ICGOO在线商城 > 分立半导体产品 > 二极管 - 整流器 - 阵列 > DSSK30-018A
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DSSK30-018A产品简介:
ICGOO电子元器件商城为您提供DSSK30-018A由IXYS设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 DSSK30-018A价格参考。IXYSDSSK30-018A封装/规格:二极管 - 整流器 - 阵列, Diode Array 1 Pair Common Cathode Schottky 180V 15A Through Hole TO-3P-3 Full Pack。您可以下载DSSK30-018A参考资料、Datasheet数据手册功能说明书,资料中有DSSK30-018A 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 180V 15A TO247AD肖特基二极管与整流器 30 Amps 180V |
产品分类 | 二极管,整流器 - 阵列分离式半导体 |
品牌 | IXYS |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,IXYS DSSK30-018A- |
数据手册 | |
产品型号 | DSSK30-018A |
不同If时的电压-正向(Vf) | 860mV @ 15A |
不同 Vr时的电流-反向漏电流 | 300µA @ 180V |
二极管类型 | |
二极管配置 | 1 对共阴极 |
产品 | Schottky Diodes |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | TO-247AD |
其它名称 | DSSK30018A |
包装 | 管件 |
单位重量 | 6.500 g |
反向恢复时间(trr) | - |
商标 | IXYS |
安装类型 | 通孔,径向 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-3P-3 整包 |
封装/箱体 | TO-247-3 |
峰值反向电压 | 180 V |
工作温度范围 | - 55 C to + 175 C |
工厂包装数量 | 30 |
技术 | Silicon |
最大功率耗散 | 90 W |
最大反向漏泄电流 | 2.5 mA |
最大工作温度 | + 175 C |
最大浪涌电流 | 120 A |
最小工作温度 | - 55 C |
标准包装 | 30 |
正向电压下降 | 0.72 V |
正向连续电流 | 15 A |
热阻 | 0.25°C/W Cs |
电压-DC反向(Vr)(最大值) | 180V |
电流-平均整流(Io)(每二极管) | 15A |
系列 | DSSK30-018 |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Dual Common Cathode |
DSSK 30-018A Power Schottky Rectifier I = 2x15 A FAV V = 180 V with common cathode RRM V = 0.72 V F A C A TO-247 AD V V Type RSM RRM V V 180 180 DSSK 30-018A A C C (TAB) A A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features I 50 A (cid:129) International standard package FRMS I T = 150°C; rectangular, d = 0.5 15 A (cid:129) Very low V FAV C F I T = 150°C; rectangular, d = 0.5; per device 30 A (cid:129) Extremely low switching losses FAV C (cid:129) Low I -values I T = 45°C; t = 10 ms (50 Hz), sine 120 A (cid:129) EpoxyR Mmeets UL 94V-0 FSM VJ p E I = 2 A; L = 100 µH; T = 25°C; non repetitive 0.2 mJ AS AS VJ Applications I V =1.5 (cid:129) V typ.; f=10 kHz; repetitive 0.2 A AR A RRM (cid:129) Rectifiers in switch mode power (dv/dt) 1000 V/μs supplies (SMPS) cr (cid:129) Free wheeling diode in low voltage T -55...+175 °C converters VJ T 175 °C VJM T -55...+150 °C Advantages stg P T = 25°C 90 W (cid:129) High reliability circuit operation tot C (cid:129) Low voltage peaks for reduced Md mounting torque 0.8...1.2 Nm protection circuits (cid:129) Low noise switching Weight typical 6 g (cid:129) Low losses Symbol Conditions Characteristic Values typ. max. Dimensions see Outlines.pdf I (cid:99) T = 25°C V = V 0.3 mA R VJ R RRM T = 100°C V = V 2.5 mA VJ R RRM V I = 15 A; T = 125°C 0.72 V F F VJ I = 15 A; T = 25°C 0.86 V F VJ I = 30 A; T = 125°C 0.87 V F VJ R 1.7 K/W thJC R 0.25 K/W thCH Pulse test: (cid:99) Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, Conditions and dimensions. 20071019a © 2007 IXYS All rights reserved 1 - 2
DSSK 30-018A 100 10 1000 mA A TVJ=175°C pF 1 I 150°C C I R T F 0.1 125°C 10 100°C 100 TVJ = 175°C 0.01 125°C 75°C 25°C 0.001 50°C 25°C T = 25°C VJ 1 0.0001 10 0.0 0.2 0.4 0.6 0.8 1.0V1.2 0 50 100 150 V 200 0 50 100 150 V 200 V V V F R R Fig. 1 Max. forward voltage drop Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T characteristics vs. reverse voltage V vs. reverse voltage V R R 60 60 A W 50 50 I P(AV) A F(AV) d=0.5 DC I 40 40 FSM 30 30 d = DC 0.5 20 20 0.33 0.25 0.17 10 10 0.08 0 0 0 40 80 120 160°C 0 10 20 30 40 A µs T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss characteristics F(AV) vs. case temperature T C 2 1 D=0.5 0.33 K/W 0.25 Z 0.17 thJC 0.08 Single Pulse 0.1 DSSK 30-018A 0.01 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, Conditions and dimensions. 20071019a © 2007 IXYS All rights reserved 2 - 2
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