DSS 2x160-01A Power Schottky Rectifier I = 2x160 A FAVM V = 100 V RRM Non isolated V = 0.81 V F A2 miniBLOC, SOT-227 B V V Type RSM RRM V V Anode 2 100 100 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings Features I 200 A (cid:127) International standard package FRMS I T = 95°C; rectangular, d = 0.5 160 A miniBLOC FAVM C I T = 95°C; rectangular, d = 0.5; per device 320 A (cid:127) Epoxy meets UL 94V-0 FAVM C (cid:127) Very low V F I T = 45°C; t = 10 ms (50 Hz), sine 1400 A (cid:127) Extremely low switching losses FSM VJ p (cid:127) Low I -values E I = 15 A; L = 100 µH; T = 25°C; non repetitive 11.3 mJ RM AS AS VJ I V =1.5 (cid:127) V typ.; f=10 kHz; repetitive 1.5 A Applications AR A RRM (dv/dt) 5000 V/µs (cid:127) Rectifiers in switch mode power cr supplies (SMPS) T -40...+150 °C (cid:127) Free wheeling diode in low voltage VJ T 150 °C converters VJM T -40...+150 °C stg Advantages P T = 25°C 410 W tot C (cid:127) High reliability circuit operation Md mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in. (cid:127) Low voltage peaks for reduced terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in. protection circuits Weight typical 30 g (cid:127) Low noise switching (cid:127) Low losses Symbol Conditions Characteristic Values typ. max. Dimensions see Outlines.pdf I (cid:99) V = V ; T = 25°C 4 mA R R RRM VJ V = V ; T = 125°C 40 mA R RRM VJ V I = 160 A; T = 125°C 0.81 V F F VJ I = 160 A; T = 25°C 0.98 V F VJ I = 320 A; T = 125°C 1.08 V F VJ R 0.30 K/W thJC R 0.15 K/W thCH Pulse test: (cid:99) Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. 5 1 IXYS reserves the right to change limits, Conditions and dimensions. 5 © 2005 IXYS All rights reserved 1 - 2

DSS 2x160-01A 400 100 10000 A mA pF 100 I 10 TVJ=150°C C I R T F 125°C 1 100°C 1000 TVJ = 10 150°C 0.1 75°C 125°C 25°C 50°C 0.01 25°C T = 25°C VJ 1 0.001 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2V 0 20 40 60 80 V100 0 20 40 60 80 V100 V V V F R R Fig. 1 Max. forward voltage Fig. 2 Typ. reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics vs. reverse voltage V versus reverse voltage V R R 240 180 10000 W A 160 200 140 A I P F(AV) (AV) I 160 120 FSM 100 d = d=0.5 DC 120 DC 1000 80 0.5 0.33 80 60 0.25 0.17 40 0.08 40 20 0 0 100 0 40 80 120 C 160 0 50 100 150 A 200 10 100 1000 µs10000 T I t C F(AV) P Fig. 4 Avg. forward current I Fig. 5 Forward power loss characteristics F(AV) vs. case temperature T C 0.4 K/W Z thJC D=0.5 0.33 0.1 0.25 0.17 0.08 Single Pulse (Thermal Resistance) DSS2x160-01A Note: All curves are per diode 0.01 0.001 0.01 0.1 1s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles 5 1 IXYS reserves the right to change limits, Conditions and dimensions. 5 © 2005 IXYS All rights reserved 2 - 2

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