Photomicrosensor (Reflective) EE-SF5(-B) Be sure to read Precautions on page24. ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. (cid:129)Dust-tight construction. (cid:129)With a visible-light intercepting filter which allows objects to be Matted sensed without being greatly influenced by the light radiated from fluorescent lamps. (cid:129)Mounted with M2 screws. (cid:129)Model with soldering terminals (EE-SF5). (cid:129)Model with PCB terminals (EE-SF5-B). 1.9 dia. 2.2±0.2 dia. hole (cid:129)Recommended sensing distance = 5.0 mm ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value F1.o5ur, Four, 7.6±1 Emitter Forward current IF 50 mA 0.5 (seenote 1) Four, 0.25 Pulse forward cur- I 1 A FP 7.62±0.3 2.54 rent (seenote2) 2.54±0.2 Reverse voltage V 4 V R EE-SF5 EE-SF5-B Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Internal Circuit Collector current I 20 mA C Collector dissipa- P 100 mW A E Unless otherwise specified, the C tion (seenote 1) tolerances are as shown below. Ambient tem- Operating Topr –25°C to 80°C perature Storage Tstg –30°C to 80°C K C Dimensions Tolerance Soldering temperature Tsol 260°C 3 mm max. ±0.3 (see note 3) Terminal No. Name 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 Note:1. Rateufreer etox ctheee dtes m25p°eCra.ture rating chart if the ambient temper- K Cathode 10 < mm ≤ 18 ±0.55 2. The pulse width is 10 μs maximum with a frequency of C Collector 100Hz. E Emitter 18 < mm ≤ 30 ±0.65 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 200 μA min., 2,000 μA max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note:The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 172 EE-SF5(-B) Photomicrosensor (Reflective)

■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C d = 5 mm ard current I (mA)F or dissipation P (mW)C μght current I (A)L SWr9TVde0ae Cfh=%l nEe=i ts5c=e i2 tn mip15oga0°nm Cop Vfbeajrce twcotir:t ho fa Light current I (mA)L aoWS fer h9eni0tfsele%in cpgtai oopnbe jrfe awcctit:to hr IIFFI F== = I43F 002= 0m m1 mA0A AmA w ct Li For olle C Ambient temperature Ta (°C) Forward current IF (mA) Collector−Emitter voltage VCE (V) Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) elative light current I (%)L IVFC =E 2=0 5 m VA Dark Current I(nA)D V0lCxE = 10 V μesponse time tr, tf (s) VTaC C= = 2 55 °VC R R Ambient temperature Ta (°C) Ambient temperature Ta (°C) Load resistance RL (kΩ) Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) Ta = 25°C μLight current I (A)L wSVeCitEhn s=ai n 1rge0 f olVebcjeticotn: Wfahcittoer poaf p9e0r% Relative light current I (%)L Spfa((IVTaeFabcapnC t))=oe sE =rr::i n 2=o wddg2f0 i 11 5t59o h==m0b ° Va%jC eA 35rc e tmm:f lWemmchtii oten d1 Relative light current I (%)L VITdoprfSFaeaba1eC cf =jpl nEte=e=oe s cc 2r=r it5t n 2:io0w og W55fmn i t9m ° hhV0Cm itaA%e d51 m=m PLEhoDt ostirdaensistor side Distance d (mm) Distance d2 (mm) Distance d2 (mm) Sensing Angle Characteristics Sensing Angle Characteristics Response Time Measurement (Typical) (Typical) Circuit %) %) Input (nt IL nt I (L Output 9100 %% e e urr urr c c ht ht Input Relative lig Sweithn sain rged TIVf oFl=ae Cb= cE=j5 et 2 i=com20 tn51 :m m °W0fCa AVhc ittoer poaf p9e0r% Relative lig oSbejnescitng SwTIVdFa eCi==t hnE= 5 2 s =a2 i0nm 51 rgme°m0 Cfo AlVeb cjeticotn: Wfahcittoer poaf p9e0r% Output Angle deviation θ (°) Angle deviation θ (°) EE-SF5(-B) Photomicrosensor (Reflective) 173

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