DSSK 70-0015B Power Schottky Rectifier I = 2x35 A FAV V = 15 V with common cathode RRM V = 0.33 V F Preliminary Data A C A TO-247 AD V V Type RSM RRM V V 15 15 DSSK 70-0015B A C C (TAB) A A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features • International standard package I 70 A FRMS (cid:127) Very low V I T = 130°C; rectangular, d = 0.5 35 A F FAV C (cid:127) Extremely low switching losses I T = 130°C; rectangular, d = 0.5; per device 70 A FAV C (cid:127) Low I -values RM I T = 45°C; t = 10 ms (50 Hz), sine 650 A (cid:127) Epoxy meets UL 94V-0 FSM VJ p E I = tbd A; L = 180 µH; T = 25°C; non repetitive tbd mJ AS AS VJ Applications I V =1.5 (cid:127)V typ.; f=10 kHz; repetitive tbd A AR A RRM (cid:127) Rectifiers in switch mode power (dv/dt) tbd V/µs supplies (SMPS) cr (cid:127) Free wheeling diode in low voltage TVJ -55...+150 °C converters T 150 °C VJM T -55...+150 °C stg P T = 25°C 115 W Advantages tot C (cid:127) High reliability circuit operation M mounting torque 0.8...1.2 Nm (cid:127) Low voltage peaks for reduced d protection circuits Weight typical 6 g (cid:127) Low noise switching (cid:127) Low losses Symbol Conditions Characteristic Values typ. max. Dimensions see Outlines.pdf I (cid:99) T = 25°C V = V 20 mA R VJ R RRM T = 100°C V = V 350 mA VJ R RRM V I = 35 A; T = 125°C 0.33 V F F VJ I = 35 A; T = 25°C 0.45 V F VJ I = 70 A; T = 125°C 0.45 V F VJ R 1.1 K/W thJC R 0.25 K/W thCH Pulse test: (cid:99) Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 46 2 © 2002 IXYS All rights reserved 1 - 2

DSSK 70-0015B 100 10000 1000 A T =150°C pF VJ mA I IR 125°C CT F 100 100°C 10 TVJ = 10 75°C 150°C 125°C 50°C 25°C 1 25°C T = 25°C VJ 1 0.1 1000 0.0 0.2 0.4 V 0.6 0 2 4 6 8 10 12 14V 0 2 4 6 8 10 12 14 V V V V F R R Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 80 35 10000 W A 30 P (AV) A 60 I 25 I F(AV) d=0.5 DC FSM 20 d = 40 DC 1000 15 0.5 0.33 0.25 10 20 0.17 0.08 5 0 0 100 0 40 80 120 °C 160 0 10 20 30 40 50 60 A 10 100 1000 µs 10000 T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 2 1 D=0.5 K/W 0.33 Z 0.25 thJC 0.17 0.08 Single Pulse 0.1 0.01 DSSK 70-0015B 0.0001 0.001 0.01 0.1 s 1 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 6 4 2 © 2002 IXYS All rights reserved 2 - 2

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