ICGOO在线商城 > 传感器,变送器 > 光学传感器 - 光断续器 - 槽型 - 晶体管输出 > EE-SH3-G
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EE-SH3-G产品简介:
ICGOO电子元器件商城为您提供EE-SH3-G由Omron Electronics LLC设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 EE-SH3-G价格参考¥18.61-¥20.70。Omron Electronics LLCEE-SH3-G封装/规格:光学传感器 - 光断续器 - 槽型 - 晶体管输出, Optical Sensor Transmissive 0.134" (3.4mm) Phototransistor PCB Mount。您可以下载EE-SH3-G参考资料、Datasheet数据手册功能说明书,资料中有EE-SH3-G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | SENSR OPTO SLOT 3.4MM TRANS THRU光学开关(透射型,光电晶体管输出) PHOTO MICROSENSOR |
产品分类 | |
品牌 | Omron Electronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 光学开关(透射型,光电晶体管输出),Omron Electronics EE-SH3-G- |
数据手册 | |
产品型号 | EE-SH3-G |
上升时间 | 4 us |
下降时间 | 4 us |
产品目录绘图 | |
产品目录页面 | |
产品种类 | 光学开关(透射型,光电晶体管输出) |
光圈宽度 | 0.5 mm |
其它名称 | EE-SH3-G-ND |
其它有关文件 | |
功率耗散 | 100 mW |
包装 | 托盘 |
响应时间 | 4µs, 4µs |
商标 | Omron Electronics |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装/外壳 | PCB 安装 |
工作温度 | -25°C ~ 85°C |
工厂包装数量 | 50 |
感应方式 | Transmissive, Slotted |
感应方法 | 可传导的 |
感应距离 | 0.134"(3.4mm) |
最大工作温度 | + 85 C |
最大集电极电流 | 20 mA |
最小工作温度 | - 25 C |
标准包装 | 50 |
槽宽 | 3.4 mm |
正向电流 | 50 mA |
波长 | 940 nm |
特色产品 | http://www.digikey.cn/product-highlights/zh/nonamplified-photomicrosensors/52959 |
电压-集射极击穿(最大值) | 30V |
电流-DC正向(If) | 50mA |
电流-集电极(Ic)(最大值) | 20mA |
类型 | 无放大 |
系列 | EE-SH3 |
输出设备 | Phototransistor |
输出配置 | 光电晶体管 |
集电极—发射极最大电压VCEO | 30 V |
零件号别名 | 367288 EESH3GNC |
Photomicrosensor (Transmissive) EE-SH3 Series Be sure to read Precautions on page25. ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. (cid:129)High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aper- Four, R1 Two, C1.5 ture, and model with a horizontal sensing aperture are available. (cid:129)Solder terminal models: 6.2 EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS (cid:129)PCB terminal models: 19±0.15 EE-SH3-B/-SH3-C/-SH3-D/-SH3-G 25.4 Matted Solder terminal PCB terminal Two, 3.2±0.2 Center mark Cross section AA Cross section AA ■ Absolute Maximum Ratings (Ta = 25°C) dia. holes 3.4±0.2 Item Symbol Rated value Emitter Forward current I 50 mA 10.2 F 7.2±0.2 7.2±0.2 (seenote 1) Pulse forward cur- I 1 A FP rent (seenote2) Four, 0.25 Reverse voltage V 4 V 7.6±0.3 2.54±0.2 R Detector Collector–Emitter V 30 V CEO voltage Model Aperture (a x b) Emitter–Collector V --- ECO EE-SH3(-B) 2.1 x 0.5 voltage EE-SH3-C(S) 2.1 x 1.0 Collector current I 20 mA C EE-SH3-D(S) 2.1 x 0.2 Collector dissipa- P 100 mW Internal Circuit C EE-SH3-G(S) 0.5 x 2.1 tion (seenote 1) K C Ambient tem- Operating Topr –25°C to 85°C Unless otherwise specified, the perature Storage Tstg –30°C to 100°C tolerances are as shown below. Soldering temperature Tsol 260°C A E Dimensions Tolerance (see note 3) 3 mm max. ±0.2 Note:1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 < mm ≤ 6 ±0.24 ature exceeds 25°C. A Anode 6 < mm ≤ 10 ±0.29 2. The pulse width is 10 μs maximum with a frequency of K Cathode 100Hz. 10 < mm ≤ 18 ±0.35 C Collector 3. Complete soldering within 10 seconds. E Emitter 18 < mm ≤ 30 ±0.42 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition EE-SH3(-B) EE-SH3-C(S) EE-SH3-D(S) EE-SH3-G(S) Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Light current I 0.5 to 14 mA typ. 1 to 28 mA typ. 0.1 mA min. 0.5 to 14 mA I = 20 mA, L F V = 10 V CE Dark current I 2 nA typ., 200 nA max. V = 10 V, D CE 0lx Leakage current I --- --- LEAK Collector–Emitter satu- V (sat) 0.1 V typ., 0.4 V max. --- 0.1 V typ., I = 20 mA, CE F rated voltage 0.4 V max. I = 0.1 mA L Peak spectral sensitivity λ 850 nm typ. V = 10 V P CE wavelength Rising time tr 4 μs typ. V = 5 V, CC Falling time tf 4 μs typ. RL = 100 Ω, I = 5 mA L 108 EE-SH3 Series Photomicrosensor (Transmissive)
■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Forward current I (mA)F PIFC ector dissipation P (mW)C Forward current I (mA)F TTTaaa === 27−503°°0CC°C Light current I (mA)L TVaC E= = 2 150°C V oll C Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA) Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (EE-SH3(-B)) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) A) Ta = 25°C (%)L IVFC =E 2=0 5 m VA nA) V0 ClEx = 10 V Light current I (mL IIIIIFFFFF ===== 4321500000 mmmmmAAAAA ative light current I Dark current I (D el R Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (EE-SH3-D(S)) (EE-SH3(-B)) μme tr, tf (s) TVaC C= = 2 55° VC urrent I (%)L Center TIVoFafC = oE= p 2= t20i c15 am0°l Ca AVx i s current I (%)L Center oTIVFfa C o= Ep= 2t= ic20 a15 lm 0°aC xAVis e ti ht c ght ons e lig ve li Resp elativ Relati R Load resistance RL (kΩ) Distance d (mm) Distance d (mm) Sensing Position Characteristics Sensing Position Characteristics Response Time Measurement (EE-SH3-G(S)) (EE-SH3-C(S)) Circuit nt I (%)L TIVFaC = E= 2= 20 15 m0°−C AV0 nt I (%)L Center TIVoFafC = oE= p 2= t20i c15 am0°l Ca AVx i s OIuntppuutt 9100 %% e e urr d + urr c c ght Center of optical axis ght Input e li e li v v ati ati Output el el R R Distance d (mm) Distance d (mm) EE-SH3 Series Photomicrosensor (Transmissive) 109
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O mron: EE-SH3-B EE-SH3-CS EE-SH3-D EE-SH3-DS EE-SH3-G EE-SH3-GS EE-SH3