TSTG -40to85 C -------------------------------------- Note:1. Outputpowerdissipation(POUT)mustbederatedinaccordancewithFigure1intheEngineeringDataSection. 2. Tobeusedinapplicationswherenofreezingorcondensationoccurs.

EE-SPY415 EE-SPY415 (cid:1) CHARACTERISTICS Item Syymbol Limits Unit Test Min Typ Max Conditions Consumptioncurrent ICC ---- ---- 25 mA With/withoutobject Lowleveloutputvoltage VOL ---- ---- 0.4 V IOUT=20mAwithobject Highleveloutputvoltage VOH VCCby ---- ---- V VOUT=VCC RL=1 K(cid:1) 0.9 Withoutobject Responsedelaytime tPLH ---- ---- 1 ms VOUT=VCC RL=1 K(cid:1) (SeeNote.) tPHL Note: Responsedelaytimeisdefinedasbelow. ICC Withobject VCC Withoutobject IOUT RL VOH t VOUT OutputVoltage VOH VOL VOL t GND tPHL tPLH (cid:1) RATINGS Item Limits Detectabledistance(SeeNote.) 11(cid:1)2mm(BlackpaperandOHPpaper)11(cid:1) 8mm(Whitepaper) Non-detectabledistance(SeeNote.) 20mm(Blacksponge)45mm(Whitepaper) Usableambientillumination 3,000Lxmax.atReceiversurface(incandescentlamp,fluorescentlamp) Vibration Mechanical 10to150Hz,Peakacceleration10G(100m/s)1.5mmdoubleamplitudefor2hourseachin durability X,Y,Zdirections Shock Mechanical 300m/s2(approximately30G)inX,Y,Zdirections,respectively3times durability Resistanceto Faultyoperation 200Vp,pulsewidth:1(cid:2)s nnooiissee((nnoorrmmaall Break 350Vp,pulsewidth:1(cid:2)s mode) Resistanceto Faultyoperation 250Vp,pulsewidth:1(cid:2)s nnooiissee((ccoommmmoonn Break 500Vp,pulsewidth:1(cid:2)s mode) Terminalstrenggth Tensilestrength 2kgf(20N),for5seconds Flexurestrength 1kgf(10N),1time,for5seconds Note: Ifabackgroundobjectispresent,theobjectshouldbelocatedatthespecifiednon-detectabledistanceorfurtherfromthereceiver surface. Whitepaper:reflectionfactorof90% Blackpaper:reflectionfactorof16%

EE-SPY415 EE-SPY415 Engineering Data (cid:1) OUTPUT POWER DISSIPATION DERATING FOR TEMPERATURE W) 300 m ( ut 250 o P n 200 o pati 150 si s di 100 er w 50 o p utput 0-40-30-20-100102030405060708090100 O AmbientTemperatureTA((cid:176) C) Dimensions (cid:1) EE-SPY415 LotNo. PartNumber NAPAJ (cid:1)3.2hole 1 Vcc 514YPS---EE 2.5 2 OUTPUT 2.5 3 GND 2.1 (cid:1)3.8hole 33 R4 MAX12 3 2 1 7 0.4 11 171825--3 5 2 (AmpJapan) 2 2 3.5(cid:1)0.2 3.5 26.5+/--0.2 11 3 (cid:1)3+0--0.1 2 (cid:1)3.2hole 3.5(cid:1) 6.9 0.2 Precautions SeetheTechnicalInformationSectionforstandardprecautions.

EE-SPY415 EE-SPY415 NOTE:DIMENSIONSSHOWNAREINMILLIMETERS.Toconvertmillimeterstoinchesdivideby25.4. (cid:1) OMRONELECTRONICS,INC. OMRONCANADA,INC. OneEastCommerceDrive 885MilnerAvenue Schaumburg,IL60173 Scarborough,OntarioM1B5V8 1-800-55-OMRON 416-286-6465 Cat.No.EO5DAX4 1/99 Specificationssubjecttochangewithoutnotice. PrintedinU.S.A.

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