Photomicrosensor (Reflective) EE-SB5(-B) Be sure to read Precautions on page24. ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. (cid:129)Dust-tight construction. (cid:129)With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. (cid:129)Mounted with M3 screws. (cid:129)Model with soldering terminals (EE-SB5). (cid:129)Model with PCB terminals (EE-SB5-B). Two, 3.2±0.2 dia. holes (cid:129)Recommended sensing distance = 5.0 mm Optical axis Optical axis ■ Absolute Maximum Ratings (Ta = 25°C) 9±0.2 11.5±0.2 Item Symbol Rated value Emitter Forward current I 50 mA F Four, 0.5 (seenote 1) Pulse forward cur- I 1 A FP 7.62±0.3 Four, 0.25 2.54±0.2 2.54±0.2 rent (seenote2) Reverse voltage V 4 V EE-SB5 EE-SB5-B R Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Internal Circuit Collector current I 20 mA C Collector dissipa- P 100 mW A C C Unless otherwise specified, the tion (seenote 1) tolerances are as shown below. Ambient tem- Operating Topr –25°C to 80°C perature Storage Tstg –30°C to 80°C K E Dimensions Tolerance Soldering temperature Tsol 260°C 3 mm max. ±0.3 (see note 3) Terminal No. Name 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 Note:1. Rateufreer etox ctheee dtes m25p°eCra.ture rating chart if the ambient temper- K Cathode C Collector 10 < mm ≤ 18 ±0.55 2. T10h0e Hpzu.lse width is 10 μs maximum with a frequency of E Emitter 18 < mm ≤ 30 ±0.65 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 200 μA min., 2,000 μA max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note:The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 176 EE-SB5(-B) Photomicrosensor (Reflective)

■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C W) Ta = 25°C Sde =n s5in mg mob ject: ent I (mA)F ation P (mC nt I (mA)L VdatSWo Ce=rrhEe n o i5tf=self ei mn 91cpg00tmai % oopVnbe jrfe awccti:t h ent I (mA)L Wao fr h9ei0tfele% cptaiopne rf awcittohr IIFF == 3400 mmAA orward curr ector dissip Light curre Light curr IIFF == 2100 mmAA F oll C Ambient temperature Ta (°C) Forward current IF (mA) Collector−Emitter voltage VCE (V) Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) elative light current I (%)L IVFC =E 2=0 5 m VA Dark Current I(nA)D V0lCxE = 10 V μesponse time tr, tf (s) VTaC C= = 2 55 °VC R R Ambient temperature Ta (°C) Ambient temperature Ta (°C) Load resistance RL (kΩ) Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) μLight current I (A)L TIVSwFaCe it= Ehn= s2= a2i0 n 15r gme0° Cf oAVlebcjeticotn: Wfahcittoer poaf p9e0r% (%)Relative light current IL SWwfIVTdaFeai1cC ht =hn tE=i=ot s e2=a r5i2 n 0 o pr15gm efam0° f9oCmp lAVe0be c%jret ico tn: Relative light current I (%)L prfSoVITdaeFbaea1cC fjp =ln teEe==oe s cc 2=r ri5t2t n 0: iow o15gWm fmn0i ° t9Cm hh AV0 i ta%e Distance d (mm) Distance d2 (mm) Distance d2 (mm) Sensing Angle Characteristics Response Time Measurement (Typical) Circuit %) Input (nt IL Output 9100 %% e urr c ht Input g ative li TIVdFa C== E= 5 2 =2 0m 51 m°m0C AV Output el Sensing object: White paper R with a reflection factor of 90% Angle deviation θ (°) EE-SB5(-B) Photomicrosensor (Reflective) 177

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