Ordering number : ENA1010A ECH8651R N-Channel Power MOSFET 24V, 10A, 14mΩ, Dual ECH8 http://onsemi.com Features • Low ON-resistance • Built-in gate protection resistor • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 24 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 10 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Dissipation PT When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) • Package : ECH8 7011A-003 • JEITA, JEDEC : - • Minimum Packing Quantity : 3,000 pcs./reel Top View ECH8651R-TL-H Packing Type : TL Marking 2.9 25 0.15 0. 8 5 WV 0 to 0.02 Lot No. 2.8 2.3 TL 1 4 Electrical Connection 5 0.2 0.65 0.3 8 7 6 5 9 1 : Source1 0. 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 7 0 0. 6 : Drain 7 : Drain 1 2 3 4 8 : Drain Bottom View ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 50912 TKIM/40908PE TIIM TC-00001313 No. A1010-1/7

ECH8651R Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 24 V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.5 1.3 V Forward Transfer Admittance | yfs | VDS=10V, ID=5A 5.5 9.5 S RDS(on)1 ID=5A, VGS=4.5V 7 10.5 14 mΩ RDS(on)2 ID=5A, VGS=4.0V 7.2 11 15 mΩ Static Drain-to-Source On-State Resistance RDS(on)3 ID=5A, VGS=3.1V 7.5 12.5 17.5 mΩ RDS(on)4 ID=2.5A, VGS=2.5V 9 15 21 mΩ Turn-ON Delay Time td(on) 300 ns Rise Time tr 1000 ns See specifi ed Test Circuit. Turn-OFF Delay Time td(off) 4000 ns Fall Time tf 2500 ns Total Gate Charge Qg 24 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=10A 2 nC Gate-to-Drain “Miller” Charge Qgd 4.5 nC Diode Forward Voltage VSD IS=10A, VGS=0V 0.77 1.2 V Switching Time Test Circuit VIN VDD=10V 4.5V 0V VIN ID=5A RL=2Ω D VOUT PW=10μs D.C.≤1% Rg G ECH8651R P.G 50Ω S Rg=1kΩ Ordering Information Device Package Shipping memo ECH8651R-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1010-2/7

ECH8651R ID -- VDS RDS(on) -- VGS 10 40 V Ta=25°C V 5 9 3.1 2. 1.5V mΩ 35 Drain Current, I-- AD 2467358 4V4.5V atic Drain-to-Sourcen-State Resistance, R(on) -- DS 1123205005 ID=2.5A 5.0A 1 StO 5 VGS=1V 0 0 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 Drain-to-Source Voltage, VDS -- V IT13148 Gate-to-Source Voltage, VGS -- V IT13149 RDS(on) -- Ta | yfs | -- ID 30 10 VDS=10V S atic Drain-to-Sourcen-State Resistance, R(on) -- mΩDS 112250055 VGS=4.0VV,GV ISGD=S=2=.553A.V1, VVI,D GI=SD2==.455.AA5V, ID=5A y ward Transfer Admittance, fs -- || 2375 Ta= --2255°°CC 75°C StO or F 0 1.0 --50 0 50 100 150 200 0.1 2 3 5 7 1.0 2 3 5 7 10 Ambient Temperature, Ta -- °C IT13150 Drain Current, ID -- A IT13151 IS -- VSD SW Time -- ID 10 1000 7 VGS=0V VDD=10V 5 7 3 5 td(off) VGS=4V 2 s n -- AS 1.0753 Time -- 23 tf ource Current, I 0.175322 Ta=75°C 25°C--25°C hing Time, SW 100075 td(torn) S 0.017 witc 3 5 S 2 3 2 0.001 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 2 3 5 7 1.0 2 3 5 7 10 Diode Forward Voltage, VSD -- V IT13152 Drain Current, ID -- A IT13295 VGS -- Qg A S O 4.5 2 4.0 VIDD=S1=01A0V 1007 IDP=60A PW≤10μs V 5 o-Source Voltage, V -- GS 21323.....05055 Drain Current, I -- A D 11.002235723357 IDOa=rpe1ae0 riAast iloimn iitne dth bisy RDS(on). DC ope1ra0t0imo1n0sms1m1s00μs Gate-t 1.0 0.157 TSain=g2l5e° pCulse 0.5 3 When mounted on ceramic substrate 2 (900mm2✕0.8mm) 1unit 0 0.01 0 5 10 15 20 25 30 0.01 2 3 5 70.1 2 3 5 71.0 2 3 5 710 2 3 5 Total Gate Charge, Qg -- nC IT13296 Drain-to-Source Voltage, VDS -- V IT13390 No. A1010-3/7

ECH8651R PD -- Ta 1.8 When mounted on ceramic substrate W 1.6 (900mm2✕0.8mm) -- D 11..45 P on, 1.2 wer Dissipati 10..08 T1outanli tDissipation Po 0.6 e bl a 0.4 w o All 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT13154 No. A1010-4/7

ECH8651R Embossed Taping Specifi cation ECH8651R-TL-H No. A1010-5/7

ECH8651R Outline Drawing Land Pattern Example ECH8651R-TL-H Mass (g) Unit Unit: mm 0.02 mm * For reference 0.4 6 0. 8 2. 0.65 No. A1010-6/7

ECH8651R Note on usage : Since the ECH8651R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1010-7/7