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  • 型号: EE-SB5-B
  • 制造商: Omron Electronics LLC
  • 库位|库存: xxxx|xxxx
  • 要求:
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EE-SB5-B产品简介:

ICGOO电子元器件商城为您提供EE-SB5-B由Omron Electronics LLC设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 EE-SB5-B价格参考¥31.66-¥42.25。Omron Electronics LLCEE-SB5-B封装/规格:光学传感器 - 反射式 - 模拟输出, Reflective Optical Sensor 0.197" (5mm) PCB Mount。您可以下载EE-SB5-B参考资料、Datasheet数据手册功能说明书,资料中有EE-SB5-B 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

SENSR OPTO TRANS 5MM REFL TH PCB光学开关(反射型,光电晶体管输出) REFL. PCB TERM.

产品分类

光学传感器 - 反射式 - 模拟输出

品牌

Omron Electronics Inc-EMC Div

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光学开关(反射型,光电晶体管输出),Omron Electronics EE-SB5-B-

数据手册

点击此处下载产品Datasheet

产品型号

EE-SB5-B

上升时间

30 us

下降时间

30 us

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

产品种类

光学开关(反射型,光电晶体管输出)

其它名称

EESB5B
OR501

其它有关文件

点击此处下载产品Datasheet

包装

散装

反向电压

4 V

响应时间

30µs, 30µs

商标

Omron Electronics

安装类型

通孔

安装风格

Through Hole

封装/外壳

PCB 安装

工作温度

-25°C ~ 80°C

工厂包装数量

50

感应方式

Reflective

感应方法

反射

感应距离

0.197"(5mm)

最大工作温度

+ 80 C

最大集电极电流

20 mA

最小工作温度

- 25 C

标准包装

50

正向电压

1.2 V

正向电流

30 mA

波长

940 nm

电压-集射极击穿(最大值)

30V

电流-DC正向(If)

50mA

电流-集电极(Ic)(最大值)

20mA

系列

EE-SB5-(B)

输出类型

光电晶体管

输出设备

Phototransistor

集电极—发射极最大电压VCEO

30 V

零件号别名

1216786 367269 EESB5BNC

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PDF Datasheet 数据手册内容提取

Photomicrosensor (Reflective) EE-SB5(-B) Be sure to read Precautions on page24. ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. (cid:129)Dust-tight construction. (cid:129)With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. (cid:129)Mounted with M3 screws. (cid:129)Model with soldering terminals (EE-SB5). (cid:129)Model with PCB terminals (EE-SB5-B). Two, 3.2±0.2 dia. holes (cid:129)Recommended sensing distance = 5.0 mm Optical axis Optical axis ■ Absolute Maximum Ratings (Ta = 25°C) 9±0.2 11.5±0.2 Item Symbol Rated value Emitter Forward current I 50 mA F Four, 0.5 (seenote 1) Pulse forward cur- I 1 A FP 7.62±0.3 Four, 0.25 2.54±0.2 2.54±0.2 rent (seenote2) Reverse voltage V 4 V EE-SB5 EE-SB5-B R Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Internal Circuit Collector current I 20 mA C Collector dissipa- P 100 mW A C C Unless otherwise specified, the tion (seenote 1) tolerances are as shown below. Ambient tem- Operating Topr –25°C to 80°C perature Storage Tstg –30°C to 80°C K E Dimensions Tolerance Soldering temperature Tsol 260°C 3 mm max. ±0.3 (see note 3) Terminal No. Name 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 Note:1. Rateufreer etox ctheee dtes m25p°eCra.ture rating chart if the ambient temper- K Cathode C Collector 10 < mm ≤ 18 ±0.55 2. T10h0e Hpzu.lse width is 10 μs maximum with a frequency of E Emitter 18 < mm ≤ 30 ±0.65 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 200 μA min., 2,000 μA max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note:The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 176 EE-SB5(-B) Photomicrosensor (Reflective)

■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C W) Ta = 25°C Sde =n s5in mg mob ject: ent I (mA)F ation P (mC nt I (mA)L VdatSWo Ce=rrhEe n o i5tf=self ei mn 91cpg00tmai % oopVnbe jrfe awccti:t h ent I (mA)L Wao fr h9ei0tfele% cptaiopne rf awcittohr IIFF == 3400 mmAA orward curr ector dissip Light curre Light curr IIFF == 2100 mmAA F oll C Ambient temperature Ta (°C) Forward current IF (mA) Collector−Emitter voltage VCE (V) Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) elative light current I (%)L IVFC =E 2=0 5 m VA Dark Current I(nA)D V0lCxE = 10 V μesponse time tr, tf (s) VTaC C= = 2 55 °VC R R Ambient temperature Ta (°C) Ambient temperature Ta (°C) Load resistance RL (kΩ) Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) μLight current I (A)L TIVSwFaCe it= Ehn= s2= a2i0 n 15r gme0° Cf oAVlebcjeticotn: Wfahcittoer poaf p9e0r% (%)Relative light current IL SWwfIVTdaFeai1cC ht =hn tE=i=ot s e2=a r5i2 n 0 o pr15gm efam0° f9oCmp lAVe0be c%jret ico tn: Relative light current I (%)L prfSoVITdaeFbaea1cC fjp =ln teEe==oe s cc 2=r ri5t2t n 0: iow o15gWm fmn0i ° t9Cm hh AV0 i ta%e Distance d (mm) Distance d2 (mm) Distance d2 (mm) Sensing Angle Characteristics Response Time Measurement (Typical) Circuit %) Input (nt IL Output 9100 %% e urr c ht Input g ative li TIVdFa C== E= 5 2 =2 0m 51 m°m0C AV Output el Sensing object: White paper R with a reflection factor of 90% Angle deviation θ (°) EE-SB5(-B) Photomicrosensor (Reflective) 177

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